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Número de pieza | HY62UF16804B | |
Descripción | 512Kx16bit full CMOS SRAM | |
Fabricantes | Hynix Semiconductor | |
Logotipo | ||
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Document Title
512K x16 bit 3.0V Super Low Power Full CMOS slow SRAM
Revision History
Revision No History
00 Initial Release
01 DC Para Change
Icc 4mA à 3mA
Icc1(Min) 40mA à 20mA
Icc1(1us) 8mA à 2mA
Isb 0.1mA à 0.3mA
Isb1 25uA à 15uA
Iccdr
12uA à 6uA
HY62UF16804B Series
512Kx16bit full CMOS SRAM
Draft Date Remark
May.29.2001 Preliminary
Mar.20.2002
This document is a general product description and is subject to change without notice. Hynix Semiconductor Inc does not assume any
responsibility for use of circuits described. No patent licenses are implied.
Rev.01 /Mar.2002
Hynix Semiconductor
1 page HY62UF16804B
AC CHARACTERISTICS
Vcc = 2.7V~3.3V, TA = 0°C to 70°C/ -40°C to 85°C unless otherwise specified
# Symbol Parameter
-55 -70
Min. Max. Min. Max.
READ CYCLE
1 tRC
Read Cycle Time
55 - 70 -
2 tAA
Address Access Time
- 55 - 70
3 tACS
Chip Select Access Time
- 55 - 70
4 tOE
Output Enable to Output Valid
- 30 - 35
5 tBA
/LB, /UB Access Time
- 55 - 70
6 tCLZ
Chip Select to Output in Low Z
10 - 10 -
7 tOLZ
Output Enable to Output in Low Z
5-5-
8 tBLZ
/LB, /UB Enable to Output in Low Z
10
-
10
-
9 tCHZ
Chip Deselection to Output in High Z
0
30
0
30
10 tOHZ Out Disable to Output in High Z
0 30 0 30
11 tBHZ /LB, /UB Disable to Output in High Z 0 30 0 30
12 tOH
Output Hold from Address Change
10 - 10 -
WRITE CYCLE
13 tWC
Write Cycle Time
55 - 70 -
14 tCW
Chip Selection to End of Write
50 - 60 -
15 tAW
Address Valid to End of Write
50 - 60 -
16 tBW
/LB, /UB Valid to End of Write
50 - 60 -
17 tAS
Address Set-up Time
0-0-
18 tWP
Write Pulse Width
45 - 50 -
19 tWR
Write Recovery Time
0-0-
20 tWHZ Write to Output in High Z
0 20 0 20
21 tDW
Data to Write Time Overlap
25 - 30 -
22 tDH
Data Hold from Write Time
0-0-
23 tOW
Output Active from End of Write
5-5-
-85
Min Max.
85 -
- 85
- 85
- 40
- 85
10 -
5-
10 -
0 30
0 30
0 30
10 -
85 -
70 -
70 -
70 -
0-
60 -
0-
0 25
35 -
0-
5-
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
AC TEST CONDITIONS
TA = 0°C to 70°C / -40°C to 85°C, unless otherwise specified
PARAMETER
Input Pulse Level
Input Rise and Fall Time
Input and Output Timing Reference Level
Output Load
tCLZ,tOLZ,tBLZ,tCHZ,tOHZ,tBHZ,tWHZ,tOW
Other
Value
0.4V to 2.2V
5ns
1.5V
CL = 5pF + 1TTL Load
CL = 30pF + 1TTL Load
AC TEST LOADS
VTM = 2.8V
D
OUT
1029 Ohm
CL(1)
1728 Ohm
Note
1. Including jig and scope capacitance
Rev.01/Mar. 2002
4
5 Page |
Páginas | Total 10 Páginas | |
PDF Descargar | [ Datasheet HY62UF16804B.PDF ] |
Número de pieza | Descripción | Fabricantes |
HY62UF16804A | 512Kx16bit full CMOS SRAM | Hynix Semiconductor |
HY62UF16804B | 512Kx16bit full CMOS SRAM | Hynix Semiconductor |
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