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PDF WSF256K8-xCx Data sheet ( Hoja de datos )
| Número de pieza | WSF256K8-xCx | |
| Descripción | 256Kx8 SRAM/ FLASH MODULE | |
| Fabricantes | White Electronic | |
| Logotipo |  |
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WSF256K8-XCX
256Kx8 SRAM/ FLASH MODULE
FIG. 1
PIN CONFIGURATION
TOP VIEW
A18 1
A16 2
A15 3
A12 4
A7 5
A6 6
A5 7
A4 8
A3 9
A2 10
A1 11
A0 12
I/O0 13
I/O1 14
I/O2 15
VSS 16
32 VCC
31 WE
30 A17
29 A14
28 A13
27 A8
26 A9
25 A11
24 OE
23 A10
22 CS
21 I/O7
20 I/O6
19 I/O5
18 I/O4
17 I/O3
PIN DESCRIPTION
A0-18
I/O0-7
CS
OE
WE
VCC
VSS
Address Inputs
Data Input/Output
Chip Select
Output Enable
Write Enable
+5.0V Power
Ground
A0-16
I/O0-7
WE
OE
BLOCK DIAGRAM
ADVANCED*
FEATURES
s Access Times of 35ns (SRAM) and 70ns (FLASH)
s JEDEC Standard, Hermetic Ceramic Package, 32 pin DIP
(Package 300)
s 256Kx8 SRAM
s 256Kx8 5V FLASH
s Memory Map
Flash Memory: 0H-3FFFFH
SRAM: 40000H-7FFFFH
s Low Power CMOS
s Commercial, Industrial and Military Temperature Ranges
s TTL Compatible Inputs and Outputs
s Built-in Decoupling Caps and Multiple Ground Pins for
Low Noise Operation
FLASH MEMORY FEATURES
s 10,000 Erase/Program Cycles
s Sector Architecture
• 8 equal size sectors of 16KBytes each
• Any combination of sectors can be concurrently erased.
Also supports full chip erase
s Data Retention, 10 Years at 125°C
s 5 Volt Programming; 5V ± 10% Supply
s Embedded Erase and Program Algorithms
s Hardware and Software Write Protection
s Page Program Operation and Internal Program Control Time
* This data sheet describes a product that may or may not be under
development and is subject to change or cancellation without notice.
11
128K x 8
Flash
128K x 8
Flash
128K x 8
SRAM
128K x 8
SRAM
A17
Decoder
A18
CS
January 1996
1 White Microelectronics • Phoenix, AZ • (602) 437-1520
1 page | ||
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