(PDF) HAT2172H Datasheet - Silicon N Channel Power MOS FET Power Switching

Número de pieza	HAT2172H
Descripción	Silicon N Channel Power MOS FET Power Switching
Fabricantes	Renesas Technology
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No Preview Available ! www.DataSheet4U.com HAT2172H Silicon N Channel Power MOS FET Power Switching Features • High speed switching • Capable of 7 V gate drive • Low drive current • High density mounting • Low on-resistance RDS(on) = 5.8 mΩ typ. (at VGS = 10 V) Outline LFPAK 5 D 4 G SSS 12 3 5 1 234 1, 2, 3 Source 4 Gate 5 Drain REJ03G0132-0400Z Rev.4.00 Oct.29.2003 Rev.4.00, Oct.29.2003, page 1 of 9 1 page HAT2172H Drain to Source Saturation Voltage vs. Gate to Source Voltage 200 Pulse Test 150 ID = 20 A 100 10 A 50 5A 0 4 8 12 16 20 Gate to Source Voltage VGS (V) Static Drain to Source on State Resistance vs. Drain Current 100 50 20 10 VGS = 7 V 5 10 V 2 Pulse Test 1 1 0.3 10 3 100 30 1000 Drain Current ID (A) Static Drain to Source on State Resistance vs. Temperature 20 Pulse Test 15 10 VGS = 7 V ID = 20 A 5 A, 10 A 5 5 A, 10 A, 20 A 10 V 0 –25 0 25 50 75 100 125 150 Case Temperature Tc (°C) Forward Transfer Admittance vs. Drain Current 100 30 Tc = –25°C 75°C 10 25°C 3 1 0.3 0.1 0.1 VDS = 10 V Pulse Test 0.3 1 3 10 30 100 Drain Current ID (A) Rev.4.00, Oct.29.2003, page 5 of 9 5 Page

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PDF HAT2172H Data sheet ( Hoja de datos )