(PDF) STDD15-07P6 Datasheet - LOW CAPACITANCE DETECTION DIODE

Número de pieza	STDD15-07P6
Descripción	LOW CAPACITANCE DETECTION DIODE
Fabricantes	ST Microelectronics
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No Preview Available ! www.DataSheet4U.com ® STDD15-07P6 LOW CAPACITANCE DETECTION DIODE PRELIMINARY DATASHEET MAIN PRODUCT CHARACTERISTICS IF(AV) VRRM Tj (max) 10 mA 15 V 150 °C VF (max) 0.51 V FEATURES AND BENEFITS s Low diode capacitance s Device designed for RF application s Low profile package s 40% space saving versus SOT-323 s Very low parasitic inductor & resistor DESCRIPTION The STDD15-07P6 is a dual diode series for the detection of a RF signal and the compensation of the voltage drift with the temperature. The SOT-666 package makes the device ideal in application where the space saving is critical like mobile phones. The low junction capacitance will reduce the disturbance on the RF signal. SOT-666 SCHEMATIC DIAGRAM 1 2 3 6 5 4 Parallel configuration STDD15-07P6 ABSOLUTE RATINGS (limiting values) Symbol Parameter Value VRRM Repetitive peak reverse voltage 15 IF Continuous forward current 10 IFSM Surge non repetitive forward current Half wave, single phase, 60Hz 2 Tstg Storage temperature range - 65 + 150 Tj Maximum operating junction temperature 150 Unit V mA A °C °C November 2003 - Ed: 1A 1/3 1 page

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PDF STDD15-07P6 Data sheet ( Hoja de datos )