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부품번호 | FGA15N120AND 기능 |
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기능 | IGBT ( Insulated Gate Bipolar Transistor ) | ||
제조업체 | Fairchild Semiconductor | ||
로고 | |||
전체 8 페이지수
www.DataSheet4U.com
FGA15N120AND
IGBT
General Description
Employing NPT technology, Fairchild’s AND series of
IGBTs provides low conduction and switching losses. The
AND series offers solutions for applications such as
induction heating (IH), motor control, general purpose
inverters and uninterruptible power supplies (UPS).
Features
• High speed switching
• Low saturation voltage : VCE(sat) = 2.4 V @ IC = 15A
• High input impedance
• CO-PAK, IGBT with FRD : trr = 210ns (typ.)
Applications
Induction Heating, UPS, AC & DC motor controls and general purpose inverters.
C
GC E
TO-3P
G
E
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol
VCES
VGES
IC
ICM (1)
IF
IFM
PD
TJ
Tstg
TL
Description
Collector-Emitter Voltage
Gate-Emitter Voltage
Collector Current
Collector Current
Pulsed Collector Current
Diode Continuous Forward Current
Diode Maximum Forward Current
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
Storage Temperature Range
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
@ TC = 25°C
@ TC = 100°C
@ TC = 100°C
@ TC = 25°C
@ TC = 100°C
Notes :
(1) Repetitive rating : Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol
RθJC(IGBT)
RθJC(DIODE)
RθJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
FGA15N120AND
1200
± 20
24
15
45
15
45
200
80
-55 to +150
-55 to +150
300
Typ.
--
--
--
Max.
0.63
2.88
40
Units
V
V
A
A
A
A
A
W
W
°C
°C
°C
Units
°C/W
°C/W
°C/W
©2003 Fairchild Semiconductor Corporation
FGA15N120AND Rev. A
2500
2000
1500
Ciss
Common Emitter
V = 0V, f = 1MHz
GE
T = 25℃
C
1000
500
Coss
Crss
0
1 10
Collector-Emitter Voltage, VCE [V]
Fig 7. Capacitance Characteristics
1000
Common Emitter
V = 600V, V = ± 15V
CC GE
I = 15A
C
T = 25℃
C
T = 125℃
C
100
td(off)
tf
10
0
10 20 30 40 50 60 70
Gate Resistance, RG [Ω]
Fig 9. Turn-Off Characteristics vs.
Gate Resistance
Common Emitter
V =±
GE
15V,
R
G
=
20Ω
T = 25℃
C
T = 125℃
C
100
td(on)
tr
5 10 15 20 25
Collector Current, IC [A]
Fig 11. Turn-On Characteristics vs.
Collector Current
©2003 Fairchild Semiconductor Corporation
30
100 td(on)
tr
10
0
Common Emitter
V = 600V, V = ± 15V
CC GE
I = 15A
C
T = 25℃
C
T = 125℃
C
10 20 30 40 50 60 70
Gate Resistance, RG [Ω]
Fig 8. Turn-On Characteristics vs. Gate
Resistance
Common Emitter
V = 600V, V = ± 15V
10
CC
I = 15A
GE
C
T = 25℃
C
T = 125℃
C
1
Eon
Eoff
0 10 20 30 40 50 60 70
Gate Resistance, RG [Ω]
Fig 10. Switching Loss vs. Gate Resistance
1000
Common Emitter
V =±
GE
15V,
R
G
=
20Ω
T = 25℃
C
T = 125℃
C
100
td(off)
tf
5 10 15 20 25 30
Collector Current, IC [A]
Fig 12. Turn-Off Characteristics vs.
Collector Current
FGA15N120AND Rev. A
4페이지 Package Dimension
TO-3P (FS PKG CODE )
ø3.20 ±0.10
15.60 ±0.20
13.60 ±0.20
9.60 ±0.20
4.80 ±0.20
1.50
+0.15
–0.05
2.00 ±0.20
3.00 ±0.20
1.00 ±0.20
5.45TYP
[5.45 ±0.30]
5.45TYP
[5.45 ±0.30]
1.40 ±0.20
0.60
+0.15
–0.05
©2003 Fairchild Semiconductor Corporation
Dimensions in Millimeters
FGA15N120AND Rev. A
7페이지 | |||
구 성 | 총 8 페이지수 | ||
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구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
FGA15N120AN | NPT Igbt | Fairchild Semiconductor |
FGA15N120AND | IGBT ( Insulated Gate Bipolar Transistor ) | Fairchild Semiconductor |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |