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부품번호 | PBLS2001S 기능 |
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기능 | 20V PNP BISS Loadswitch | ||
제조업체 | NXP Semiconductors | ||
로고 | |||
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www.DataSheet4U.com
PBLS2001S
20 V PNP BISS loadswitch
Rev. 01 — 3 August 2006
Product data sheet
1. Product profile
1.1 General description
PNP low VCEsat Breakthrough In Small Signal (BISS) transistor and NPN Resistor-
Equipped Transistor (RET) in a SOT96-1 (SO8) small Surface-Mounted Device (SMD)
plastic package.
1.2 Features
I Low VCEsat (BISS) transistor and resistor-equipped transistor in one package
I Low threshold voltage (< 1 V) compared to MOSFET
I Low drive power required
I Space-saving solution
I Reduction of component count
1.3 Applications
I Supply line switches
I Battery charger switches
I High-side switches for LEDs, drivers and backlights
I Portable equipment
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter
Conditions
TR1; PNP low VCEsat (BISS) transistor
VCEO
collector-emitter voltage open base
IC collector current
RCEsat
collector-emitter saturation IC = −2 A;
resistance
IB = −200 mA
TR2; NPN resistor-equipped transistor
VCEO
IO
R1
collector-emitter voltage
output current
bias resistor 1 (input)
open base
R2/R1
bias resistor ratio
[1] Pulse test: tp ≤ 300 µs; δ ≤ 0.02.
Min Typ
-
-
[1] -
-
-
75
--
--
1.54 2.2
0.8 1
Max Unit
−20 V
−3 A
120 mΩ
50 V
100 mA
2.86 kΩ
1.2
DataSheet4 U .com
Philips Semiconductors
PBLS2001S
20 V PNP BISS loadswitch
2.0
Ptot
(W)
1.5
1.0
0.5
(1)
(2)
(3)
006aaa808
0
−75
−25
25
75
(1) Ceramic PCB, Al2O3, standard footprint
(2) FR4 PCB, mounting pad for collector 1 cm2
(3) FR4 PCB, standard footprint
Fig 1. Power derating curves
125 175
Tamb (°C)
6. Thermal characteristics
Table 6. Thermal characteristics
Symbol Parameter
Conditions
Per device
Rth(j-a)
thermal resistance from in free air
junction to ambient
TR1; PNP low VCEsat (BISS) transistor
Rth(j-sp)
thermal resistance from
junction to solder point
Min Typ Max Unit
[1] -
[2] -
[3] -
- 180 K/W
- 125 K/W
- 85 K/W
- - 40 K/W
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2.
[3] Device mounted on a ceramic PCB, Al2O3, standard footprint.
PBLS2001S_1
Product data sheet
Rev. 01 — 3 August 2006
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
4 of 16
4페이지 Philips Semiconductors
PBLS2001S
20 V PNP BISS loadswitch
Table 7. Characteristics …continued
Tamb = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
VBEsat
VBEon
base-emitter
saturation voltage
base-emitter turn-on
voltage
IC = −2 A; IB = −100 mA
IC = −3 A; IB = −300 mA
VCE = −2 V; IC = −1 A
td delay time
tr rise time
IC = −2 A; IBon = −100 mA;
IBoff = 100 mA
ton turn-on time
ts storage time
tf fall time
toff turn-off time
fT transition frequency IC = −100 mA; VCE = −5 V;
f = 100 MHz
Cc collector capacitance VCB = −10 V; IE = ie = 0 A;
f = 1 MHz
TR2; NPN resistor-equipped transistor
ICBO
collector-base cut-off VCB = 50 V; IE = 0 A
current
ICEO
IEBO
collector-emitter
cut-off current
emitter-base cut-off
current
VCE = 30 V; IB = 0 A
VCE = 30 V; IB = 0 A;
Tj = 150 °C
VEB = 5 V; IC = 0 A
hFE
VCEsat
DC current gain
collector-emitter
saturation voltage
VCE = 5 V; IC = 20 mA
IC = 10 mA; IB = 0.5 mA
VI(off)
VI(on)
R1
off-state input voltage VCE = 5 V; IC = 1 mA
on-state input voltage VCE = 0.3 V; IC = 20 mA
bias resistor 1 (input)
R2/R1 bias resistor ratio
Cc collector capacitance VCB = 10 V; IE = ie = 0 A;
f = 1 MHz
Min
[1] -
[1] -
[1] -
-
-
-
-
-
-
100
-
-
-
-
-
30
-
-
2
1.54
0.8
-
[1] Pulse test: tp ≤ 300 µs; δ ≤ 0.02.
Typ
−0.95
−1
−0.8
Max
−1.1
−1.2
−1.2
7-
34 -
41 -
175 -
30 -
205 -
--
- 50
- 100
-1
- 50
-2
--
- 150
1.2 0.5
1.6 -
2.2 2.86
1 1.2
- 2.5
Unit
V
V
V
ns
ns
ns
ns
ns
ns
MHz
pF
nA
µA
µA
mA
mV
V
V
kΩ
pF
PBLS2001S_1
Product data sheet
Rev. 01 — 3 August 2006
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
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