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PDF MRFG35010 Data sheet ( Hoja de datos )

Número de pieza MRFG35010
Descripción Gallium Arsenide PHEMT RF Power Field Effect Transistor
Fabricantes Freescale Semiconductor　
Logotipo Freescale Semiconductor Logotipo



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Freescale Semiconductor
Technical Data
Gallium Arsenide PHEMT
RF Power Field Effect Transistor
Designed for WLL/MMDS or UMTS driver applications with frequencies from
1.8 to 3.6 GHz. Device is unmatched and is suitable for use in Class AB or
Class A linear base station applications.
• Typical W−CDMA Performance: −42 dBc ACPR, 3.55 GHz, 12 Volts,
IDQ = 180 mA, 5 MHz Offset/3.84 MHz BW, 64 DPCH (8.5 dB P/A
@ 0.01% Probability)
Output Power — 1 Watt
Power Gain — 10 dB
Efficiency — 30%
• 10 Watts P1dB @ 3.55 GHz
• Excellent Phase Linearity and Group Delay Characteristics
• High Gain, High Efficiency and High Linearity
MRFG35010
Rev. 6, 12/2004
MRFG35010
3.5 GHz, 10 W, 12 V
POWER FET
GaAs PHEMT
CASE 360D−02, STYLE 1
NI−360HF
Table 1. Maximum Ratings
Rating
Symbol
Drain−Source Voltage
Total Device Dissipation @ TC = 25°C
Derate above 25°C
VDSS
PD
Gate−Source Voltage
RF Input Power
Storage Temperature Range
Channel Temperature(1)
Operating Case Temperature Range
Table 2. Thermal Characteristics
VGS
Pin
Tstg
Tch
TC
Characteristic
Symbol
Thermal Resistance, Junction to Case
Class A
Class AB
RθJC
1. For reliable operation, the operating channel temperature should not exceed 150°C.
Value
15
28.3
0.19
−5
33
−65 to +175
175
−20 to +90
Value
5.3
4.8
Unit
Vdc
W
W/°C
Vdc
dBm
°C
°C
°C
Unit
°C/W
© Freescale Semiconductor, Inc., 2004. All rights reserved.
Freescale Semiconductor
Wireless RF Product Device Data
MRFG35010
5−1

1 page




MRFG35010 pdf
TYPICAL CHARACTERISTICS
13.5
13 VDS = 12 Vdc, IDQ = 180 mA
f = 3.55 GHz, 8.5 dB P/A 3GPP W-CDMA
12.5 ΓS = 0.857é-144.24_, ΓL = 0.798é-164.30_
80
70
60
12
Gps
11.5
50
40
11 30
10.5 ηD
10
20
10
9.5
0.1
1
Pout, OUTPUT POWER (WATTS)
Figure 3. Power Gain and Drain Efficiency
versus Output Power
0
10
00
-10 IRL
-10
-20 -20
-30 -30
-40
ACPR
-40
-50 -50
-60
-70
0.1
VDS = 12 Vdc, IDQ = 180 mA
f = 3.55 GHz, 8.5 dB P/A 3GPP W-CDMA
-60
ΓS = 0.857é-144.24_, ΓL = 0.798é-164.30_
-70
1 10
Pout, OUTPUT POWER (WATTS)
Figure 4. W−CDMA ACPR and Input Return Loss
versus Output Power
36
34
VDS = 12 Vdc, IDQ = 180 mA
f = 3.55 GHz, 8.5 dB P/A 3GPP W-CDMA
32 ΓS = 0.857é-144.24_, ΓL = 0.798é-164.30_
60
45
30
28 30
26 Pout
24 ηD 15
22
20 0
5 10 15 20 25
Pin, INPUT POWER (dBm)
Figure 5. W−CDMA Output Power and Drain
Efficiency versus Input Power
NOTE: All data is referenced to package lead interface. ΓS and ΓL are the impedances presented to the DUT.
All data is generated from load pull, not from the test circuit shown.
Freescale Semiconductor
Wireless RF Product Device Data
MRFG35010
5

5 Page





MRFG35010 arduino
PACKAGE DIMENSIONS
2x
K
B
(FLANGE)
B
2x
D
G
1
2
S
(INSULATOR)
bbb M T A M
BM
3
2x
Q
bbb M T A M B M
bbb M T A M B M
N (LID)
ccc M T A M B M
E
T
SEATING
PLANE
A
A
R (LID)
ccc M T A M B M
H
C
M
(INSULATOR)
aaa M T A M
BM
CASE 360D−02
ISSUE B
NI−360HF
NOTES:
1. CONTROLLING DIMENSION: INCH.
2. INTERPRET DIMENSIONS AND TOLERANCES
PER ASME Y14.5M-1994.
3. DIMENSION H IS MEASURED .030 (0.762) AWAY
FROM PACKAGE BODY.
INCHES
MILLIMETERS
DIM MIN MAX MIN MAX
A .795 .805 20.19 20.45
B .225 .235 5.72 5.97
C .125 .176 3.18 4.47
D .034 .044 0.89 1.12
E .055 .065 1.40 1.65
F .004 .006 0.10 0.15
G .562 BSC
14.28 BSC
H .077 .087 1.96 2.21
K .085 .115 2.16 2.92
M .355 .365 9.02 9.27
F N .355 .365 9.96 10.16
Q .125 .135 3.18 3.43
R .225 .235 5.72 5.97
S .225 .235 5.72 5.97
aaa .005
0.13
bbb .010
0.25
ccc .015
0.38
STYLE 1:
PIN 1. GATE
2. DRAIN
3. SOURCE
Freescale Semiconductor
Wireless RF Product Device Data
MRFG35010
11

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