|
|
PDF HY62SF16406D Data sheet ( Hoja de datos )
| Número de pieza | HY62SF16406D | |
| Descripción | 256Kx16bit full CMOS SRAM | |
| Fabricantes | Hynix Semiconductor | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de HY62SF16406D (archivo pdf) en la parte inferior de esta página. Total 11 Páginas | ||
|
No Preview Available !
www.DataSheet4U.com
HY62SF16406D Series
256Kx16bit full CMOS SRAM
Document Title
256K x16 bit 1.7 ~ 2.3V Super Low Power FCMOS Slow SRAM
Revision History
Revision No History
00 Initial Draft
01 Changed Logo
02 Changed Isb1 values
03 Changed Package Size (6.1mm -> 6.0mm)
Draft Date Remark
Dec.20.2000 Preliminary
Mar.23.2001 Preliminary
Jun.07.2001 Preliminary
Aug.07.2001 Preliminary
This document is a general product description and is subject to change without notice. Hynix Electronics does not assume any responsibility
for use of circuits described. No patent licenses are implied.
Rev.03 / Aug.01
Hynix Semiconductor
1 page  
HY62SF16406D Series
AC CHARACTERISTICS
TA = -40°C to 85°C, unless otherwise specified
# Symbol
Parameter
READ CYCLE
1 tRC
Read Cycle Time
2 tAA
Address Access Time
3 tACS
Chip Select Access Time
4 tOE
Output Enable to Output Valid
5 tBA
/LB, /UB Access Time
6 tCLZ
Chip Select to Output in Low Z
7 tOLZ
Output Enable to Output in Low Z
8 tBLZ
/LB, /UB Enable to Output in Low Z
9 tCHZ
Chip Deselection to Output in High Z
10 tOHZ Out Disable to Output in High Z
11 tBHZ
/LB, /UB Disable to Output in High Z
12 tOH
Output Hold from Address Change
WRITE CYCLE
13 tWC
Write Cycle Time
14 tCW
Chip Selection to End of Write
15 tAW
Address Valid to End of Write
16 tBW
/LB, /UB Valid to End of Write
17 tAS
Address Set-up Time
18 tWP
Write Pulse Width
19 tWR
Write Recovery Time
20 tWHZ Write to Output in High Z
21 tDW
Data to Write Time Overlap
22 tDH
Data Hold from Write Time
23 tOW
Output Active from End of Write
70ns
85ns
Min. Max. Min. Max.
70 - 85 -
- 70 - 85
- 70 - 85
- 35 - 40
- 70 - 85
10 - 10 -
5-5-
10 - 10 -
0 30 0 30
0 30 0 30
0 30 0 30
10 - 10 -
70 - 85 -
60 - 70 -
60 - 70 -
60 - 70 -
0-0-
50 - 60 -
0-0-
0 20 0 25
30 - 35 -
0-0-
5-5-
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
AC TEST CONDITIONS
TA = -40°C to 85°C, unless otherwise specified
Parameter
Input Pulse Level
Input Rise and Fall Time
Input and Output Timing Reference Level
Output Load tCLZ, tOLZ, tBLZ, tCHZ, tOHZ, tBHZ, tWHZ, tOW
Others
Value
0.4V to 1.6V
5ns
0.9V
CL = 5pF + 1TTL Load
CL = 30pF + 1TTL Load
AC TEST LOADS
VTM=1.8V
DOUT
4091 Ohm
CL(1)
3273 Ohm
Note 1. Including jig and scope capacitance:
Rev.03 / Aug.01
4
5 Page 
HY62SF16406D Series
MARKING INFORMATION
Package
Marking Example
FBGA
HYSF 6 4 0 6D
css t
y wwp
xxxxx
KOR
• HYSF6406D
•c
• ss
•t
•y
• ww
•p
• xxxxx
• KOR
Note
- Capital Letter
- Small Letter
Index
: Part Name
: Power Consumption
-D
-S
: Low Low Power
: Super Low Power
: Speed
- 70
- 85
: 70ns
: 85ns
: Temperature
-I
: Industrial ( -40 ~ 85 °C )
: Year (ex : 0 = year 2000, 1= year 2001)
: Work Week ( ex : 12 = work week 12 )
: Process Code
: Lot No.
: Origin Country
: Fixed Item
: Non-fixed Item
Rev.03 / Aug.01
10
11 Page | ||
| Páginas | Total 11 Páginas | |
| PDF Descargar | [ Datasheet HY62SF16406D.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| HY62SF16406C | 256Kx16bit full CMOS SRAM | Hynix Semiconductor |
| HY62SF16406D | 256Kx16bit full CMOS SRAM | Hynix Semiconductor |
| HY62SF16406E | 256Kx16bit full CMOS SRAM | Hynix Semiconductor |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |