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PDF AOL1440 Data sheet ( Hoja de datos )
| Número de pieza | AOL1440 | |
| Descripción | N-Channel Enhancement Mode Field Effect Transistor | |
| Fabricantes | Alpha & Omega Semiconductors | |
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AOL1440
N-Channel Enhancement Mode Field Effect Transistor
General Description
The AOL1440 uses advanced trench technology to
provide excellent RDS(ON), shoot-through immunity
and body diode characteristics. This device is ideally
suited for use as a low side switch in CPU core
power conversion.Standard Product AOL1440 is
Pb-free (meets ROHS & Sony 259 specifications).
AOL1440L is a Green Product ordering option.
AOL1440 and AOL1440L are electrically identical.
FFeeaattuurreess
VVDDSS((VV))==2255VV
IIDD==7755AA((VVGGSS==1100VV))
RRDDSS(O(ONN))<<33..22mmΩΩ((VVGGSS==2200VV))
RRDDSS(O(ONN))<<44..00mmΩW(V(VGGSS==1120VV) )
RRDDSS(O(ONN))<<55..22mmΩW(V(VGGSS==1102VV) )
UUIISSTTeesstteedd
RRgg,,CCiissss,,CCoossss,,CCrrssssTTeesstteedd
Ultra SO-8TM Top View
Fits SOIC8
footprint !
D
Bottom tab
connected to
S
G
drain
D
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Maximum
Drain-Source Voltage VDS 25
Gate-Source Voltage
Continuous Drain
Current B,G,
TC=25°C G
TC=100°C B
VGS
ID
±30
85
66
Pulsed Drain Current
Continuous Drain
Current G
Avalanche CurrentC
TA=25°C
TA=70°C
Repetitive avalanche energy L=0.3mHC
IDM
IDSM
IAR
EAR
200
25
20
30
135
TC=25°C
Power Dissipation B TC=100°C
PD
75
37
TA=25°C
Power Dissipation A TA=70°C
Junction and Storage Temperature Range
PDSM
TJ, TSTG
5
3
-55 to 175
Thermal Characteristics
Parameter
Symbol
Typ
Maximum Junction-to-AmbientA
Maximum Junction-to-AmbientA
t ≤ 10s
Steady-State
RθJA
19
45
Maximum Junction-to-CaseC
Steady-State
RθJC
1.5
Max
25
55
2
Units
V
V
A
A
A
mJ
W
W
°C
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
1 page  
AOL1440
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100
TA=25°C
80
25°C
60
40
150°C
20
0
0.00001
0.0001
0.001
Time in avalanche, tA (s)
Figure 12: Single Pulse Avalanche capability
80
70
60
50
40
30
20
10
0
0
25 50 75 100 125 150
TCASE (°C)
Figure 13: Power De-rating (Note B)
175
100
80
60
40
20
0
0 25 50 75 100 125 150 175
TCASE (°C)
Figure 14: Current De-rating (Note B)
100
80
60
40
20
0
0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 15: Single Pulse Power Rating Junction-to-
Ambient (Note H)
10
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
0.1
0.01
0.001
0.00001
Single Pulse
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=55°C/W
PD
Ton
T
0.0001
0.001
0.01
0.1
1
10 100
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
1000
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet AOL1440.PDF ] | |
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