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PDF M6MGD13TW34DWG Data sheet ( Hoja de datos )
| Número de pieza | M6MGD13TW34DWG | |
| Descripción | CMOS FLASH MEMORY | |
| Fabricantes | Renesas Technology | |
| Logotipo |  |
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RENESAS LSIs
M6MGD13TW34DWG
134,217,728-BIT (8,388,608-WORD BY 16-BIT) CMOS FLASH MEMORY &
33,554,432-BIT (2,097,152-WORD BY 16-BIT) CMOS MOBILE RAM
Stacked-CSP ( Chip Scale Package)
Description
The M6MGD13TW34DWG is a Stacked Chip Scale Package The M6MGD13TW34DWG is suitable for a high performance
(S-CSP) that contents 128M-bit Flash memory and 32M-bit cellular phone and a mobile PC that are required to be small
Mobile RAM in a 72-pin Stacked CSP for lead free use.
mounting area, weight and small power dissipation.
128M-bit Flash memory is a 8,388,608 words, single power
supply and high performance non-volatile memory fabricated
by CMOS technology for the peripheral circuit and DINOR IV
(Divided bit-line NOR IV) architecture for the memory cell. All
memory blocks are locked and can not be programmed or
erased, when F-WP# is Low. Using Software Lock Release
function, program or erase operation can be executed.
32M-bit Mobile RAM is a 2,097,152 words high density RAM
fabricated by CMOS technology for the peripheral circuit and
DRAM cell for the memory array. The interface is compatible
to an asynchronous SRAM.
Features
Access Time Flash
Mobile RAM
Supply Voltage
Ambient Temperature
Package
The cells are automatically refreshed and the refresh control
is not required for system. The device also has the partial
block refresh scheme and the power down mode by writing
the command.
Application
Mobile communication products
70ns (Max.)
80ns (Max.)
FM-VCC=2.7 ~ 3.0V
Ta= -40 ~ 85 degree
72pin S-CSP,
Ball pitch 0.80mm
Outer-ball:Sn-Ag-Cu
PIN CONFIGURATION (TOP VIEW)
INDEX(Laser Marking)
1234 5678
ADU DU
BDU DU
CNC A18
M-
LB#
F-
WP#
GND
F-
WE#
A16 A20
DA5
A17
M-
UB#
NC
F-
RP#
F-
RY/BY#
A8
A11
EA4
A7
M-
OE#
A19 DU
F-
A21
A10 A15
FA0 A6 DU DQ11 DU NC A9 A14
GF-
CE1#
A3
DQ9 DU DQ12 DQ13 DQ15 A13
GND A2
F-
OE#
A1
HDQ8 DQ10 NC
DQ6
M-
WE#
A12
JDQ0 DQ2 NC DQ4 DQ14 GND
KF-
CE2#
M-
CE#
DQ1 DQ3
FM-
VCC
DQ5
DQ7 DU
LDU DU
DU
(Top View)
DU M
FM-VCC : VCC for Flash / Mobile RAM
GND
: GND for Flash / Mobile RAM
A0-A20 : Common address for Flash/Mobile RAM
F-A21
: Address for Flash
DQ0-DQ15 : Data I/O
F-CE1# : Flash chip enable 1
F-CE2# : Flash chip enable 2
F-OE#
: Output enable for Flash Memory
F-WE# : Write enable for Flash Memory
8.5 mm
F-RP# : Reset power down for Flash
F-WP# : Write protect for Flash
F-RY/BY# : Flash Memory Ready /Busy
M-CE# : Mobile RAM chip enable
M-OE# : Output enable for Mobile RAM
M-WE# : Write enable for Mobile RAM
M-LB# : Lower byte control for Mobile RAM
M-UB#
NC
: Upper byte control for Mobile RAM
: Non Connection
DU : Don’t Use
1 Rev.1.0.48a_bezc
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| PDF Descargar | [ Datasheet M6MGD13TW34DWG.PDF ] | |
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