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PDF MGFK44A4045 Data sheet ( Hoja de datos )
| Número de pieza | MGFK44A4045 | |
| Descripción | BAND 25W INTERNALLY MATCHED GaAs FET | |
| Fabricantes | Mitsubishi Electric | |
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MITSUBISHI SEMICONDUCTOR <GaAs FET>
MGFK44A4045
14.0-14.5GHz BAND 25W INTERNALLY MATCHED GaAs FET
DESCRIPTION
The MGFK44A4045 is an internally impedance matched
GaAs power FET especially designed for use in 14.0-14.5
GHz band amplifiers. The hermetically sealed metal-ceramic
package guarantees high reliability.
FEATURES
・Internally impedance matched
・High output power
P1dB = 44.0dBm(TYP.) @f=14.0-14.5GHz
・High linear power gain
GLP = 6.0dB(TYP) @f=14.0-14.5GHz
OUTLINE DRAWING
Unit : millimeters
R 1.2
24 +/- 0.3
(1)
0.6 +/- 0.15
(2)
APPLICATION
・For use in 14.0-14.5GHz band amplifiers
QUALITY GRADE
・IG
(3)
20.4 +/- 0.2
16.7
RECOMMENDED BIAS CONDITIONS
VDS = 10 (V)
ID(Rfoff) =6.0 (A)
Rg=25 (ohm)
GF-38
(1) GATE
(2) SOURCE (FLANGE)
(3) DRAIN
ABSOLUTE MAXIMUM RATINGS
(Ta=25deg.C)
Symbol
Parameter
VGDO Gate to drain voltage
VGSO Gate to source voltage
ID Drain current
IGR Reverse gate current
IGF Forward gate current
PT *1 Total power dissipation
Tch Channel temperature
Tstg Storage temperature
*1 : Tc=25deg.C
Ratings
-15
-10
20
-72
144
100
175
-65 / +175
Unit
V
V
A
mA
mA
W
deg.C
deg.C
ELECTRICAL CHARACTERISTICS
(Ta=25deg.C)
< Keep safety first in your circuit designs! >
Mitsubishi Electric Corporation puts the maximum effort into
making semiconductor products better and more reliable,
but there is always the possibility that trouble may occur
with them.Trouble with semiconductors may lead to personal
injury, fire or property damage. Remember to give due
consideration to safety when making your circuit designs,
with appropriate measures such as (1)placement of
substitutive, auxiliary circuits, (2)use of non-flammable
material or (3)prevention against any malfunction or mishap.
Symbol
Parameter
IDSS Saturated drain current
gm Transconductance
VGS(off) Gate to source cut-off voltage
P1dB
Output power at 1dB gain
compression
GLP
Linear power gain
P.A.E.
Power added efficiency
Rth (Ch-C)
Thermal resistance
Test conditions
VDS=3V,VG=0V
VDS=0V,ID=6.0A
VDS=3V,ID=80mA
Min.
--
--
-1.0
43
VDS=10V, ID(RF off)=6.0A, f=14.0 - 14.5GHz
Channel to Case
5.0
--
--
Limits
Typ. Max.
16.0 --
6 --
-1.5 -4.0
44 --
Unit
A
S
V
dBm
6.0 -- dB
17 -- %
1.2 1.5 deg.C/W
MITSUBISHI
ELECTRIC
Jul-04
(1/4)
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet MGFK44A4045.PDF ] | |
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