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PDF TC1411 Data sheet ( Hoja de datos )
| Número de pieza | TC1411 | |
| Descripción | HIGH-SPEED MOSFET DRIVERS | |
| Fabricantes | TelCom Semiconductor | |
| Logotipo |  |
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1
TC1411
TC1411N
1A HIGH-SPEED MOSFET DRIVERS
FEATURES
s Latch-Up Protected: Will Withstand 500mA
Reverse Current
s Input Will Withstand Negative Inputs Up to 5V
s ESD Protected .................................................... 4 kV
s High Peak Output Current .................................. 1A
s Wide Operating Range .......................... 4.5V to 16V
s High Capacitive Load
Drive Capability .......................... 1000pF in 25nsec
s Short Delay Time .................................. 30nsec Typ
s Consistent Delay Times With Changes in
Supply Voltage
s Matched Delay Times
s Low Supply Current
— With Logic “1” Input ................................. 500µA
— With Logic “0” Input ................................. 150µA
s Low Output Impedance ....................................... 8Ω
s Pinout Same as TC1410/12/13
GENERAL DESCRIPTION
The TC1411/1411N are 1A CMOS buffer/drivers. They
will not latch up under any conditions within their power and
voltage ratings. They are not subject to damage when up to
5V of noise spiking of either polarity occurs on the ground
pin. They can accept, without damage or logic upset, up to
500 mA of current of either polarity being forced back into
their output. All terminals are fully protected against up to 4
kV of electrostatic discharge.
As MOSFET drivers, the TC1411/1411N can easily
switch 1000 pF gate capacitance in 25nsec with matched
rise and fall times, and provide low enough impedance in
both the ON and the OFF states to ensure the MOSFET’s
intended state will not be affected, even by large transients.
The rise and fall time edges are matched to allow driving
short-duration inputs with greater accuracy.
ORDERING INFORMATION
2
3
4
PIN CONFIGURATIONS
VDD 1
IN 2
NC 3
GND 4
TC1411
8 VDD
7 OUT
6 OUT
5 GND
VDD 1
IN 2
NC 3
TC1411N
8 VDD
7 OUT
6 OUT
GND 4
5 GND
2 6, 7
2 6, 7
INVERTING
NONINVERTING
NC = NO INTERNAL CONNECTION
NOTE: SOIC pinout is identical to DIP.
Part No.
TC1411COA
TC1411CPA
TC1411EOA
TC1411EPA
TC1411NCOA
TC1411NCPA
TC1411NEOA
TC1411NEPA
Package
8-Pin SOIC
8-Pin Plastic DIP
8-Pin SOIC
8-Pin Plastic DIP
8-Pin SOIC
8-Pin Plastic DIP
8-Pin SOIC
8-Pin Plastic DIP
Temp. Range
0°C to +70°C
0°C to +70°C
– 40°C to +85°C
– 40°C to +85°C
0°C to +70°C
0°C to +70°C
– 40°C to +85°C
– 40°C to +85°C
5
6
FUNCTIONAL BLOCK DIAGRAM
TC1411
INVERTING
OUTPUTS
VDD
INPUT
4.7V
GND
EFFECTIVE
INPUT
C = 10pF
TELCOM SEMICONDUCTOR, INC.
300mV
NONINVERTING
OUTPUTS
TC1411N
OUTPUT
7
TC1411/N-10 10/11/96
4-189
8
1 page  
1A HIGH-SPEED MOSFET DRIVERS
TYPICAL CHARACTERISTICS (Cont.)
Rise Time vs. Supply Voltage
CLOAD = 1000pF
100
80
60
TA = 85°C
40 TA = 25°C
20
TA = –40°C
0
4 6 8 10 12 14 16
VDD (VOLTS)
TD1 Propagation Delay vs. Supply Voltage
CLOAD = 1000pF
100
80
60 TA = 85°C
TA = 25°C
40
TA = –40°C
20
0
4 6 8 10 12 14 16
VDD (VOLTS)
Rise and Fall Times vs. Capacitive Load
TA = 25°C, VDD = 16V
100
80 TRISE
60
40 TFALL
20
0
0 500 1000 1500 2000 2500
CLOAD (pF)
TELCOM SEMICONDUCTOR, INC.
3000
3500
1
TC1411
TC1411N
Fall Time vs. Supply Voltage
CLOAD = 1000pF
100
2
80
60
TA = 85°C
40
TA=25°C
20
TA=–40°C
0
4 6 8 10 12 14 16
VDD (VOLTS)
TD2 Propagation Delay vs. Supply Voltage
CLOAD = 1000pF
100
3
4
80
560
TA = 85°C
TA=25°C
40
TA = –40°C
20
0
4 6 8 10 12 14 16
VDD (VOLTS)
Propagation Delays vs. Capacitive Load
TA = 25°C, VDD = 16V
36
34 TD2
32
30 TD1
6
7
28
26
0
500 1000 1500 2000 2500 3000 3500
CLOAD (pF)
8
4-193
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet TC1411.PDF ] | |
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