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PDF AOL1418 Data sheet ( Hoja de datos )
| Número de pieza | AOL1418 | |
| Descripción | N-Channel Enhancement Mode Field Effect Transistor | |
| Fabricantes | Alpha & Omega Semiconductors | |
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AOL1418
N-Channel Enhancement Mode Field Effect Transistor
General Description
The AOL1418 uses advanced trench technology to
provide excellent RDS(ON), low gate chargeand low
gate resistance. This device is ideally suited for use
as a high side switch in CPU core power conversion.
Standard Product AOL1418 is Pb-free (meets ROHS
& Sony 259 specifications). AOL1418L is a Green
Product ordering option. AOL1418 and AOL1418L
are electrically identical.
Features
VDS (V) = 30V
ID = 85A (VGS = 10V)
RDS(ON) < 6.5mΩ (VGS = 10V)
RDS(ON) < 10.5mΩ (VGS = 4.5V)
Ultra SO-8TM Top View
Fits SOIC8
footprint !
S
G
D Bottom tab
connected to
drain
G
D
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
Continuous Drain
Current B
TC=25°C G
TC=100°C
VGS
ID
Pulsed Drain Current
IDM
Continuous Drain
Current G
Avalanche Current C
TA=25°C
TA=70°C
Repetitive avalanche energy L=0.3mH C
IDSM
IAR
EAR
TC=25°C
Power Dissipation B TC=100°C
PD
TA=25°C
Power Dissipation A TA=70°C
PDSM
Junction and Storage Temperature Range TJ, TSTG
Maximum
30
±20
85
70
200
15
12
30
135
100
50
2.5
1.6
-55 to 175
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Case C
t ≤ 10s
Steady-State
Steady-State
Symbol
RθJA
RθJC
Typ
19.5
48
1
Max
25
60
1.5
Units
V
V
A
A
mJ
W
W
°C
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
1 page  
AOL1418
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100 120
TA=25°C
80
90
60
60
40
30
20
0
0.00001
0.0001
0.001
0.01
Time in avalanche, tA (s)
Figure 12: Single Pulse Avalanche capability
0
0 25 50 75 100 125 150 175
TCASE (°C)
Figure 13: Power De-rating (Note B)
100
80
60
40
20
0
0 25 50 75 100 125 150 175
TCASE (°C)
Figure 14: Current De-rating (Note B)
10
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
100
80
60
40
20
0
0.01
0.1
1
10 100 1000
Pulse Width (s)
Figure 15: Single Pulse Power Rating Junction-to-
Ambient (Note H)
0.1
0.01
0.001
0.00001
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=60 °C/W
PD
Ton
T
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
100
1000
Alpha & Omega Semiconductor, Ltd.
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet AOL1418.PDF ] | |
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