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PDF STP19N06 Data sheet ( Hoja de datos )
| Número de pieza | STP19N06 | |
| Descripción | N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR | |
| Fabricantes | ST Microelectronics | |
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STP19N06
STP19N06FI
N - CHANNEL ENHANCEMENT MODE
POWER MOS TRANSISTOR
TYPE
STP19N06
STP19N06FI
VDSS
60 V
60 V
R DS( on)
< 0.1 Ω
< 0.1 Ω
ID
19 A
13 A
s TYPICAL RDS(on) = 0.085 Ω
s AVALANCHE RUGGED TECHNOLOGY
s 100% AVALANCHE TESTED
s REPETITIVE AVALANCHE DATA AT 100oC
s LOW GATE CHARGE
s HIGH CURRENT CAPABILITY
s 175oC OPERATING TEMPERATURE
s APPLICATION ORIENTED
CHARACTERIZATION
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s SOLENOID AND RELAY DRIVERS
s REGULATORS
s DC-DC & DC-AC CONVERTERS
s MOTOR CONTROL, AUDIO AMPLIFIERS
s AUTOMOTIVE ENVIRONMENT (INJECTION,
ABS, AIR-BAG, LAMPDRIVERS, Etc.)
3
2
1
TO-220
3
2
1
ISOWATT220
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
P ar amete r
VD S
VDG R
Drain-source Voltage (VGS = 0)
Drain- gate Voltage (RGS = 20 kΩ)
VGS
ID
ID
ID M(•)
Ptot
Gate-source Voltage
Drain Current (continuous) at T c = 25 oC
Drain Current (continuous) at T c = 100 oC
Drain Current (pulsed)
Total Dissipation at Tc = 25 oC
Derating Factor
VISO Insulation Withstand Voltage (DC)
Tstg Storage Temperature
Tj Max. Operating Junction Temperature
(•) Pulse width limited by safe operating area
February 1995
Val ue
STP19N06
ST P1 9N 06 F I
60
60
± 20
19 13
13 9
76 76
80 35
0. 53
0. 23
2000
-65 to 175
175
Unit
V
V
V
A
A
A
W
W/oC
V
oC
oC
1/10
1 page  
Transconductance
STP19N06/FI
Static Drain-source On Resistance
Gate Charge vs Gate-source Voltage
Capacitance Variations
Normalized Gate Threshold Voltage vs
Temperature
Normalized On Resistance vs Temperature
5/10
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet STP19N06.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| STP19N06 | N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR | ST Microelectronics |
| STP19N06FI | N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR | ST Microelectronics |
| STP19N06L | N-CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR | ST Microelectronics |
| STP19N06LFI | N-CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR | ST Microelectronics |
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