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Número de pieza | AOL1428 | |
Descripción | N-Channel Enhancement Mode Field Effect Transistor | |
Fabricantes | Alpha & Omega Semiconductors | |
Logotipo | ||
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AOL1428
N-Channel Enhancement Mode Field Effect Transistor
General Description
The AOL1428 uses advanced trench technology to
provide excellent RDS(ON), low gate charge.This device
is suitable for use as a high side switch in SMPS and
general purpose applications. Standard Product
AOL1428 is Pb-free (meets ROHS & Sony 259
specifications). AOL1428L is a Green Product
ordering option. AOL1428 and AOL1428L are
electrically identical.
Features
VDS (V) = 30V
ID = 45A (VGS = 10V)
RDS(ON) <9.5mΩ (VGS = 10V)
RDS(ON) <16mΩ (VGS = 4.5V)
UIS Tested
Rg,Ciss,Coss,Crss Tested
Ultra SO-8TM Top View
Fits SOIC8
footprint !
D
Bottom tab
connected to
S
G
drain
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain
Current B
TC=25°C
TC=100°C
ID
Pulsed Drain Current
IDM
Continuous Drain
Current H
Avalanche Current C
TA=25°C
TA=70°C
Repetitive avalanche energy L=0.3mH C
IDSM
IAR
EAR
TC=25°C
Power Dissipation B TC=100°C
PD
TA=25°C
Power Dissipation A TA=70°C
PDSM
Junction and Storage Temperature Range TJ, TSTG
G
Maximum
30
±20
49
34
120
18
14
30
135
43
21
5
3
-55 to 175
D
S
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Case C
t ≤ 10s
Steady-State
Steady-State
Symbol
RθJA
RθJC
Typ
19
45
2.5
Max
25
55
3.5
Units
V
V
A
A
A
mJ
W
W
°C
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
1 page AOL1428
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
60
TA=25°C
50
40
30
20
10
0
0.000001 0.00001
0.0001
0.001
0.01
Time in avalanche, tA (s)
Figure 12: Single Pulse Avalanche capability
50
40
30
20
10
0
0
25 50 75 100 125 150
TCASE (°C)
Figure 13: Power De-rating (Note B)
175
60
40
20
0
0
25 50 75 100 125 150
TCASE (°C)
Figure 14: Current De-rating (Note B)
175
140
120
100 TJ(Max)=150°C
80 TA=25°C
60
40
20
0
0.0001 0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 15: Single Pulse Power Rating Junction-to-
Ambient (Note G)
10
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
0.1
0.01
0.001
0.00001
Single Pulse
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=55°C/W
PD
Ton T
0.0001
0.001
0.01
0.1
1
10 100
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note G)
1000
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
5 Page |
Páginas | Total 5 Páginas | |
PDF Descargar | [ Datasheet AOL1428.PDF ] |
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