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PDF 2N6550 Data sheet ( Hoja de datos )
| Número de pieza | 2N6550 | |
| Descripción | N-Channel Silicon Junction Field-Effect Transistor | |
| Fabricantes | InterFET Corporation | |
| Logotipo |  |
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01/99
B-27
2N6550
N-Channel Silicon Junction Field-Effect Transistor
¥ Low-Noise, High Gain Amplifier
Absolute maximum ratings at TA =25¡C
Reverse Gate Source & Reverse Gate Drain Voltage
Continuious Forward Gate Current
Continuous Device Power Dissipation
Power Derating
Junction Temperature (Operating & Storage)
– 20 V
50 mA
400 mW
2.3 mW/°C
– 65°C to +200°C
At 25°C free air temperature:
Static Electrical Characteristics
Gate Source Breakdown Voltage
V(BR)GSS
Gate Leakage Current
IGSS
Zero Gate Voltage Drain Current (Pulsed)
Gate Source Cutoff Voltage
IDSS
VGS(OFF)
Dynamic Electrical Characteristics
Transconductance
Common Source Output Conductance
Common Source Input Capacitance
Common Source Reverse Transfer Capacitance
gfs
|Yos |
Ciss
Crss
Equivalent Short Circuit
Input Noise Voltage
e¯N
e¯N Total
Equivalent Open Circuit Input Noise Current ¯iN
2N6550
Min Typ Max
– 20
–3
– 0.1
10 100 250
– 0.3 – 3
Process NJ450L
Unit Test Conditions
V IG = 10 µA, VDS = ØV
nA VGS = – 10V, VDS = ØV
µA VGS = – 10V, VDS = ØV
mA VDS = 10V, VGS = Ø V
V VDS = 10V, ID = 0.1 mA
TA = 85°C
25 150 mS VDS = 10V, ID = 10 mA
150 µS VDS = 10V, ID = 10 mA
30 35 pF VDS = 10V, ID = 10 mA
10 20 pF VDS = 10V, VDS = ØV
1.4 2 nV/√Hz VDS = 5V, ID = 10 mA
6 10 nV/√Hz VDS = 5V, ID = 10 mA
0.4 0.6 µVrms VDS = 5V, ID = 10 mA
0.1 pA/√Hz RS < 100 KΩ
f = 1 kHz
f = 1 kHz
f = 140 kHz
f = 140 kHz
f = 1 kHz
f = 10 Hz
f = 10 kHz
to 20 kHz
f = 1 kHz
TOÐ46 Package
Dimensions in Inches (mm)
Pin Configuration
1 Drain, 2 Source, 3 Gate & Case
www.interfet.com
1000 N. Shiloh Road, Garland, TX 75042
(972) 487-1287 FAX (972) 276-3375
1 page | ||
| Páginas | Total 1 Páginas | |
| PDF Descargar | [ Datasheet 2N6550.PDF ] | |
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