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PDF FH1 Data sheet ( Hoja de datos )

Número de pieza FH1
Descripción High Dynamic Range FET
Fabricantes WJ Communication　
Logotipo WJ Communication Logotipo



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FH1
High Dynamic Range FET
The Communications Edge TM
Product Information
Product Features
Product Description
Functional Diagram
x 50 – 3000 MHz
x Low Noise Figure
x 18 dB Gain
x +42 dBm OIP3
x +21 dBm P1dB
x Single or Dual Supply Operation
x Lead-free/Green/RoHS-compliant
SOT-89 Package
x MTTF > 100 years
Applications
x Mobile Infrastructure
x CATV / DBS
x W-LAN / ISM
x Defense / Homeland Security
The FH1 is a high dynamic range FET packaged in a low-
cost surface-mount package. The combination of low noise
figure and high output IP3 at the same bias point makes it
ideal for receiver and transmitter applications. The device
combines dependable performance with superb quality to
maintain MTTF values exceeding 100 years at mounting
temperatures of +85 qC. The FH1 is available the
enviornmentally-friendly lead-free/green/RoHS-compliant
SOT-89 package.
The device utilizes a high reliability GaAs MESFET
technology and is targeted for applications where high
linearity is required. It is well suited for various current
and next generation wireless technologies such as GPRS,
GSM, CDMA, and W-CDMA. In addition, the FH1 will
work for other applications within the 50 to 3000 MHz
frequency range such as fixed wireless.
4
12 3
Function
Gate
Drain
Source
Pin No.
1
3
2, 4
Specifications (1)
Typical Performance (6)
DCElectrical Parameter
Saturated Drain Current, Idss (2)
Transconductance, Gm
Pinch-off Voltage, Vp (3)
Units
mA
mS
V
Min
100
-3
Typ
140
120
-1.5
Max
170
RF Parameter
Operational Bandwidth
Test Frequency
Small-signal Gain, Gss
Max Stable Gain, Gmsg
Output IP3 (4)
P1dB
Minimum Noise Figure (5)
Drain Bias
Gate Bias
Units
MHz
MHz
dB
dB
dBm
dBm
dB
V
V
Min Typ Max
50 – 3000
800
17 18
23
+38 +42
+21
0.77
+5
0
Parameter
Frequency
S21
S11
S22
Output IP3 (4)
Output P1dB
Noise Figure
Drain Bias
Gate Voltage
Units
MHz
dB
dB
dB
dBm
dBm
dB
V
Typical
900 1960 2140
19 16.5 16.5
-11 -20 -22
-10 -9
-9
+42 +40 +40
+21.8 +22.1 +22.1
2.7 3.1 3.0
5V @ 140mA
0
6. The device requires appropriate matching to become unconditionally stable. Parameters reflect
performance in an appropriate application circuit.
1.
DC
25
¡aCndwRitFh
parameters
Vds = 5V,
Vargesm=e0aVsu,riendau5n0de¢ r
the following
system.
conditions
unless
otherwise
noted:
2. Idss is measured with Vgs = 0V.
3. Pinch-off voltage is measured with Ids = 0.6 mA.
4. 3OIP measured with two tones at an output power of +5 dBm/tone separated by 10 MHz. The
suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule.
5. The minimum noise figure has £ S = £ L = £ OPT.
Absolute Maximum Rating
Parameter
Operating Case Temperature
Storage Temperature
Drain to Source Voltage
Gate to Source Voltage
Gate Current
RF Input Power (continuous)
Junction Temperature
Rating
-40 to +85 qC
-55 to +150 qC
+7 V
-6 V
4.5 mA
4 dB above Input P1dB
+220 qC
Ordering Information
Part No.
FH1-G
Description
High Dynamic Range FET
(lead-free/green/RoHS-compliant SOT-89 package)
Operation of this device above any of these parameters may cause permanent damage.
Specifications and information are subject to change without notice.
WJ Communications, Inc   Phone 1-800-WJ1-4401   FAX: 408-577-6621   e-mail: [email protected]   Web site: www.wj.com
Page 1 of 7 July 2006

1 page




FH1 pdf
FH1
High Dynamic Range FET
The Communications Edge TM
Product Information
Frequency
Gain
S11
S22
P1dB
OIP3
Noise Figure
Supply Voltage
Supply Current
Reference Design: 790 MHz, 19 dB Gain
GHz 746
790
dB 19.2 19.4
dB -20 -28
dB -22 -23
dBm
+22
dBm
+41
dB 2.3
V +5
mA 140
+5V
ID=C6
C=100 pF
ID=R7
R=560 Ohm
835
19.3
-15
-22
Gain / Return Loss
20 0
DB(|S(2,1)|) (L)
DB(|S(1,1)|) (R)
DB(|S(2,2)|) (R)
19.5 -5
19 -10
18.5 -15
18 -20
17.5 -25
17
0.7
0.75 0.8 0.85
Frequency (GHz)
-30
0.9
ID=C4
C=1e4 pF
ID=C3
C=100 pF
ID=C1
C=100 pF
ID=C5
L=10 nH
ID=R6
R=560 Ohm
ID=R1
L=8.2 nH
NET="FH1"
2
1
ID=L1
L=27 nH
ID=R2
L=2.2 nH
ID=C2
C=100 pF
Notes:
1. Circuit Board Material: .01 354$6$&  & 78#@9BA!050 CEDDGF  H 3) A5I Q215R 5S5S!&  )TVU5&W` © YGW`©   a   © SG' © Y!&U5PaB' © Y!&© W`S!& "5 Y! &5bVcP0 )
2. Components not shown in the schematic are either not used or loaded with a thru. Gain for the circuit can be adjusted slightly with the modification of the feedback resistance.
Reference Design: 790 MHz, 17 dB Gain
Frequency GHz 746 790 835
Gain
dB 17.3 17.4 17.4
S11 dB -19 -19 -16
S22 dB -22 -22 -21
P1dB
dBm
+22
OIP3 dBm +41
Noise Figure dB 2.0 2.1 2.2
Voltage
V
+5
Current
mA
140
Gain / Return Loss
19 0
DB(|S(1,1)|) (R) DB(|S(2,1)|) (L) DB(|S(2,2)|) (R)
18 -5
17 -10
16 -15
15 -20
14
0.7
+5V
0.75 0.8
Frequency (GHz)
ID=C4
C=10000 pF
0.85
-25
0.9
Noise Figure vs. Frequency
4
25 °C
50 °C
90 °C
3
2
1
0
740 760 780 800 820 840
Frequency (MHz)
ID=C1
C=100 pF
ID=R6
R=360 Ohm
ID=R1
L=12 nH
ID=C6 ID=R7
C=100 pF R=360 Ohm
NET="FH1"
2
1
ID=C3
C=100 pF
ID=L1
L=33 nH
ID=C2
C=100 pF
ID=C5
R=10000 Ohm
Notes:
1. Circuit Board Material: .01 354$6$&  & 78#@9BA!050 CEDDGF  H 3) A5I Q215R 5S5S!&  )TVU5&W` © YGW`©   a   © SG' © Y!&U5PaB' © Y!&© W`S!& "5 Y! &5bVcP0 )
2. Components not shown in the schematic are either not used or loaded with a thru. Gain for the circuit can be adjusted slightly with the modification of the feedback resistance.
Specifications and information are subject to change without notice.
WJ Communications, Inc § Phone 1-800-WJ1-4401 § FAX: 408-577-6621 § e-mail: [email protected] § Web site: www.wj.com
Page 5 of 7 July 2006

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