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IRLU3705Z 데이터시트 PDF




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IRLU3705Z 데이터시트, 핀배열, 회로
www.DataSheet4U.com
PD - 96896
AUTOMOTIVE MOSFET
Features
lLogic Level
lAdvanced Process Technology
lUltra Low On-Resistance
l175°C Operating Temperature
lFast Switching
lRepetitive Avalanche Allowed up to Tjmax
Description
Specifically designed for Automotive applications,
this HEXFET® Power MOSFET utilizes the latest
processing techniques to achieve extremely low
on-resistance per silicon area. Additional features
of this design are a 175°C junction operating
temperature, fast switching speed and improved
repetitive avalanche rating . These features com-
bine to make this design an extremely efficient and
reliable device for use in Automotive applications
and a wide variety of other applications.
G
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited)
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V
™ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Package Limited)
IDM Pulsed Drain Current
PD @TC = 25°C Power Dissipation
Linear Derating Factor
VGS
Gate-to-Source Voltage
dEAS (Thermally limited) Single Pulse Avalanche Energy
EAS (Tested )
hSingle Pulse Avalanche Energy Tested Value
ÙIAR Avalanche Current
gEAR Repetitive Avalanche Energy
TJ Operating Junction and
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting Torque, 6-32 or M3 screw
Thermal Resistance
RθJC
RθJA
RθJA
Parameter
jJunction-to-Case
ijJunction-to-Ambient (PCB mount)
jJ u n c tio n -to -A m b ie n t
HEXFET® is a registered trademark of International Rectifier.
www.irf.com
IRLR3705Z
IRLU3705Z
HEXFET® Power MOSFET
D
VDSS = 55V
RDS(on) = 8.0m
S ID = 42A
D-Pak
IRLR3705Z
I-Pak
IRLU3705Z
Max.
89
63
42
360
130
0.88
± 16
110
190
See Fig.12a, 12b, 15, 16
-55 to + 175
300 (1.6mm from case )
y y10 lbf in (1.1N m)
Units
A
W
W/°C
V
mJ
A
mJ
°C
Typ.
–––
–––
–––
Max.
1.14
40
110
Units
°C/W
1
9/29/04




IRLU3705Z pdf, 반도체, 판매, 대치품
IRLR/U3705Z
5000
4000
3000
VGS = 0V, f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Ciss
2000
1000
0
1
Coss
Crss
10
VDS, Drain-to-Source Voltage (V)
100
Fig 5. Typical Capacitance vs.
Drain-to-Source Voltage
12
ID= 42A
10
8
VDS= 44V
VDS= 28V
VDS= 11V
6
4
2
0
0 20 40 60 80
QG Total Gate Charge (nC)
100
Fig 6. Typical Gate Charge vs.
Gate-to-Source Voltage
1000.0
100.0
TJ = 175°C
10.0
TJ = 25°C
1.0
VGS = 0V
0.1
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
VSD, Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
10000
1000
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100
100µsec
10 1msec
1 Tc = 25°C
Tj = 175°C
Single Pulse
0.1
1
10msec
DC
10
VDS , Drain-toSource Voltage (V)
100
Fig 8. Maximum Safe Operating Area
www.irf.com

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IRLU3705Z 전자부품, 판매, 대치품
IRLR/U3705Z
1000
Duty Cycle = Single Pulse
100
0.01
10 0.05
0.10
1
Allowed avalanche Current vs
avalanche pulsewidth, tav
assuming Tj = 25°C due to
avalanche losses. Note: In no
case should Tj be allowed to
exceed Tjmax
0.1
1.0E-06
1.0E-05
1.0E-04
tav (sec)
1.0E-03
1.0E-02
Fig 15. Typical Avalanche Current vs.Pulsewidth
1.0E-01
120
100
80
60
40
20
0
25
TOP
Single Pulse
BOTTOM 1% Duty Cycle
ID = 42A
50 75 100 125 150
Starting TJ , Junction Temperature (°C)
Notes on Repetitive Avalanche Curves , Figures 15, 16:
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a
temperature far in excess of Tjmax. This is validated for
every part type.
2. Safe operation in Avalanche is allowed as long asTjmax is
not exceeded.
3. Equation below based on circuit and waveforms shown in
Figures 12a, 12b.
4. PD (ave) = Average power dissipation per single
avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for
voltage increase during avalanche).
6. Iav = Allowable avalanche current.
7. T = Allowable rise in junction temperature, not to exceed
Tjmax (assumed as 25°C in Figure 15, 16).
tav = Average time in avalanche.
175 D = Duty cycle in avalanche = tav ·f
ZthJC(D, tav) = Transient thermal resistance, see figure 11)
Fig 16. Maximum Avalanche Energy
vs. Temperature
www.irf.com
PD (ave) = 1/2 ( 1.3·BV·Iav) = DT/ ZthJC
Iav = 2DT/ [1.3·BV·Zth]
EAS (AR) = PD (ave)·tav
7

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