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PDF FGPF7N60RUFD Data sheet ( Hoja de datos )
| Número de pieza | FGPF7N60RUFD | |
| Descripción | RUF IGBT CO-PAK | |
| Fabricantes | Fairchild Semiconductor | |
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www.DataSheet4U.com
May 2006
FGPF7N60RUFD
600V, 7A RUF IGBT CO-PAK
tm
Features
• High speed switching
• Low saturation voltage : VCE(sat) = 1.95 V @ IC = 7A
• High input impedance
• CO-PAK, IGBT with FRD : trr = 50 ns (typ.)
• Short Circuit rated
Applications
Motor controls and general purpose inverters.
Description
Fairchild's Insulated Gate Bipolar Transistors (IGBTs) provides
low conduction and switching losses.The device is designed for
Motor applications where ruggedness is a required feature.
TO-220F
1
1.Gate 2.Collector 3.Emitter
Absolute Maximum Ratings
Symbol
VCES
VGES
IC
ICM (1)
IF
IFM
PD
TJ
Tstg
TL
Description
Collector-Emitter Voltage
Gate-Emitter Voltage
Collector Current
Collector Current
Pulsed Collector Current
@ TC = 25°C
@ TC = 100°C
Diode Continuous Forward Current
Diode Maximum Forward Current
@ TC = 100°C
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
@ TC = 25°C
@ TC = 100°C
Storage Temperature Range
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
Notes :
(1) Repetitive rating : Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol
RθJC(IGBT)
RθJC(DIODE)
RθJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
©2006 Fairchild Semiconductor Corporation
FGPF7N60RUFD Rev. A
1
C
G
E
FGP7N60RUFD
600
± 20
14
7
21
12
60
41
16
-55 to +150
-55 to +150
300
Units
V
V
A
A
A
A
A
W
W
°C
°C
°C
Typ.
--
--
--
Max.
3.0
4.2
62.5
Units
°C/W
°C/W
°C/W
www.fairchildsemi.com
1 page  
Typical Performance Characteristics (Continued)
Figure 7. Capacitance Characteristics
Temperature at Variant Current Level
1000
800
Ciss
Common Emitter
VGE = 0V, f = 1MHz
TC = 25oC
600
Figure 8. Turn-On Characteristics vs. Gate
Resistance
Ton
100 Tr
400 Coss
Crss
200
0
1 10
Collector-Emitter Voltage, VCE [V]
Figure 9. Turn-Off Characteristics vs.
Gate Resistance
1000
Common Emitter
VCC = 300V, VGE = +/-15V
IC = 7A
Tc = 25oC
Tc = 125oC
Toff
Tf
Toff
Tf
100
10
Gate Resistance, RG [Ω ]
100
Figure 11. Turn-On Characteristics vs.
Collector Current
200
150
100
Common Emitter
VGE = +/-15V, RG=30Ω
IC = 7A
Tc = 25oC
Tc = 125oC
Ton
50 Tr
Com m on Em itter
VCC = 300V, VGE = +/-15V
IC = 7A
T c = 25oC
T c = 125oC
10
10
Gate R esistance, R G [Ω ]
100
Figure 10. Switching Loss vs. Gate Resistance
600
500
400
300
C om m on E m itter
VCC = 300V, VGE = +/-15V
IC = 7A
T c = 25oC
T c = 125oC
200
Eon
E o ff
Eon
100
E o ff
10 100
G ate R esistance, R G [Ω ]
Figure 12. Turn-Off Characteristics vs.
Collector Current
1000
800
600
Com m on Em itter
VGE = +/-15V, RG=30Ω
IC = 7A
Tc = 25oC
Tc = 125oC
400
Toff
Tf
Toff
200 Tf
4 6 8 10 12 14
Collector Current, IC [A]
4 6 8 10 12 14
C ollector C urrent, IC [A]
FGPF7N60RUFD Rev. A
5
www.fairchildsemi.com
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet FGPF7N60RUFD.PDF ] | |
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