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기능 Cellular-band Variable Gain Amplifier
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VG101 데이터시트, 핀배열, 회로
www.DataSheet4U.com
VG101
Cellular-band Variable Gain Amplifier
The Communications Edge TM
Product Information
Product Features
Product Description
Functional Diagram
750 – 1000 MHz bandwidth
28 dB Attenuation Range
+40 dBm Output IP3
+22 dBm P1dB
Constant IP3 & P1dB over
attenuation range
Single voltage supply
Pb-free 6mm 28-pin QFN package
MTTF > 1000 years
Applications
Xmit & Rcv AGC circuitry for
mobile infrastructure
The VG101 is a cellular-band high dynamic range
variable gain amplifier (VGA) packaged in a low
profile Pb-free / RoHS-compliant surface-mount
leadless package that measures 6 x 6 mm square.
The +22 dBm output compression point and +40
dBm output intercept point of the amplifier are
maintained over the entire attenuation range, making
the VG101 ideal for use in transmitter and receiver
AGC circuits and as a variable gain stage following
an LNA in high dynamic range receiver front ends.
Superior thermal design allows the product to have a
minimum MTTF rating of 1000 years at a mounting
temperature of +85 ºC. All devices are 100% RF &
DC tested and packaged on tape and reel for
automated surface-mount assembly.
Specifications (1)
GND 8
GND 9
GND 10
RF IN 11
GND 12
GND 13
GND 14
7654
Variable
Attenuator
321
28 GND
27 GND
Amp 26 GND
25 RF OUT
24 GND
23 GND
22 GND
15 16 17 18 19 20 21
Function
Gain Control
No Connect
RF Input
Interstage Match
RF Output / DC bias
Ground
Pin No
5
7, 19
11
21
25
All other pins
Backside copper
Parameter
Operational Bandwidth
Test Frequency
Gain at min. attenuation
Input Return Loss
Output Return Loss
Output P1dB
Output IP3
Noise Figure at min. attenuation
Gain Variation Range
Gain Variation Control Voltage, VCTRL
Group Delay
Supply Voltage
Operating Amplifier Current Range
Gain Control Pin Current
Units
MHz
MHz
dB
dB
dB
dBm
dBm
dB
dB
V
ns
V
mA
mA
Min
750
15
+37
25.5
0
120
Typ
900
16
12
10
+22
+40
3
28.7
1
+5
150
Max
1000
Conditions
See note 1
See note 2
VCTRL = 0 V
33.5 See note 3
4.5 See note 1
Frequency = 900 MHz
180 Pin 25
20 VCTRL = 4.5 V. See note 1.
1. Test conditions unless otherwise noted: 25ºC, Vdd = +5 V in a tuned application circuit. Vctrl is the control voltage through a BJT transistor and a 100 Ω dropping resistor as shown in the same application circuit.
2. 3OIP measured with two tones at an output power of +5 dBm/tone separated by 10 MHz. The suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule.
3. The gain variation range is measured as the difference in gain with Vctrl = 0V and Vctrl = 4.5V at 0.9 GHz.
Absolute Maximum Rating
Parameter
Operating Case Temperature
Storage Temperature
Amplifier Supply Voltage (pin 25)
Pin 5 (Gain Control) Current
RF Input Power (continuous)
Junction Temperature
Rating
-40 to +85 °C
-55 to +125 °C
+6 V
30 mA
+12 dBm
+220 °C
Ordering Information
Part No.
VG101*
VG101-F
VG101-PCB
Description
Cellular-band Variable Gain Amplifier
(tin-lead 6mm QFN package)
Cellular-band Variable Gain Amplifier
(lead-free/RoHS-compliant QFN package)
Fully Assembled Application Board
Operation of this device above any of these parameters may cause permanent damage.
* This package is being phased out in favor of the lead-free/RoHS-compliant package type which is
backwards compatible for existing designs. Refer to WJPCN06MAY05TC1 on the WJ website.
Specifications and information are subject to change without notice
WJ Communications, Inc Phone 1-800-WJ1-4401 FAX: 408-577-6621 e-mail: [email protected] Web site: www.wj.com
Page 1 of 5 June 2005




VG101 pdf, 반도체, 판매, 대치품
VG101
Cellular-band Variable Gain Amplifier
The Communications Edge TM
Product Information
VG101 Mechanical Information
This package may contain lead-bearing materials. The plating material on the pins is SnPb.
Outline Drawing
Product Marking
The component will be lasermarked with a
“VG101” designator with an alphanumeric lot
code on the top surface of the package.
Tape and reel specifications for this part will be
located on the website in the “Application
Notes” section.
ESD / MSL Information
Mounting Configuration / Land Pattern
ESD Rating: Class 1B
Value:
Passes 500V to <1000V
Test:
Human Body Model (HBM)
Standard: JEDEC Standard JESD22-A114
ESD Rating: Class IV
Value:
Passes 1000V to <2000V
Test:
Charged Device Model (CDM)
Standard: JEDEC Standard JESD22-C101
MSL:
Level 1 at +250 °C convection reflow
Standard: JEDEC Standard J-STD-020
Functional Pin Layout
GND 8
GND 9
GND 10
RF IN 11
GND 12
GND 13
GND 14
7654
Variable
Attenuator
321
Amp
28 GND
27 GND
26 GND
25 RF OUT
24 GND
23 GND
22 GND
15 16 17 18 19 20 21
Thermal Specifications
Parameter
Operating Case Temperature
Thermal Resistance, Rth (1)
Junction Temperature, Tjc (2)
Rating
-40 to +85° C
59° C / W
129° C
1000
100
1. The thermal resistance is referenced from the hottest
part of the junction to the ground tab (pin 4).
2. This corresponds to the typical biasing condition of
+5V, 150 mA at an 85° C case temperature. A
minimum MTTF of 1 million hours is achieved for
junction temperatures below 160° C.
10
1
60
MTTF vs. GND Tab Temperature
70 80 90 100
Tab Temperature (°C)
110
Pin FUNCTION Pin FUNCTION
1
GND
15
GND
2
GND
16
GND
3
GND
17
GND
4
GND
18
GND
5 Gain control pin 19
N/C
6
GND
20
GND
7 N/C 21 Interstage Match
8
GND
22
GND
9
GND
23
GND
10 GND 24 GND
11 RF Input 25 RF Output / Bias
12 GND 26 GND
13 GND 27 GND
14 GND 28 GND
Specifications and information are subject to change without notice
WJ Communications, Inc Phone 1-800-WJ1-4401 FAX: 408-577-6621 e-mail: [email protected] Web site: www.wj.com
Page 4 of 5 June 2005

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