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PDF 74AUP1G17 Data sheet ( Hoja de datos )
| Número de pieza | 74AUP1G17 | |
| Descripción | Low-power Schmitt-trigger buffer | |
| Fabricantes | NXP Semiconductors | |
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74AUP1G17
Low-power Schmitt-trigger buffer
Rev. 01 — 26 July 2005
Product data sheet
1. General description
The 74AUP1G17 is a high-performance, low-power, low-voltage, Si-gate CMOS device,
superior to most advanced CMOS compatible TTL families.
Schmitt-trigger action at all inputs makes the circuit tolerant to slower input rise and fall
times across the entire VCC range from 0.8 V to 3.6 V.
This device ensures a very low static and dynamic power consumption across the entire
VCC range from 0.8 V to 3.6 V.
This device is fully specified for partial Power-down applications using IOFF.
The IOFF circuitry disables the output, preventing the damaging backflow current through
the device when it is powered down.
The 74AUP1G17 provides the single Schmitt-trigger buffer. It is capable of transforming
slowly changing input signals into sharply defined, jitter-free output signals.
2. Features
s Wide supply voltage range from 0.8 V to 3.6 V
s High noise immunity
s Complies with JEDEC standards:
x JESD8-12 (0.8 V to 1.3 V)
x JESD8-11 (0.9 V to 1.65 V)
x JESD8-7 (1.2 V to 1.95 V)
x JESD8-5 (1.8 V to 2.7 V)
x JESD8-B (2.7 V to 3.6 V)
s ESD protection:
x HBM JESD22-A114-C exceeds 2000 V
x MM JESD22-A115-A exceeds 200 V
x CDM JESD22-C101-C exceeds 1000 V
s Low static power consumption; ICC = 0.9 µA (maximum)
s Latch-up performance exceeds 100 mA per JESD 78 Class II
s Inputs accept voltages up to 3.6 V
s Low noise overshoot and undershoot < 10 % of VCC
s IOFF circuitry provides partial Power-down mode operation
s Multiple package options
s Specified from −40 °C to +85 °C and −40 °C to +125 °C
1 page  
Philips Semiconductors
74AUP1G17
Low-power Schmitt-trigger buffer
11. Static characteristics
Table 8: Static characteristics
At recommended operating conditions; voltages are referenced to GND (ground = 0 V).
Symbol Parameter
Conditions
Min Typ
Tamb = 25 °C
VOH HIGH-state output voltage VI = VIH or VIL
IO = −20 µA; VCC = 0.8 V to 3.6 V
IO = −1.1 mA; VCC = 1.1 V
IO = −1.7 mA; VCC = 1.4 V
IO = −1.9 mA; VCC = 1.65 V
IO = −2.3 mA; VCC = 2.3 V
IO = −3.1 mA; VCC = 2.3 V
IO = −2.7 mA; VCC = 3.0 V
IO = −4.0 mA; VCC = 3.0 V
VCC − 0.1 -
0.75 × VCC -
1.11 -
1.32 -
2.05 -
1.9 -
2.72 -
2.6 -
VOL LOW-state output voltage VI = VIH or VIL
IO = 20 µA; VCC = 0.8 V to 3.6 V
-
-
IO = 1.1 mA; VCC = 1.1 V
IO = 1.7 mA; VCC = 1.4 V
--
--
IO = 1.9 mA; VCC = 1.65 V
IO = 2.3 mA; VCC = 2.3 V
--
--
IO = 3.1 mA; VCC = 2.3 V
--
IO = 2.7 mA; VCC = 3.0 V
--
IO = 4.0 mA; VCC = 3.0 V
--
ILI input leakage current
VI = GND to 3.6 V; VCC = 0 V to 3.6 V
-
-
IOFF
∆IOFF
power-off leakage current VI or VO = 0 V to 3.6 V; VCC = 0 V
additional power-off leakage VI or VO = 0 V to 3.6 V;
current
VCC = 0 V to 0.2 V
-
-
-
-
ICC
∆ICC
quiescent supply current
additional quiescent supply
current
VI = GND or VCC; IO = 0 A;
VCC = 0.8 V to 3.6 V
VI = VCC − 0.6 V; IO = 0 A;
VCC = 3.3 V
--
--
Ci input capacitance
VI = GND or VCC; VCC = 0 V to 3.6 V
-
0.8
Co output capacitance
VO = GND; VCC = 0 V
- 1.7
Max Unit
-V
-V
-V
-V
-V
-V
-V
-V
0.1
0.3 × VCC
0.31
0.31
0.31
0.44
0.31
0.44
±0.1
±0.2
±0.2
V
V
V
V
V
V
V
V
µA
µA
µA
0.5 µA
40 µA
- pF
- pF
9397 750 14677
Product data sheet
Rev. 01 — 26 July 2005
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
5 of 20
5 Page 
Philips Semiconductors
74AUP1G17
Low-power Schmitt-trigger buffer
VCC
VEXT
PULSE
GENERATOR
VI
DUT
VO
5 kΩ
RT CL RL
001aac521
Fig 7.
Test data is given in Table 12.
Definitions for test circuit:
RL = Load resistor
CL = Load capacitance including jig and probe capacitance
RT = Termination resistance should be equal to the output impedance Zo of the pulse generator
Load circuitry for switching times
Table 12: Test data
Supply voltage
VCC
0.8 V to 3.6 V
Load
CL
5 pF, 10 pF,
15 pF and 30 pF
VEXT
RL [1]
tPLH, tPHL
5 kΩ or 1 MΩ open
tPZH, tPHZ
GND
tPZL, tPLZ
2 × VCC
[1] For measuring enable and disable times RL = 5 kΩ, for measuring propagation delays, setup and hold times
and pulse width RL = 1 MΩ.
14. Transfer characteristics
Table 13: Transfer characteristics
Voltages are referenced to GND (ground = 0 V).
Symbol Parameter
Conditions
Tamb = 25 °C
V(th)LH
positive-going see Figure 8 and Figure 9
threshold voltage VCC = 0.8 V
VCC = 1.1 V
VCC = 1.4 V
VCC = 1.65 V
VCC = 2.3 V
VCC = 3.0 V
V(th)HL
negative-going see Figure 8 and Figure 9
threshold voltage VCC = 0.8 V
VCC = 1.1 V
VCC = 1.4 V
VCC = 1.65 V
VCC = 2.3 V
VCC = 3.0 V
Min Typ Max Unit
0.30 -
0.53 -
0.74 -
0.91 -
1.37 -
1.88 -
0.10 -
0.26 -
0.39 -
0.47 -
0.69 -
0.88 -
0.60 V
0.90 V
1.11 V
1.29 V
1.77 V
2.29 V
0.60 V
0.65 V
0.75 V
0.84 V
1.04 V
1.24 V
9397 750 14677
Product data sheet
Rev. 01 — 26 July 2005
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
11 of 20
11 Page | ||
| Páginas | Total 20 Páginas | |
| PDF Descargar | [ Datasheet 74AUP1G17.PDF ] | |
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