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What is STD7NM80?

This electronic component, produced by the manufacturer "ST Microelectronics", performs the same function as "N-CHANNEL MOSFET".


STD7NM80 Datasheet PDF - ST Microelectronics

Part Number STD7NM80
Description N-CHANNEL MOSFET
Manufacturers ST Microelectronics 
Logo ST Microelectronics Logo 


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STD7NM80, STD7NM80-1
STF7NM80, STP7NM80
N-channel 800 V, 0.95 , 6.5 A TO-220, TO-220FP, IPAK, DPAK
MDmesh™ Power MOSFET
Features
Type
STD7NM80
STD7NM80-1
STF7NM80
STP7NM80
VDSS
800 V
800 V
800 V
800 V
RDS(on)
< 1.05
< 1.05
< 1.05
< 1.05
ID
6.5 A
6.5 A
6.5 A
6.5 A
100% avalanche tested
Low input capacitance and gate charge
Low gate input resistance
Application
Switching applications
Description
MDmesh™ technology applies the benefits of the
multiple drain process to STMicroelectronics’
well-known PowerMESH™ horizontal layout
structure. The resulting product offers low on-
resistance, high dv/dt capability and excellent
avalanche characteristics.
3
2
TO-220F1P
3
2
1
TO-220
3
2
1
IPAK
3
1
DPAK
Figure 1. Internal schematic diagram
$
'
Table 1. Device summary
Order codes
STD7NM80
STD7NM80-1
STF7NM80
STP7NM80
Marking
D7NM80
D7NM80
F7NM80
P7NM80
3
!-V
Package
DPAK
IPAK
TO-220FP
TO-220
Packaging
Tape and reel
Tube
Tube
Tube
October 2009
Doc ID 12573 Rev 3
1/17
www.st.com
17

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STD7NM80 equivalent
STD7NM80-1, STD7NM80, STF7NM80, STP7NM80
Electrical characteristics
Table 7.
Symbol
Switching times
Parameter
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Test conditions
Min. Typ. Max. Unit
20 ns
VDD = 400 V, ID = 3.25 A,
8
ns
RG=4.7 Ω, VGS=10 V
(see Figure 18)
--
35 ns
10 ns
Table 8.
Symbol
Source drain diode
Parameter
Test conditions
ISD
ISDM
VSD(1)
trr
Qrr
IRRM
trr
Qrr
IRRM
Source-drain current
Source-drain current (pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 6.5 A, VGS=0
ISD = 6.5 A,VDD= 50 V
di/dt=100 A/µs
(see Figure 20)
ISD = 6.5 A,VDD= 50 V
di/dt=100 A/µs,
Tj=150 °C
(see Figure 20)
1. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
Min. Typ. Max. Unit
6.5 A
-
26 A
- 1.3 V
460
-4
17
ns
µC
A
680
-6
17
ns
µC
A
Doc ID 12573 Rev 3
5/17


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Featured Datasheets

Part NumberDescriptionMFRS
STD7NM80The function is N-CHANNEL MOSFET. ST MicroelectronicsST Microelectronics
STD7NM80-1The function is N-CHANNEL MOSFET. ST MicroelectronicsST Microelectronics

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