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PDF AOL1432 Data sheet ( Hoja de datos )
| Número de pieza | AOL1432 | |
| Descripción | N-Channel Enhancement Mode Field Effect Transistor | |
| Fabricantes | Alpha & Omega Semiconductors | |
| Logotipo |  |
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AOL1432
N-Channel Enhancement Mode Field Effect Transistor
General Description
The AOL1432 uses advanced trench technology
and design to provide excellent RDS(ON) with low gate
charge. This device is suitable for use in PWM, load
switching and general purpose applications.
Standard product AOL1432 is Pb-free (meets
ROHS & Sony 259 specifications). AOL1432L is a
Green Product ordering option. AOL1432 and
AOL1432L are electrically identical.
Features
VDS (V) =25V
ID = 44 A (VGS = 10V)
RDS(ON) < 8.5 mΩ (VGS = 10V)
RDS(ON) < 14 mΩ (VGS = 4.5V)
UIS Tested
Rg,Ciss,Coss,Crss Tested
Ultra SO-8TM Top View
Fits SOIC8
footprint !
D
S
G
Bottom tab
connected to
drain
G
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain TC=25°C
Current
TC=100°C
Pulsed Drain Current C
ID
IDM
Continuous Drain TA=25°C
Current G
TA=70°C
Avalanche Current C
IDSM
IAR
Repetitive avalanche energy L=0.3mH C EAR
TC=25°C
Power Dissipation B TC=100°C
PD
TA=25°C
Power Dissipation A TA=70°C
PDSM
Junction and Storage Temperature Range TJ, TSTG
Maximum
25
±20
44
31
100
21
17
25
94
30
15
6
4
-55 to 175
D
S
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Case B
t ≤ 10s
Steady-State
Steady-State
Symbol
RθJA
RθJC
Typ
14.2
48
3.5
Max
20
60
5
Units
V
V
A
A
A
mJ
W
W
°C
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
1 page  
AOL1432
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
50 40
40
30
TA=25°C
20
10
30
20
10
0
0.00001
0.0001
0.001
Time in avalanche, tA (s)
Figure 12: Single Pulse Avalanche capability
0
0 25 50 75 100 125 150 175
TCASE (°C)
Figure 13: Power De-rating (Note B)
50 50
40 40 TA=25°C
30 30
20 20
10 10
0
0 25 50 75 100 125 150 175
TCASE (°C)
Figure 14: Current De-rating (Note B)
0
0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 15: Single Pulse Power Rating Junction-to-
Ambient (Note H)
10
D=Ton/T
In descending order
TJ,PK=TA+PDM.ZθJA.RθJA
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1 RθJA=60°C/W
0.1
0.01
0.001
0.00001
Single Pulse
PD
Ton T
0.0001
0.001
0.01
0.1
1
10 100
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
1000
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet AOL1432.PDF ] | |
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