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부품번호 | STP11NK50ZFP 기능 |
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기능 | N-CHANNEL Power MOSFET | ||
제조업체 | ST Microelectronics | ||
로고 | |||
전체 16 페이지수
STB11NK50Z - STP11NK50ZFP
STP11NK50Z
N-channel 500 V, 0.48 Ω , 10 A TO-220, TO-220FP, D2PAK
Zener-protected SuperMESHTM Power MOSFET
Features
Type
STB11NK50Z
STP11NK50ZFP
STP11NK50Z
VDSS
500 V
500 V
500 V
RDS(on)
max
ID
Pw
< 0.52 Ω 10 A 125 W
< 0.52 Ω 10 A 30 W
< 0.52 Ω 10 A 125 W
■ Extremely high dv/dt capability
■ 100% avalanche tested
■ Gate charge minimized
■ Very low intrinsic capacitances
Application
■ Switching applications
Description
The SuperMESH™ series is obtained through an
extreme optimization of ST’s well established
strip-based PowerMESH™ layout. In addition to
pushing on-resistance significantly down, special
care is taken to ensure a very good dv/dt
capability for the most demanding applications.
3
2
1
TO-220
3
1
D2PAK
3
2
1
TO-220FP
Figure 1. Internal schematic diagram
Table 1. Device summary
Order codes
Marking
STB11NK50ZT4
STP11NK50ZFP
STP11NK50Z
B11NK50Z
P11NK50ZFP
P11NK50Z
Package
D²PAK
TO-220FP
TO-220
Packaging
Tape and reel
Tube
Tube
May 2008
Rev 6
1/16
www.st.com
16
Electrical characteristics
STB11NK50Z - STP11NK50ZFP - STP11NK50Z
2 Electrical characteristics
(TCASE = 25 °C unless otherwise specified)
Table 5. On/off states
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
V(BR)DSS
Drain-source breakdown
voltage
IDSS
Zero gate voltage drain
current (VGS = 0)
IGSS
VGS(th)
RDS(on)
Gate body leakage current
(VDS = 0)
Gate threshold voltage
Static drain-source on
resistance
ID = 1 mA, VGS= 0
VDS = Max rating,
VDS = Max rating @125 °C
VGS = ±20 V
VDS= VGS, ID = 100 µA
VGS= 10 V, ID= 4.5 A
500
3
1
50
±10
3.75 4.5
0.48 0.52
V
µA
µA
µA
V
Ω
Table 6. Dynamic
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
gfs (1) Forward transconductance VDS =15 V, ID = 4.5 A
7.7 S
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS =25 V, f=1 MHz, VGS=0
1390
173
42
pF
pF
pF
Coss
(2)
eq .
Equivalent output
capacitance
VGS=0, VDS =0 to 400 V
110 pF
Qg Total gate charge
Qgs Gate-source charge
Qgd Gate-drain charge
VDD=400 V, ID = 11.4 A
VGS =10 V
(see Figure 18)
49 68 nC
10 nC
25 nC
1. Pulsed: pulse duration=300µs, duty cycle 1.5%
2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS
increases from 0 to 80% VDSS
4/16
4페이지 STB11NK50Z - STP11NK50ZFP - STP11NK50Z
Electrical characteristics
Figure 8. Transconductance
Figure 9. Static drain-source on resistance
Figure 10. Gate charge vs gate-source voltage Figure 11. Capacitance variations
Figure 12. Normalized gate threshold voltage Figure 13. Normalized on resistance vs
vs temperature
temperature
7/16
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부품번호 | 상세설명 및 기능 | 제조사 |
STP11NK50ZFP | N-CHANNEL Power MOSFET | ST Microelectronics |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |