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VNQ600AP 데이터시트 PDF




ST Microelectronics에서 제조한 전자 부품 VNQ600AP은 전자 산업 및 응용 분야에서
광범위하게 사용되는 반도체 소자입니다.


 

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부품번호 VNQ600AP 기능
기능 QUAD CHANNEL HIGH SIDE SOLID STATE RELAY
제조업체 ST Microelectronics
로고 ST Microelectronics 로고


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VNQ600AP 데이터시트, 핀배열, 회로
www.DataSheet4U.com
®P VNQ600AP
QUAD CHANNEL HIGH SIDE SOLID STATE RELAY
TYPE
VNQ600AP
RDS(on) (*)
35m
Ilim
22A
VCC
36 V
(*) Per each channel
s DC SHORT CIRCUIT CURRENT: 22A
s CMOS COMPATIBLE INPUTS
s PROPORTIONAL LOAD CURRENT SENSE
s UNDERVOLTAGE & OVERVOLTAGE
nSHUT-DOWN
s OVERVOLTAGE CLAMP
s THERMAL SHUT-DOWN
s CURRENT LIMITATION
s VERY LOW STAND-BY POWER DISSIPATION
s PROTECTION AGAINST:
nLOSS OF GROUND & LOSS OF VCC
s REVERSE BATTERY PROTECTION (**)
DESCRIPTION
The VNQ600AP is a quad HSD formed by
SO-28 (DOUBLE ISLAND)
ORDER CODES
PACKAGE
TUBE
T&R
SO-28
VNQ600AP VNQ600AP13TR
assembling two VND600 chips in the same SO-28
package. The VND600 is a monolithic device
designed in| STMicroelectronics VIPower M0-3
Technology. The VNQ600A is intended for driving
any type of multiple loads with one side connected
to ground. This device has four independent
channels and four analog sense outputs which
deliver currents proportional to the outputs
currents. Active current limitation combined with
thermal shut-down and automatic restart protect
the device against overload. Device automatically
turns off in case of ground pin disconnection.
ABSOLUTE MAXIMUM RATING
Symbol
VCC
-VCC
IOUT
IR
IIN
Parameter
Supply voltage (continuous)
Reverse supply voltage (continuous)
Output current (continuous), for each channel
Reverse output current (continuous), for each channel
Input current
VCSENSE Current sense maximum voltage
IGND
VESD
EMAX
Ptot
Tj
Tstg
Ground current at Tpins < 25°C (continuous)
Electrostatic Discharge (Human Body Model: R=1.5KΩ; C=100pF)
- INPUT
- CURRENT SENSE
- OUTPUT
- VCC
Maximum Switching Energy
(L=0.11mH; RL=0; Vbat=13.5V; Tjstart=150ºC; IL=40A)
Power dissipation (per island) at Tlead=25°C
Junction operating temperature
Storage temperature
Value
41
-0.3
15
-15
+/- 10
-3
+15
-200
4000
2000
5000
5000
126
6.25
Internally Limited
-55 to 150
Unit
V
V
A
A
mA
V
V
mA
V
V
V
V
mJ
W
°C
°C
(**) See application schematic at page 9.
April 2004
1/18




VNQ600AP pdf, 반도체, 판매, 대치품
VNQ600AP
THERMAL DATA (Per island)
Symbol
Rthj-lead
Rthj-amb
Rthj-amb
Parameter
Thermal resistance Junction-lead
Thermal resistance Junction-ambient (one chip ON)
Thermal resistance Junction-ambient (two chips ON)
Value
20
60 (*)
46 (*)
Unit
°C/W
°C/W
°C/W
(*) When mounted on a standard single-sided FR-4 board with 0.5cm2 of Cu (at least 35µm thick) connected to all VCC pins.
Horizontal mounting and no artificial air flow.
ELECTRICAL CHARACTERISTICS (8V<VCC<36V; -40°C<Tj<150°C; unless otherwise specified)
(Per each channel)
POWER
Symbol
Parameter
Test Conditions
Min Typ Max Unit
VCC (**)
VUSD (**)
VOV (**)
RON
Vclamp
Operating supply voltage
Undervoltage shut-down
Overvoltage shut-down
On state resistance
Clamp Voltage
IOUT1,2,3,4=5A; Tj=25°C
IOUT1,2,3,4=5A; Tj=150°C
IOUT1,2,3,4=3A; VCC=6V
ICC=20mA (see note 1)
5.5 13 36
V
3 4 5.5 V
36 V
35 m
70 m
120 m
41 48 55
V
IS (**)
Supply current
Off State; VCC=13V;
VIN=VOUT=VSENSE=0V
Off State; VCC=13V;
VIN=VOUT=VSENSE=0V; Tj =25°C
On State; VCC=13V; VIN=5V; IOUT=0A;
RSENSE=3.9KΩ; VSENSE=0V
12 40 µA
12 25 µA
6 mA
IL(off1)
IL(off3)
IL(off4)
Off state output current
Off State Output Current
Off State Output Current
VIN=VOUT=VSENSE=0V
VIN=VOUT=VSENSE=0V; VCC=13V;
Tj =125°C
VIN=VOUT=VSENSE=0V; VCC=13V;
Tj =25°C
0
50 µA
5 µA
3 µA
PROTECTIONS
Symbol
Ilim
TTSD
TR
Thyst
Vdemag
VON
Parameter
DC Short circuit current
Thermal shut-down
temperature
Thermal reset
temperature
Thermal hysteresis
Turn-off output voltage
clamp
Output voltage drop
limitation
Test Conditions
VCC=13V
5.5V<VCC<36V
IOUT=2A; L=6mH
IOUT=0.5A; Tj= -40°C...+150°C
Min Typ Max Unit
22 40 70
A
70 A
150 175 200
°C
135
7 15
VCC-41 VCC-48 VCC-55
50
°C
°C
V
mV
(**) Per island
4/18
1

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VNQ600AP 전자부품, 판매, 대치품
VNQ600AP
ELECTRICAL TRANSIENT REQUIREMENTS
ISO T/R
7637/1
Test Pulse
1
2
3a
3b
4
5
Test Levels
I
-25V
+25V
-25V
+25V
-4V
+26.5V
Test Levels
II
-50V
+50V
-50V
+50V
-5V
+46.5V
Test Levels
III
-75V
+75V
-100V
+75V
-6V
+66.5V
Test Levels
IV
-100V
+100V
-150V
+100V
-7V
+86.5V
Test Levels
Delays and Impedance
2ms, 10
0.2ms, 10
0.1µs, 50
0.1µs, 50
100ms, 0.01
400ms, 2
ISO T/R
7637/1
Test Pulse
1
2
3a
3b
4
5
Test Levels Result
I
C
C
C
C
C
C
Test Levels Result
II
C
C
C
C
C
E
Test Levels Result
III
C
C
C
C
C
E
Test Levels Result
IV
C
C
C
C
C
E
Class
C
E
Contents
All functions of the device are performed as designed after exposure to disturbance.
One or more functions of the device is not performed as designed after exposure and cannot be
returned to proper operation without replacing the device.
Figure 1: Switching Characteristics (Resistive load RL=2.6)
VOUT
80%
dVOUT/dt(on)
tr
ISENSE
90%
10%
90%
dVOUT/dt(off)
tf
t
INPUT
tDSENSE
td(on)
td(off)
t
t
7/18
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