|
|
PDF MRFG35003M6T1 Data sheet ( Hoja de datos )
| Número de pieza | MRFG35003M6T1 | |
| Descripción | GALLIUM ARSENIDE PHEMT | |
| Fabricantes | Motorola Semiconductors | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de MRFG35003M6T1 (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
|
No Preview Available !
www.DataSheet4U.com
MOTOROLA
Freescale Semiconductor, Inc.
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MRFG35003M6T1/D
The RF GaAs Line
Gallium Arsenide PHEMT
RF Power Field Effect Transistor
Designed for 3.5 GHz WLL/MMDS/BWA or UMTS applications. Character-
ized from 0.5 to 5.0 GHz. Device is unmatched and is characterized for use in
Class AB Customer Premise Equipment (CPE) applications.
• Typical W–CDMA Performance: –42 dBc ACPR, 3.55 GHz, 6 Volts,
IDQ = 180 mA
Output Power — 450 mWatts
Power Gain — 9 dB
Efficiency — 24%
• 3 Watts P1dB @ 3.55 GHz
• Excellent Phase Linearity and Group Delay Characteristics
• High Gain, High Efficiency and High Linearity
• In Tape and Reel. T1 Suffix = 1000 Units per 12 mm, 7 inch Reel.
MRFG35003M6T1
3.5 GHz, 3 W, 6 V
POWER FET
GaAs PHEMT
CASE 466–02, STYLE 1
PLD–1.5
PLASTIC
MAXIMUM RATINGS
Rating
Drain–Source Voltage
Total Device Dissipation @ TC = 25°C
Derate above 25°C
Gate–Source Voltage
RF Input Power
Storage Temperature Range
Channel Temperature(1)
Operating Case Temperature Range
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
MOISTURE SENSITIVITY LEVEL
Test Methodology
Per JESD 22–A113
Symbol
VDSS
PD
VGS
Pin
Tstg
Tch
TC
Symbol
RθJC
(1) For reliable operation, the operating channel temperature should not exceed 150°C.
(2) Simulated.
Value
8
22.7(2)
0.15(2)
–5
24
– 65 to +150
175
– 20 to +85
Max
6.6(2)
Rating
1
Unit
Vdc
Watts
W/°C
Vdc
dBm
°C
°C
°C
Unit
°C/W
REV 1
MMoOtoTroOla,RInOc.L2A00R3 F DEVICE DATA For More Information On This Product,
Go to: www.freescale.com
MRFG35003M6T1
1
1 page  
Freescale Semiconductor, Inc.
TYPICAL CHARACTERISTICS
0
IRL
-10
0
-10
-20
VDS = 6 Vdc, IDQ = 180 mA
f = 3.55 GHz, 8.5 P/A 3GPP W-CDMA
-30 ΓS = 0.898é-132.18_, ΓL = 0.883é-134.70_
-20
-30
-40
ACPR
-50
-40
-50
-60
0.1
Pout, OUTPUT POWER (WATTS)
Figure 3. W–CDMA ACPR and Input Return
Loss versus Output Power
-60
1
12 40
11.5 35
11 30
10.5 GT
10
25
20
9.5 15
PAE
9
8.5
VDS = 6 Vdc, IDQ = 180 mA
f = 3.55 GHz, 8.5 P/A 3GPP W-CDMA
ΓS = 0.898é-132.18_, ΓL = 0.883é-134.70_
10
5
80
0.1 1
Pout, OUTPUT POWER (WATTS)
Figure 4. Transducer Gain and Power Added
Efficiency versus Output Power
NOTE: All data is referenced to package lead interface. ΓS and ΓL are the impedances presented to the DUT.
All data is generated from load pull, not from the test circuit shown.
MOTOROLA RF DEVICE DATA For More Information On This Product,
Go to: www.freescale.com
MRFG35003M6T1
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet MRFG35003M6T1.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| MRFG35003M6T1 | GALLIUM ARSENIDE PHEMT | Motorola Semiconductors |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |