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부품번호 | MRFG35005MT1 기능 |
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기능 | Gallium Arsenide PHEMT RF Power Field Effect Transistor | ||
제조업체 | Freescale Semiconductor | ||
로고 | |||
전체 12 페이지수
www.DataSheet4U.com
Freescale Semiconductor
Technical Data
Gallium Arsenide PHEMT
RF Power Field Effect Transistor
Designed for WLL/MMDS/BWA or UMTS driver applications with frequencies
from 1.8 to 3.6 GHz. Device is unmatched and is suitable for use in Class AB
linear base station applications.
• Typical W - CDMA Performance: - 42 dBc ACPR, 3.55 GHz, 12 Volts,
@IDQ0.=018%0
mA, 5 MHz
Probability)
Offset/3.84
MHz
BW,
64
DPCH
(8.5
dB
P/A
Output Power — 450 mWatt
Power Gain — 11 dB
Efficiency — 25%
• 4.5 Watts P1dB @ 3.55 GHz
• Excellent Phase Linearity and Group Delay Characteristics
• High Gain, High Efficiency and High Linearity
• N Suffix Indicates Lead - Free Terminations
• In Tape and Reel. T1 Suffix = 1000 Units per 12 mm, 7 inch Reel.
Document Number: MRFG35005MT1
Rev. 2, 5/2005
MRFG35005NT1
MRFG35005MT1
3.5 GHz, 4.5 W, 12 V
POWER FET
GaAs PHEMT
CASE 466 - 03, STYLE 1
PLD - 1.5
PLASTIC
Table 1. Maximum Ratings
Rating
Symbol
Value
Drain - Source Voltage
Total Device Dissipation @ TC = 25°C
Derate above 25°C
VDSS
PD
15
10.5 (2)
0.07 (2)
Gate - Source Voltage
RF Input Power
Storage Temperature Range
Channel Temperature (1)
Operating Case Temperature Range
Table 2. Thermal Characteristics
VGS
-5
Pin 30
Tstg - 65 to +150
Tch 175
TC - 20 to +85
Characteristic
Symbol
Value
Thermal Resistance, Junction to Case
Table 3. Moisture Sensitivity Level
Class AB
RθJC
14.2 (2)
Test Methodology
Rating
Package Peak Temperature
Per JESD 22 - A113, IPC/JEDEC J - STD - 020
1
1. For reliable operation, the operating channel temperature should not exceed 150°C.
2. Simulated.
260
Unit
Vdc
W
W/°C
Vdc
dBm
°C
°C
°C
Unit
°C/W
Unit
°C
Freescale Semiconductor, Inc., 2005. All rights reserved.
RF Device Data
Freescale Semiconductor
MRFG35005NT1 MRFG35005MT1
1
C10 C9 C8
C11
C3
C7
C6
C5
R1
C4
C18
C17
C16
C14
C19 C20 C21
C22
C15
C2
C1
C29
C12 C13
C28
C27
C26
C23
C24
C25
MRFG35005M
Rev 1
Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor
signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have
no impact on form, fit or function of the current product.
Figure 2. 3.5 GHz Test Circuit Component Layout
MRFG35005NT1 MRFG35005MT1
4
RF Device Data
Freescale Semiconductor
4페이지 Table 6. Class AB Common Source S - Parameters at VDS = 12 Vdc, IDQ = 85 mA (continued)
f
GHz
2.85
|S11|
0.895
S11
∠φ
138.63
S21
|S21|
1.522
∠φ
11.37
|S12|
0.034
S12
∠φ
- 24.77
2.90
0.893
137.48
1.507
9.90
0.034
- 26.15
2.95
0.893
136.05
1.493
8.24
0.034
- 27.11
3.00
0.894
134.72
1.478
6.55
0.034
- 27.92
3.05
0.892
133.46
1.465
4.95
0.034
- 28.51
3.10
0.890
131.81
1.453
3.30
0.034
- 29.31
3.15
0.892
130.31
1.436
1.60
0.034
- 29.98
3.20
0.891
128.98
1.421
0.04
0.034
- 30.69
3.25
0.888
127.31
1.409
- 1.72
0.034
- 31.47
3.30
0.890
125.83
1.394
- 3.40
0.034
- 32.45
3.35
0.889
124.49
1.380
- 4.89
0.034
- 33.06
3.40
0.887
122.78
1.367
- 6.59
0.034
- 33.59
3.45
0.889
121.40
1.352
- 8.31
0.034
- 34.06
3.50 0.888 119.96 1.338
- 9.91
0.035
- 34.46
3.55 0.887 118.32 1.328 - 11.56 0.035 - 35.34
3.60 0.888 116.96 1.313 - 13.16 0.035 - 36.09
3.65 0.887 115.68 1.299 - 14.69 0.036 - 36.68
3.70 0.887 114.24 1.287 - 16.36 0.036 - 37.71
3.75 0.887 113.05 1.274 - 17.90 0.036 - 38.84
3.80 0.888 111.84 1.262 - 19.43 0.036 - 39.90
3.85 0.888 110.59 1.252 - 20.85 0.036 - 40.73
3.90
0.887
109.45
1.240
- 22.36
0.036
- 41.33
3.95
0.888
108.32
1.230
- 24.01
0.036
- 41.73
4.00
0.887
107.24
1.222
- 25.35
0.036
- 42.00
4.05
0.886
106.10
1.216
- 26.93
0.037
- 42.60
4.10
0.887
105.02
1.205
- 28.43
0.037
- 43.13
4.15
0.886
104.22
1.198
- 29.78
0.037
- 43.70
4.20
0.884
103.08
1.195
- 31.44
0.038
- 44.59
4.25
0.885
102.00
1.189
- 33.00
0.038
- 45.54
4.30
0.885
101.08
1.184
- 34.46
0.038
- 46.22
4.35
0.884
100.08
1.183
- 35.96
0.039
- 46.93
4.40
0.883
98.90
1.176
- 37.67
0.039
- 48.09
4.45
0.882
97.99
1.172
- 39.19
0.039
- 49.06
4.50
0.881
96.91
1.176
- 40.74
0.040
- 49.87
4.55
0.880
95.41
1.172
- 42.48
0.040
- 50.58
4.60
0.879
94.29
1.172
- 44.02
0.040
- 51.24
4.65
0.878
92.80
1.177
- 45.83
0.041
- 52.21
4.70
0.877
91.10
1.175
- 47.87
0.042
- 53.61
4.75
0.876
89.66
1.176
- 49.70
0.042
- 55.11
4.80
0.874
87.90
1.178
- 51.58
0.042
- 56.51
4.85
0.874
86.08
1.177
- 53.56
0.042
- 57.66
4.90
0.870
84.39
1.175
- 55.56
0.042
- 58.60
4.95
0.867
82.48
1.177
- 57.53
0.043
- 59.41
5.00
0.866
80.32
1.179
- 59.75
0.043
- 60.39
|S22|
0.618
0.618
0.616
0.618
0.617
0.616
0.616
0.617
0.615
0.616
0.616
0.615
0.615
0.616
0.615
0.613
0.613
0.612
0.612
0.613
0.613
0.612
0.613
0.612
0.611
0.611
0.609
0.607
0.608
0.608
0.605
0.606
0.607
0.604
0.603
0.601
0.597
0.594
0.594
0.590
0.589
0.588
0.585
0.583
S22
∠φ
152.46
151.97
150.93
150.06
149.53
148.45
147.51
146.90
145.95
145.01
144.44
143.59
142.69
141.92
141.09
140.03
139.19
138.40
137.36
136.45
135.74
134.56
133.64
133.05
131.91
130.81
130.15
128.89
127.57
126.81
125.63
124.16
123.26
122.03
120.40
119.45
118.22
116.51
115.24
113.89
112.15
110.76
109.40
107.71
RF Device Data
Freescale Semiconductor
MRFG35005NT1 MRFG35005MT1
7
7페이지 | |||
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부품번호 | 상세설명 및 기능 | 제조사 |
MRFG35005MT1 | Gallium Arsenide PHEMT RF Power Field Effect Transistor | Freescale Semiconductor |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |