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부품번호 | STP11NM60FP 기능 |
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기능 | N-CHANNEL Power MOSFET | ||
제조업체 | ST Microelectronics | ||
로고 | |||
전체 16 페이지수
STP11NM60 - STP11NM60FP
STB11NM60 - STB11NM60-1
N-channel 650V @ TJmax - 0.4Ω - 11A TO-220/FP/D2PAK/I2PAK
MDmesh™ Power MOSFET
General features
Type
STP11NM60
STP11NM60FP
STB11NM60
STB11NM60-1
VDSS
(@TJ=TJmax)
650V
650V
650V
650V
RDS(on)
<0.45Ω
<0.45Ω
<0.45Ω
<0.45Ω
ID
11A
11A
11A
11A
■ High dv/dt and avalanche capabilities
■ 100% avalanche tested
■ Low input capacitance and gate charge
■ Low gate input resistance
Description
The MDmesh™ is a new revolutionary MOSFET
technology that associates the Multiple Drain
process with the Company’s PowerMESH™
horizontal layout. The resulting product has an
outstanding low on-resistance, impressively high
dv/dt and excellent avalanche characteristics. The
adoption of the Company’s proprietary strip
technique yields overall dynamic performance
that is significantly better than that of similar
competition’s products.
Applications
■ Switching application
3
2
1
TO-220
3
2
1
TO-220FP
3
1
D2PAK
i2PAK
123
Internal schematic diagram
Order codes
Part number
STB11NM60T4
STB11NM60-1
STP11NM60
STP11NM60FP
Marking
B11NM60
B11NM60-1
P11NM60
P11NM60FP
Package
D²PAK
I²PAK
TO-220
TO-220FP
Packaging
Tape & reel
Tube
Tube
Tube
January 2007
Rev 6
1/16
www.st.com
16
Electrical characteristics
STP11NM60-STP11NM60FP-STB11NM60-STB11NM60-1
2 Electrical characteristics
(TCASE=25°C unless otherwise specified)
Table 4. On/off states
Symbol
Parameter
Test conditions
V(BR)DSS
Drain-source breakdown
voltage
IDSS
Zero gate voltage drain
current (VGS = 0)
IGSS
VGS(th)
RDS(on)
Gate body leakage current
(VDS = 0)
Gate threshold voltage
Static drain-source on
resistance
ID = 250 µA, VGS= 0
VDS = 600 V
VDS = 600 V, Tc=125°C
VGS = ±30V
VDS= VGS, ID = 250µA
VGS= 10V, ID= 5.5A
Min. Typ. Max. Unit
600 V
1 µA
10 µA
±100 nA
34 5V
0.4 0.45 Ω
Table 5. Dynamic
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
gfs (1) Forward transconductance
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer
capacitance
Coss eq Equivalent output
(2) capacitance
VDS > ID(on) x RDS(on)max,
ID = 5.5A
VDS =25V, f=1 MHz, VGS=0
VGS=0, VDS =0V to 480V
5.2
1000
230
25
100
S
pF
pF
pF
pF
RG Gate input resistance
f=1 MHz gate DC bias = 0
Test signal level = 20mV
open drain
1.6
Ω
Qg Total gate charge
Qgs Gate-source charge
Qgd Gate-drain charge
VDD=480V, ID = 11A
VGS =10V
(see Figure 15)
30 nC
10 nC
15 nC
1. Pulsed: pulse duration=300µs, duty cycle 1.5%
2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS
inceases from 0 to 80% VDSS
4/16
4페이지 STP11NM60-STP11NM60FP-STB11NM60-STB11NM60-1
Electrical characteristics
Figure 7. Transconductance
Figure 8. Static drain-source on resistance
Figure 9. Gate charge vs gate-source voltage Figure 10. Capacitance variations
Figure 11. Normalized gate threshold voltage Figure 12. Normalized on resistance vs
vs temperature
temperature
7/16
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구 성 | 총 16 페이지수 | ||
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부품번호 | 상세설명 및 기능 | 제조사 |
STP11NM60FD | N-CHANNEL Power MOSFET | ST Microelectronics |
STP11NM60FDFP | N-CHANNEL Power MOSFET | ST Microelectronics |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |