|
|
PDF STP19NB20 Data sheet ( Hoja de datos )
| Número de pieza | STP19NB20 | |
| Descripción | N-CHANNEL MOSFET | |
| Fabricantes | ST Microelectronics | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de STP19NB20 (archivo pdf) en la parte inferior de esta página. Total 12 Páginas | ||
|
No Preview Available !
www.DataSheet4U.com
STP19NB20 - STP19NB20FP
STB19NB20-1
N-CHANNEL 200V - 0.15Ω - 19A - TO-220/TO-220FP/I2PAK
PowerMESH™ MOSFET
TYPE
VDSS
RDS(on)
ID
STP19NB20
STP19NB20FP
STB19NB20-1
200 V
200 V
200 V
< 0.18 Ω
< 0.18 Ω
< 0.18 Ω
19 A
10 A
19 A
s TYPICAL RDS(on) = 0.15 Ω
s EXTREMELY HIGH dv/dt CAPABILITY
s 100% AVALANCHE TESTED
s NEW HIGH VOLTAGE BENCHMARK
s GATE CHARGE MINIMIZED
DESCRIPTION
Using the latest high voltage MESH OVERLAY™
process, STMicroelectronics has designed an ad-
vanced family of power MOSFETs with outstanding
performances. The new patent pending strip layout
coupled with the Company’s proprieraty edge termi-
nation structure, gives the lowest RDS(on) per area,
exceptional avalanche and dv/dt capabilities and
unrivalled gate charge and switching characteris-
tics.
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s SWITH MODE POWER SUPPLIES (SMPS)
s DC-AC CONVERTERS FOR TELECOM,
INDUSTRIAL AND CONSUMER
ENVIRONMENT
TO-220
3
2
1
TO-220FP
I2PAK1 2 3
(Tabless TO-220)
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS Drain-source Voltage (VGS = 0)
VDGR
Drain-gate Voltage (RGS = 20 kΩ)
VGS Gate- source Voltage
ID Drain Current (continuous) at TC = 25°C
ID
IDM (l)
Drain Current (continuous) at TC = 100°C
Drain Current (pulsed)
PTOT
Total Dissipation at TC = 25°C
Derating Factor
dv/dt (1) Peak Diode Recovery voltage slope
VISO
Insulation Withstand Voltage (DC)
Tstg Storage Temperature
Tj Max. Operating Junction Temperature
(•)Pulse width limited by safe operating area
August 2002
Value
Unit
STP(B)19NB20(-1) STP19NB20FP
200 V
200 V
± 30 V
19 10 A
12 6.0 A
76 76 A
125 35 W
1
0.28
W/°C
5.5 V/ns
-
2500
V
–65 to 150
°C
150
(1)ISD ≤19 A, di/dt ≤300A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
°C
1/12
1 page  
Gate Charge vs Gate-source Voltage
STP19NB20/FP/STB19NB20-1
Capacitance Variations
Normalized Gate Thereshold Voltage vs Temp. Normalized On Resistance vs Temperature
Source-drain Diode Forward Characteristics
5/12
5 Page 
D2PAK FOOTPRINT
STP19NB20/FP/STB19NB20-1
TUBE SHIPMENT (no suffix)*
TAPE AND REEL SHIPMENT (suffix ”T4”)*
TAPE MECHANICAL DATA
DIM.
A0
B0
D
D1
E
F
K0
P0
P1
P2
R
T
W
mm inch
MIN. MAX. MIN. MAX.
10.5 10.7 0.413 0.421
15.7 15.9 0.618 0.626
1.5 1.6 0.059 0.063
1.59 1.61 0.062 0.063
1.65 1.85 0.065 0.073
11.4 11.6 0.449 0.456
4.8 5.0 0.189 0.197
3.9 4.1 0.153 0.161
11.9 12.1 0.468 0.476
1.9 2.1 0.075 0.082
50 1.574
0.25 0.35 0.0098 0.0137
23.7 24.3 0.933 0.956
* on sales type
REEL MECHANICAL DATA
DIM.
A
B
C
D
G
N
T
mm inch
MIN. MAX. MIN. MAX.
330 12.992
1.5 0.059
12.8 13.2 0.504 0.520
20.2
0795
24.4 26.4 0.960 1.039
100 3.937
30.4
1.197
BASE QTY
1000
BULK QTY
1000
11/12
11 Page | ||
| Páginas | Total 12 Páginas | |
| PDF Descargar | [ Datasheet STP19NB20.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| STP19NB20 | N-CHANNEL MOSFET | ST Microelectronics |
| STP19NB20FP | N-CHANNEL MOSFET | ST Microelectronics |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |