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PDF FGPF7N60LSD Data sheet ( Hoja de datos )
| Número de pieza | FGPF7N60LSD | |
| Descripción | Low Saturation IGBT CO-PAK | |
| Fabricantes | Fairchild Semiconductor | |
| Logotipo |  |
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www.DataSheet4U.com
January 2006
FGPF7N60LSD
600V, 7A Low Saturation IGBT CO-PAK
Features
• Low saturation voltage : VCE(sat) = 1.4 V @ IC = 7A
• High input impedance
• CO-PAK, IGBT with FRD : trr = 50 ns (typ.)
Applications
Lamp applications (Hallogen Dimmer)
Description
Fairchild's Insulated Gate Bipolar Transistors (IGBTs) provides
very low conduction and switching losses.The device is
designed for Lamp applications where very low On-Voltage
Drop is a required feature.
C
TO-220F
1.Gate 2.Collector 3.Emitter
G
E
Absolute Maximum Ratings
Symbol
Description
VCES
VGES
IC
ICM (1)
IF
I FM
Collector-Emitter Voltage
Gate-Emitter Voltage
Collector Current
Collector Current
Pulsed Collector Current
Diode Continous Forward Current
Diode Maximum Forward Current
@ TC = 25°C
@ TC = 100°C
@ TC = 100°C
PD Maximum Power Dissipation
@ TC = 25°C
Maximum Power Dissipation
@ TC = 100°C
TJ Operating Junction Temperature
Tstg Storage Temperature Range
TL Maximum Lead Temp. for Soldering
Purposes, 1/8” from Case for 5 Seconds
Notes :
(1) Repetitive rating : Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol
Parameter
RθJC (IGBT) Thermal Resistance, Junction-to-Case
RθJC(DIODE)
RθJA
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient (PCB Mount) (2)
Notes :
(2) Mounted on 1” squre PCB (FR4 or G-10 Material)
FGPF7N60LSD
600
± 20
14
7
21
12
60
45
18
-55 to +150
-55 to +150
300
Typ.
--
--
--
Max.
2.8
4.5
62.5
©2006 Fairchild Semiconductor Corporation
FGPF7N60LSD Rev. A
1
Units
V
V
A
A
A
A
A
W
W
°C
°C
°C
Units
°C/W
°C/W
°C/W
www.fairchildsemi.com
1 page  
Typical Performance Characteristics (Continued)
Figure 7. Capacitance Characteristics
1000
800
600
400
200
0
1
Ciss
Common Emitter
VGE = 0V, f = 1MHz
TC = 25oC
Coss
Crss
10
Collector-Emitter Voltage, VCE [V]
Figure 9. Turn-Off Characteristics vs.
Gate Resistance
Figure 8. Turn-On Characteristics vs. Gate
Resistance
td(on)
100 tr
Common Emitter
VCC = 300V, VGE = +/-15V
IC = 7A
TC = 25oC
TC = 125oC
10
100
1000
Gate Resistance, RG [Ω ]
Figure 10. Switching Loss vs. Gate Resistance
1000
tf
td(off)
Common Emitter
100 VCC = 300V, VGE = +/-15V
IC = 7A
TC = 25oC
TC = 125oC
100 1000
Gate Resistance, RG [Ω ]
Figure 11. Turn-On Characteristics vs.
Collector Current
1000
Eoff
Eon
100
Common Emitter
VCC=300V,VGE=+/-15V
IC=7A
TC=25oC
TC=125oC
100 1000
Gate Resistance, RG [Ω]
Figure 12. Turn-Off Characteristics vs.
Collector Current
td(on)
tr
100
Common Emitter
VGE = +/-15V, RG = 470Ω
TC = 25oC
TC = 125oC
4 6 8 10 12 14 16
Collector Current, IC [A]
1000
tf
100
4
td(off)
Common Emitter
VGE = +/-15V, RG = 470Ω
TC = 25oC
TC = 125oC
6 8 10 12 14 16
Collector Current, IC [A]
FGPF7N60LSD Rev. A
5
www.fairchildsemi.com
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet FGPF7N60LSD.PDF ] | |
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