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부품번호 | FDY100PZ 기능 |
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기능 | Single P-Channel Specified PowerTrench MOSFET | ||
제조업체 | Fairchild Semiconductor | ||
로고 | |||
전체 6 페이지수
www.DataSheet4U.com
January 2006
FDY100PZ
Single P-Channel (– 2.5V) Specified PowerTrench® MOSFET
General Description
This Single P-Channel MOSFET has been designed
using Fairchild Semiconductor’s advanced Power
Trench process to optimize the RDS(ON) @ VGS = – 2.5v.
Applications
• Li-Ion Battery Pack
Features
• – 350 mA, – 20 V RDS(ON) = 1.2 Ω @ VGS = – 4.5 V
RDS(ON) = 1.6 Ω @ VGS = – 2.5 V
• ESD protection diode (note 3)
• RoHS Compliant
1S
G
D
G1
S2
3D
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
Parameter
VDSS
VGSS
ID
PD
TJ, TSTG
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
(Note 1a) 1a)
Power Dissipation (Steady State)
(Note 1a) 1a)
(Note 1b) 1b)
Operating and Storage Junction Temperature
Range
Thermal Characteristics
RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) 1a)
RθJA Thermal Resistance, Junction-to-Ambient (Note 1b) 1b)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
A
FDY100PZ
7’’
Ratings
– 20
±8
– 350
– 1000
625
446
–55 to +150
200
280
Tape width
8mm
Unit
s
V
V
mA
mW
°C
°C/W
Quantity
3000 units
©2006 Fairchild Semiconductor Corporation
FDY100PZ Rev A
www.fairchildsemi.com
Typical Characteristics
10
ID = -0.35A
8
6
4
VDS = -5V
-15V
-10V
2
0
0 0.5 1 1.5 2 2.5
Qg, GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics.
10
1
RDS(ON) LIMIT
0.1 VGS = -4.5V
SINGLE PULSE
RθJA = 280oC/W
TA = 25oC
100µs
10ms1ms
100ms
1s
10s
DC
0.01
0.01 0.1 1 10
-VDS, DRAIN-SOURCE VOLTAGE (V)
100
Figure 9. Maximum Safe Operating Area.
150
f = 1 MHz
125 VGS = 0 V
100
Ciss
75
Coss
50
25
0
0
Crss
2 4 6 8 10
-VDS, DRAIN TO SOURCE VOLTAGE (V)
12
Figure 8. Capacitance Characteristics.
10
SINGLE PULSE
8
RθJA = 280°C/W
TA = 25°C
6
4
2
0
0.0001
0.001
0.01
0.1
t1, TIME (sec)
1
10
Figure 10. Single Pulse Maximum
Power Dissipation.
100
1
D = 0.5
0.2
0.1 0.1
0.05
0.02
0.01
0.01
0.0001
SINGLE PULSE
0.001
0.01
0.1
t1, TIME (sec)
1
RθJA(t) = r(t) * RθJA
RθJA =280 °C/W
P(pk)
t1
t2
TJ - TA = P * RθJA(t)
Duty Cycle, D = t1 / t2
10 100 1000
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
FDY100PZ Rev A
www.fairchildsemi.com
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FDY100PZ | Single P-Channel Specified PowerTrench MOSFET | Fairchild Semiconductor |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |