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What is P3503QVG?

This electronic component, produced by the manufacturer "Niko", performs the same function as "N- & P-Channel Enhancement Mode Field Effect Transistor".


P3503QVG Datasheet PDF - Niko

Part Number P3503QVG
Description N- & P-Channel Enhancement Mode Field Effect Transistor
Manufacturers Niko 
Logo Niko Logo 


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Total 8 Pages



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NIKO-SEM
N- & P-Channel Enhancement Mode
Field Effect Transistor
PRODUCT SUMMARY
V(BR)DSS RDS(ON)
N-Channel 30 25m
P-Channel -30 35m
ID
7A
-6A
P3503QVG
SOP-8
Lead-Free
G : GATE
D : DRAIN
S : SOURCE
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current1
Power Dissipation
Junction & Storage Temperature Range
TC = 25 °C
TC = 70 °C
TC = 25 °C
TC = 70 °C
VDS
VGS
ID
IDM
PD
Tj, Tstg
N-Channel P-Channel UNITS
30 -30 V
±20 ±20 V
7 -6
6 -5 A
20 -20
2
W
1.3
-55 to 150
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
Junction-to-Ambient
RθJA
1Pulse width limited by maximum junction temperature.
2Duty cycle 1%
TYPICAL
48
MAXIMUM
62.5
UNITS
°C / W
ELECTRICAL CHARACTERISTICS (TC = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
Drain-Source Breakdown Voltage
V(BR)DSS
Gate Threshold Voltage
VGS(th)
Gate-Body Leakage
IGSS
STATIC
VGS = 0V, ID = 250µA
VGS = 0V, ID = -250µA
VDS = VGS, ID = 250µA
VDS = VGS, ID = -250µA
VDS = 0V, VGS = ±20V
VDS = 0V, VGS = ±20V
LIMITS
UNIT
MIN TYP MAX
N-Ch 30
P-Ch -30
N-Ch 1 1.5 2.5
P-Ch -1 -1.5 -2.5
V
N-Ch
P-Ch
±100
nA
±100
1 OCT-08-2004

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P3503QVG equivalent
NIKO-SEM
N- & P-Channel Enhancement Mode
Field Effect Transistor
P3503QVG
SOP-8
Lead-Free
5 OCT-08-2004


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Part Details

On this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for P3503QVG electronic component.


Information Total 8 Pages
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Featured Datasheets

Part NumberDescriptionMFRS
P3503QVGThe function is N- & P-Channel Enhancement Mode Field Effect Transistor. NikoNiko

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