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PDF MRFG35005NT1 Data sheet ( Hoja de datos )
| Número de pieza | MRFG35005NT1 | |
| Descripción | Gallium Arsenide PHEMT RF Power Field Effect Transistor | |
| Fabricantes | Freescale Semiconductor | |
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Freescale Semiconductor
Technical Data
Gallium Arsenide PHEMT
RF Power Field Effect Transistor
Designed for WLL/MMDS/BWA or UMTS driver applications with frequencies
from 1.8 to 3.6 GHz. Device is unmatched and is suitable for use in Class AB
linear base station applications.
• Typical W - CDMA Performance: - 42 dBc ACPR, 3.55 GHz, 12 Volts,
@IDQ0.=018%0
mA, 5 MHz
Probability)
Offset/3.84
MHz
BW,
64
DPCH
(8.5
dB
P/A
Output Power — 450 mWatt
Power Gain — 11 dB
Efficiency — 25%
• 4.5 Watts P1dB @ 3.55 GHz
• Excellent Phase Linearity and Group Delay Characteristics
• High Gain, High Efficiency and High Linearity
• N Suffix Indicates Lead - Free Terminations
• In Tape and Reel. T1 Suffix = 1000 Units per 12 mm, 7 inch Reel.
Document Number: MRFG35005MT1
Rev. 2, 5/2005
MRFG35005NT1
MRFG35005MT1
3.5 GHz, 4.5 W, 12 V
POWER FET
GaAs PHEMT
CASE 466 - 03, STYLE 1
PLD - 1.5
PLASTIC
Table 1. Maximum Ratings
Rating
Symbol
Value
Drain - Source Voltage
Total Device Dissipation @ TC = 25°C
Derate above 25°C
VDSS
PD
15
10.5 (2)
0.07 (2)
Gate - Source Voltage
RF Input Power
Storage Temperature Range
Channel Temperature (1)
Operating Case Temperature Range
Table 2. Thermal Characteristics
VGS
-5
Pin 30
Tstg - 65 to +150
Tch 175
TC - 20 to +85
Characteristic
Symbol
Value
Thermal Resistance, Junction to Case
Table 3. Moisture Sensitivity Level
Class AB
RθJC
14.2 (2)
Test Methodology
Rating
Package Peak Temperature
Per JESD 22 - A113, IPC/JEDEC J - STD - 020
1
1. For reliable operation, the operating channel temperature should not exceed 150°C.
2. Simulated.
260
Unit
Vdc
W
W/°C
Vdc
dBm
°C
°C
°C
Unit
°C/W
Unit
°C
Freescale Semiconductor, Inc., 2005. All rights reserved.
RF Device Data
Freescale Semiconductor
MRFG35005NT1 MRFG35005MT1
1
1 page  
TYPICAL CHARACTERISTICS
−10
IRL
−20
−30 VDS = 12 Vdc, IDQ = 85 mA
f = 3.55 GHz, 8.5 P/A 3GPP W−CDMA
ΓS = 0.868é−115.15_, ΓL = 0.764é−139.11_
−40
ACPR
−50
−10
−20
−30
−40
−50
−60
0.01
0.1
Pout, OUTPUT POWER (WATTS)
Figure 3. W - CDMA ACPR and Input Return
Loss versus Output Power
−60
1
20
17.5
VDS = 12 Vdc, IDQ = 85 mA
f = 3.55 GHz, 8.5 P/A 3GPP W−CDMA
15 ΓS = 0.868é−115.18_, ΓL = 0.764é−139.11_
40
PAE
35
30
12.5 GT 25
10 20
7.5 15
5 10
2.5 5
0
0.01
0.1
0
1
Pout, OUTPUT POWER (WATTS)
Figure 4. Transducer Gain and Power Added
Efficiency versus Output Power
NOTE: All data is referenced to package lead interface. ΓS and ΓL are the impedances presented to the DUT.
All data is generated from load pull, not from the test circuit shown.
RF Device Data
Freescale Semiconductor
MRFG35005NT1 MRFG35005MT1
5
5 Page 
PACKAGE DIMENSIONS
A 0.146
3.71
F
0.095
2.41
3 0.115
2.92
BD
1
2R
L
0.115
2.92
ZONE V
ZONE W
4
N
K
Q
H
ÉÉÉÉÉ1 ÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉ4 ÉÉÉÉÉÉÉÉÉÉ2
3
G
S
ZONE X
VIEW Y - Y
0.35 (0.89) X 45_" 5_
U
C
P
Y
10_DRAFT
YE
NOTES:
1. INTERPRET DIMENSIONS AND TOLERANCES
PER ASME Y14.5M, 1984.
2. CONTROLLING DIMENSION: INCH
3. RESIN BLEED/FLASH ALLOWABLE IN ZONE V, W,
AND X.
STYLE 1:
PIN 1. DRAIN
2. GATE
3. SOURCE
4. SOURCE
CASE 466 - 03
ISSUE C
PLD- 1.5
PLASTIC
0.020
0.51
inches
mm
SOLDER FOOTPRINT
DIM
A
B
C
D
E
F
G
H
J
K
L
N
P
Q
R
S
U
ZONE V
ZONE W
ZONE X
INCHES
MIN MAX
0.255 0.265
0.225 0.235
0.065 0.072
0.130 0.150
0.021 0.026
0.026 0.044
0.050 0.070
0.045 0.063
0.160 0.180
0.273 0.285
0.245 0.255
0.230 0.240
0.000 0.008
0.055 0.063
0.200 0.210
0.006 0.012
0.006 0.012
0.000 0.021
0.000 0.010
0.000 0.010
MILLIMETERS
MIN MAX
6.48 6.73
5.72 5.97
1.65 1.83
3.30 3.81
0.53 0.66
0.66 1.12
1.27 1.78
1.14 1.60
4.06 4.57
6.93 7.24
6.22 6.48
5.84 6.10
0.00 0.20
1.40 1.60
5.08 5.33
0.15 0.31
0.15 0.31
0.00 0.53
0.00 0.25
0.00 0.25
RF Device Data
Freescale Semiconductor
MRFG35005NT1 MRFG35005MT1
11
11 Page | ||
| Páginas | Total 12 Páginas | |
| PDF Descargar | [ Datasheet MRFG35005NT1.PDF ] | |
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