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부품번호 | BUK9735-55A 기능 |
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기능 | N-channel TrenchMOS logic level FET | ||
제조업체 | NXP Semiconductors | ||
로고 | |||
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www.DataSheet4U.com
BUK9735-55A
N-channel TrenchMOS™ logic level FET
Rev. 02 — 10 June 2004
M3D308
Product data
1. Description
N-channel enhancement mode field-effect power transistor in a plastic package using
TrenchMOS™1 technology, featuring very low on-state resistance.
Product availability:
BUK9735-55A in SOT186A (TO-220F).
2. Features
s TrenchMOS™ technology
s Q101 compliant
s 150 °C rated
s Logic level compatible.
3. Applications
s Automotive and general purpose power switching:
x 12 V and 24 V loads
x Motors, lamps and solenoids.
4. Pinning information
Table 1: Pinning - SOT186A, simplified outline and symbol
Pin Description
Simplified outline
1 gate (g)
2 drain (d)
mb
3 source (s)
mb mounting base;
isolated
1 2 3 MBK110
SOT186A (TO-220F)
Symbol
d
g
mbb076
s
1. TrenchMOS is a trademark of Koninklijke Philips Electronics N.V.
Philips Semiconductors
BUK9735-55A
N-channel TrenchMOS™ logic level FET
7. Thermal characteristics
Table 4: Thermal characteristics
Symbol Parameter
Conditions
Rth(j-mb) thermal resistance from junction to
mounting base
Figure 4
Rth(j-a) thermal resistance from junction to ambient vertical in still air
7.1 Transient thermal impedance
Min Typ Max Unit
- - 5 K/W
- 55 - K/W
10
Zth(j-mb)
(K/W)
δ = 0.5
1 0.2
0.1
0.05
10-1 0.02
10-2
10-6
Single Shot
10-5
10-4
10-3
03ne05
P
δ
=
tp
T
10-2
tp
T
t
10-1
tp (s)
1
Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration.
9397 750 13327
Product data
Rev. 02 — 10 June 2004
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
4 of 12
4페이지 Philips Semiconductors
BUK9735-55A
N-channel TrenchMOS™ logic level FET
2.5
VGS(th)
(V)
2
1.5
1
03aa33
max
typ
min
10-1
ID
(A)
10-2
10-3
10-4
03aa36
min typ max
0.5 10-5
0
-60 0 60 120 180
Tj (°C)
10-6
0123
VGS (V)
ID = 1 mA; VDS = VGS
Fig 9. Gate-source threshold voltage as a function of
junction temperature.
Tj = 25 °C; VDS = VGS
Fig 10. Sub-threshold drain current as a function of
gate-source voltage.
25
gfs
(S)
20
03na95
15
10
5
0
0 10 20 30 ID (A) 40
Tj = 25 °C; VDS = 25 V
Fig 11. Forward transconductance as a function of
drain current; typical values.
2500
C
(pF)
2000
1500
1000
Ciss
Coss
Crss
03na98
500
0
10-2
10-1
1
10 102
VDS (V)
VGS = 0 V; f = 1 MHz
Fig 12. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values.
9397 750 13327
Product data
Rev. 02 — 10 June 2004
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
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DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |