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Número de pieza | NP061A3 | |
Descripción | Silicon PNP epitaxial planar transistor | |
Fabricantes | Panasonic Semiconductor | |
Logotipo | ||
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Composite Transistors
NP061A3
Silicon PNP epitaxial planar transistor
For digital circuits
■ Features
• SSS-Mini type 6-pin package, reduction of the mounting area and
assembly cost by one half
• Maximum package height (0.4 mm) contributes to develop thinner
equipments
■ Basic Part Number
• UNR31A3 × 2
■ Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Collector current
Total power dissipation *
Junction temperature
Storage temperature
VCBO
VCEO
IC
PT
Tj
Tstg
−50
−50
−80
125
125
−55 to +125
Note) *: Measuring on substrate at 17 mm × 10 mm × 1 mm
Unit
V
V
mA
mW
°C
°C
0.12+-00..0023
654
123
(0.35) (0.35)
1.00±0.05
Display at No.1 lead
Unit: mm
0 to 0.02
1: Emitter (Tr1)
2: Emitter (Tr2)
3: Base (Tr2)
4: Collector (Tr2)
5: Base (Tr1)
6: Collector (Tr1)
SSSMini6-F1 Package
Marking Symbol: 1P
Internal Connection
65
4
Tr1 Tr2
■ Electrical Characteristics Ta = 25°C ± 3°C
123
Parameter
Symbol
Conditions
Min Typ Max Unit
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
hFE Ratio *
Collector-emitter saturation voltage
Output voltage high-level
Output voltage low-level
Input resistance
Resistance ratio
Transition frequency
VCBO
VCEO
ICBO
ICEO
IEBO
hFE
hFE(Small
/Large)
VCE(sat)
VOH
VOL
R1
R1 / R2
fT
IC = −10 µA, IE = 0
IC = −2 mA, IB = 0
VCB = −50 V, IE = 0
VCE = −50 V, IB = 0
VEB = −6 V, IC = 0
VCE = −10 V, IC = −5 mA
VCE = −10 V, IC = −5 mA
IC = −10 mA, IB = − 0.3 mA
VCC = −5 V, VB = − 0.5 V, RL = 1 kΩ
VCC = −5 V, VB = −3.5 V, RL = 1 kΩ
VCB = −10 V, IE = 1 mA, f = 200 MHz
−50
−50
80
0.50
−4.9
−30%
0.8
− 0.1
− 0.5
− 0.1
0.99
− 0.25
− 0.2
47 +30%
1.0 1.2
80
V
V
µA
µA
mA
V
V
V
kΩ
MHz
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Ratio between one and another
Publication date: July 2003
SJJ00258BED
1
1 page |
Páginas | Total 3 Páginas | |
PDF Descargar | [ Datasheet NP061A3.PDF ] |
Número de pieza | Descripción | Fabricantes |
NP061A3 | Silicon PNP epitaxial planar transistor | Panasonic Semiconductor |
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