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Número de pieza | BAS101S | |
Descripción | High Voltage Switching Diodes | |
Fabricantes | NXP Semiconductors | |
Logotipo | ||
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BAS101; BAS101S
High-voltage switching diodes
Rev. 01 — 8 September 2006
Product data sheet
1. Product profile
1.1 General description
High-voltage switching diodes, encapsulated in a SOT23 small Surface-Mounted Device
(SMD) plastic package.
Table 1. Product overview
Type number
Package
Philips
BAS101
SOT23
BAS101S
SOT23
JEITA
-
-
Configuration
single
dual series
1.2 Features
I High switching speed: trr ≤ 50 ns
I Low leakage current
I Repetitive peak reverse voltage:
VRRM ≤ 300 V
I Low capacitance: Cd ≤ 2 pF
I Reverse voltage: VR ≤ 300 V
I Small SMD plastic package
1.3 Applications
I High-speed switching
I High-voltage switching
I Voltage clamping
I Reverse polarity protection
1.4 Quick reference data
Table 2. Quick reference data
Symbol Parameter
Per diode
IF forward current
IR reverse current
VR reverse voltage
trr reverse recovery time
Conditions
Min Typ
VR = 250 V
-
-
-
[1] -
-
-
-
-
[1] When switched from IF = 30 mA to IR = 30 mA; RL = 100 Ω; measured at IR = 3 mA.
Max
200
150
300
50
Unit
mA
nA
V
ns
D a t a S h4eUe. ct o m
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Philips Semiconductors
BAS101; BAS101S
High-voltage switching diodes
500
IF
(mA)
400
mhc618
300
200
100 (1) (2) (3)
0
0 0.5 1 VF (V) 1.5
(1) Tamb = 150 °C
(2) Tamb = 75 °C
(3) Tamb = 25 °C
Fig 1. Forward current as a function of forward
voltage; typical values
102
IR
(µA)
10
mhc619
1
10−1
10−2
0 40 80 120 160 200
Tj (°C)
VR = 300 V
Fig 3. Reverse current as a function of junction
temperature; typical values
102
IFSM
(A)
10
mbg703
1
10−1
1
10 102 103 104
tp (µs)
Based on square wave currents.
Tj = 25 °C; prior to surge
Fig 2. Non-repetitive peak forward current as a
function of pulse duration; maximum values
0.42
Cd
(pF)
mhc621
0.38
0.34
0.3
0
10 20 30 40
VR (V)
f = 1 MHz; Tamb = 25 °C
Fig 4. Diode capacitance as a function of reverse
voltage; typical values
BAS101_BAS101S_1
Product data sheet
DataSheet4 U .com
Rev. 01 — 8 September 2006
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
5 of 11
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Philips Semiconductors
16. Contents
1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1 General description. . . . . . . . . . . . . . . . . . . . . . 1
1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.4 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1
2 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2
3 Ordering information . . . . . . . . . . . . . . . . . . . . . 2
4 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
5 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3
6 Thermal characteristics. . . . . . . . . . . . . . . . . . . 3
7 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 4
8 Test information . . . . . . . . . . . . . . . . . . . . . . . . . 6
9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 6
10 Packing information. . . . . . . . . . . . . . . . . . . . . . 6
11 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
12 Mounting. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
13 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . 9
14 Legal information. . . . . . . . . . . . . . . . . . . . . . . 10
14.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 10
14.2 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
14.3 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
14.4 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
15 Contact information. . . . . . . . . . . . . . . . . . . . . 10
16 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
BAS101; BAS101S
High-voltage switching diodes
DataSheet4 U .com
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
For more information, please visit: http://www.semiconductors.philips.com.
For sales office addresses, email to: [email protected].
Date of release: 8 September 2006
Document identifier: BAS101_BAS101S_1
11 Page |
Páginas | Total 11 Páginas | |
PDF Descargar | [ Datasheet BAS101S.PDF ] |
Número de pieza | Descripción | Fabricantes |
BAS101 | High Voltage Switching Diodes | NXP Semiconductors |
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