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PDF AT49BV6416C Data sheet ( Hoja de datos )
| Número de pieza | AT49BV6416C | |
| Descripción | Flash Memory | |
| Fabricantes | ATMEL Corporation | |
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Features
• 64-megabit (4M x 16) Flash Memory
• 2.7V - 3.6V Read/Write
• High Performance
– Asynchronous Access Time – 70 ns
– Page Mode Read Time – 20 ns
• Sector Erase Architecture
– Eight 4K Word Sectors with Individual Write Lockout
– One Hundred Twenty-seven 32K Word Main Sectors with Individual Write Lockout
• Typical Sector Erase Time: 32K Word Sectors – 700 ms; 4K Word Sectors – 200 ms
• Four Plane Organization, Permitting Concurrent Read in Any of the Three Planes not
Being Programmed/Erased
– Memory Plane A: 16M Memory Including Eight 4K Word Sectors
– Memory Plane B: 16M Memory Consisting of 32K Word Sectors
– Memory Plane C: 16M Memory Consisting of 32K Word Sectors
– Memory Plane D: 16M Memory Consisting of 32K Word Sectors
• Suspend/Resume Feature for Erase and Program
– Supports Reading and Programming Data from Any Sector by Suspending Erase
of a Different Sector
– Supports Reading Any Word by Suspending Programming of Any Other Word
• Low-power Operation
– 30 mA Active
– 35 µA Standby
• 2.2V I/O Option Reduces Overall System Power
• VPP Pin for Write Protection and Accelerated Program/Erase Operations
• Reset Input for Device Initialization
• CBGA Package
• Top or Bottom Boot Block Configuration Available
• 128-bit Protection Register
• Common Flash Interface (CFI)
64-megabit
(4M x 16)
Page Mode
2.7-volt Flash
Memory
AT49BV6416C
AT49BV6416CT
1. Description
The AT49BV6416C(T) is a 2.7-volt 64-megabit Flash memory. The memory is divided
into multiple sectors and planes for erase operations. The device can be read or
reprogrammed off a single 2.7V power supply, making it ideally suited for In-System
programming. The device can operate in the asynchronous or page read mode.
The AT49BV6416C(T) is divided into four memory planes. A read operation can occur
in any of the three planes which is not being programmed or erased. This concurrent
operation allows improved system performance by not requiring the system to wait for
a program or erase operation to complete before a read is performed. To further
increase the flexibility of the device, it contains an Erase Suspend and Program Sus-
pend feature. This feature will put the erase or program on hold for any amount of time
and let the user read data from or program data to any of the remaining sectors. There
is no reason to suspend the erase or program operation if the data to be read is in
another memory plane.
The VPP pin provides data protection and faster programming times. When the VPP
input is below 0.7V, the program and erase functions are inhibited. When VPP is at
1.65V or above, normal program and erase operations can be performed. With VPP at
10.0V, the program (Dual-word Program command) operation is accelerated.
3465C–FLASH–07/05
1 page  
3465C–FLASH–07/05
AT49BV6416C(T)
Table 3-1.
VPP
VCC
VCC
VCC
VCC
VCC
VCC
VCC
VIL
Hardlock and Softlock Protection Configurations in Conjunction with WP
Hard-
Soft-
WP lock
lock
Erase/
Prog
Allowed?
Comments
00
0
Yes No sector is locked
00
1
Sector is Softlocked. The
No Unlock command can unlock
the sector.
01
1
Hardlock protection mode is
No enabled. The sector cannot be
unlocked.
10
0
Yes No sector is locked.
10
1
Sector is Softlocked. The
No Unlock command can unlock
the sector.
11
0
Hardlock protection mode is
Yes overridden and the sector is
not locked.
11
1
Hardlock protection mode is
No
overridden and the sector can
be unlocked via the Unlock
command.
xx
x
No
Erase and Program Operations
cannot be performed.
Figure 3-1. Sector Locking State Diagram
UNLOCKED
LOCKED
[000]
WP = VIL = 0
A
C
B
[001]
C
Power-Up/Reset
Default
[011]
Hardlocked
[110]
A
WP = VIH = 1
[100]
A
B
C
B
[111]
Hardlocked is disabled by
WP = VIH
C Power-Up/Reset
Default
[101]
A = Unlock Command
B = Softlock Command
C = Hardlock Command
Note: 1. The notation [X, Y, Z] denotes the locking state of a sector. The current locking state of a sector
is defined by the state of WP and the two bits of the sector-lock status D[1:0].
5
5 Page 
3.20 Program Suspend/Resume Flowchart
Start
Write B0
Any Address
(Program Suspend)
Write 70
Any Address
within
the Same Plane
(Read Status)
Read Status
Register
SR7 =
1
0
SR2 =
1
0
Program
Completed
Write FF
Suspend Plane
(Read Array)
Read
Data
Write FF
(Read
Array)
Done
Reading
No
Read
Data
Yes
Write D0
Any Address
(Program Resume)
Program
Resumed
Write 70H
Any Address
within
the Same Plane
(Read Status)
AT49BV6416C(T)
3.21 Program Suspend/Resume Procedure
Bus
Operation Command Comments
Write
Program
Suspend
Data = B0
Addr = Sector address to
Suspend (SA)
Write
Read
Status
Data = 70
Addr = Any address within the
Same Plane
Read
None
Status register data: Toggle CE
or
OE to update status register
Addr = Any address
Check SR7
Idle
None
1 = WSM Ready
0 = WSM Busy
Check SR2
Idle
None
1 = Program suspended
0 = Program completed
Write
Read Array
Data = FF
Addr = Any address within the
Suspended Plane
Read
None
Read data from any sector in the
memory other than the one being
programmed
Write
Program
Resume
Data = D0
Addr = Any address
If the Suspend Plane was placed in Read mode:
Write
Read
Status
Return Plane to Status mode:
Data = 70
Addr = Any address within the
Same Plane
3465C–FLASH–07/05
11
11 Page | ||
| Páginas | Total 30 Páginas | |
| PDF Descargar | [ Datasheet AT49BV6416C.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
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