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PDF AOL1408 Data sheet ( Hoja de datos )
| Número de pieza | AOL1408 | |
| Descripción | N-Channel Enhancement Mode Field Effect Transistor | |
| Fabricantes | Alpha & Omega Semiconductors | |
| Logotipo |  |
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AOL1408
N-Channel Enhancement Mode Field Effect Transistor
General Description
The AOL1408 uses advanced trench technology to
provide excellent RDS(ON), shoot-through immunity and
body diode characteristics. This device is ideally
suited for use as a low side switch in CPU core power
conversion. Standard Product AOL1408 is Pb-free
(meets ROHS & Sony 259 specifications). AOL1408L
is a Green Product ordering option. AOL1408 and
AOL1408L are electrically identical.
Features
VDS (V) = 30V
ID = 85A (VGS = 10V)
RDS(ON) < 4mΩ (VGS = 10V)
RDS(ON) < 6mΩ (VGS = 4.5V)
UIS Tested
Rg,Ciss,Coss,Crss Tested
Ultra SO-8TM Top View
Fits SOIC8
footprint !
S
G
D Bottom tab
connected to
drain
G
D
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
Continuous Drain
Current B,G
TC=25°C G
TC=100°C B
VGS
ID
Pulsed Drain Current
IDM
Continuous Drain
Current G
Avalanche Current C
TA=25°C
TA=70°C
Repetitive avalanche energy L=0.1mH C
IDSM
IAR
EAR
TC=25°C
Power Dissipation B TC=100°C
PD
TA=25°C
Power Dissipation A TA=70°C
PDSM
Junction and Storage Temperature Range TJ, TSTG
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
t ≤ 10s
Steady-State
Symbol
RθJA
Maximum Junction-to-Case C
Steady-State
RθJC
Maximum
30
±20
85
73
200
27
22
30
45
100
50
5
3
-55 to 175
Typ
19.6
48
1
Max
25
60
1.5
Units
V
V
A
A
mJ
W
W
°C
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
1 page  
AOL1408
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100 120
80
TA=25°C
100
80
60
60
40
40
20 20
0
0.00001
0.0001
0.001
0.01
Time in avalanche, tA (s)
Figure 12: Single Pulse Avalanche capability
0
0 25 50 75 100 125 150 175
TCASE (°C)
Figure 13: Power De-rating (Note B)
100 100
80 80
60 60
40 40
20 20
0
0 25 50 75 100 125 150 175
TCASE (°C)
Figure 14: Current De-rating (Note B)
0
0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 15: Single Pulse Power Rating Junction-to-
Ambient (Note H)
10
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
0.1
0.01
0.001
0.00001
Single Pulse
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=60°C/W
PD
Ton
T
0.0001
0.001
0.01
0.1
1
10 100
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
1000
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet AOL1408.PDF ] | |
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