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PDF 2SJ681 Data sheet ( Hoja de datos )
| Número de pieza | 2SJ681 | |
| Descripción | Relay Driver DC-DC Converter | |
| Fabricantes | Toshiba | |
| Logotipo |  |
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TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U−MOSIII)
2SJ681
2SJ681
Relay Drive, DC−DC Converter and Motor Drive
Applications
z 4-V gate drive
z Low drain−source ON resistance: RDS (ON) = 0.12 Ω (typ.)
z High forward transfer admittance: |Yfs| = 5.0 S (typ.)
z Low leakage current: IDSS = −100 µA (max) (VDS = −60 V)
z Enhancement mode: Vth = −0.8 to −2.0 V
(VDS = −10 V, ID = −1 mA)
Maximum Ratings (Ta = 25°C)
Characteristics
Drain−source voltage
Drain−gate voltage (RGS = 20 kΩ)
Gate−source voltage
Drain current
DC (Note 1)
Pulse(Note 1)
Drain power dissipation
Single pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalenche energy (Note 3)
Channel temperature
Storage temperature range
Symbol
VDSS
VDGR
VGSS
ID
IDP
PD
EAS
IAR
EAR
Tch
Tstg
Rating
−60
−60
±20
−5
−20
20
40.5
−5
2
150
−55~150
Unit
V
V
V
A
A
W
mJ
A
mJ
°C
°C
６．５±０．２
５．２±０．２
Unit: mm
０．６ MAX．
０．９
２．３ ２．３
１．１±０．２
０．６ MAX
１２３
０．８ MAX．
１．1 MAX．
０．６±０．１５
０．６±０．１５
JEDEC
―
JEITA
―
TOSHIBA
2-7J2B
Weight: 0.36 g (typ.)
Thermal Characteristics
Characteristics
Symbol
Max Unit
Thermal resistance, channel to case
Thermal resistance, channel to
ambient
Rth (ch−c)
Rth (ch−a)
6.25
125
°C / W
°C / W
Note 1: Ensure that the channel temperature does not exceed 150℃.
Note 2: VDD = −25 V, Tch = 25°C (initial), L = 2.2 mH,
RG = 25 Ω, IAR = −5 A
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device.
Please handle with caution.
1 2006-06-30
1 page  
www.DataSheet4U.com
2SJ681
rth − tw
10
1
Duty = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.01
10 µ
100 µ
Single Pulse
1 m 10 m
Pulse width tw (s)
PDM
t
T
Duty = t/T
Rth (ch-c) = 6.25°C/W
100 m
1
10
Safe operating area
−100
ID max (pulsed) *
−10
ID max (continuous)
1 ms *
DC operation
Tc = 25°C
100 µs *
−1 *: Single nonrepetitive pulse
Tc = 25°C
Curves must be derated
linearly with increase in
temperature.
−0.1
−0.1
−1
VDSS max
−10
−100
Drain-source voltage VDS (V)
EAS – Tch
50
40
30
20
10
0
25 50 75 100 125 150
Channel temperature (initial) Tch (°C)
0V
−15 V
BVDSS
IAR
VDD
VDS
Test circuit
RG = 25 Ω
VDD = −25 V, L = 2.2 mH
Wave form
ΕAS
=
1
2
⋅L ⋅I2
⋅
⎜⎜⎝⎛
BVDSS
BVDSS − VDD
⎟⎟⎠⎞
5 2006-06-30
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet 2SJ681.PDF ] | |
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