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부품번호 | T2550H 기능 |
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기능 | Snubberless high temperature 25 A Triacs | ||
제조업체 | ST Microelectronics | ||
로고 | |||
전체 8 페이지수
www.DataSheet4U.com
T2550H
Snubberless™ high temperature 25 A Triacs
Main features
A2
Symbol
IT(RMS)
VDRM/VRRM
IGT (Q1)
Value
25
600
50
Unit
A
V
mA
G
A1
A2
Description
Specifically designed for use in high temperature
environment (found in hot appliances such as
cookers, ovens, hobs, electric heaters, coffee
machines...), the new 25 A T2550H triacs provide
an enhanced performance in terms of power loss
and thermal dissipation. This allows for
optimization of the heatsinking dimensioning,
leading to space and cost effectivness when
compared to electro-mechanical solutions.
Based on ST snubberless technology, they offer
high commutation switching capabilities and high
noise immunity levels. And, thanks to their clip
assembly technique, they provide a superior
performance in surge current handling.
A1
A2G
T0-220AB
T2550H-600TRG
Order code
Part Number
T2550H-600TRG
Marking
T2550H600T
Table 1. Absolute maximum ratings
Symbol
Parameter
IT(RMS) RMS on-state current (full sine wave)
ITSM
Non repetitive surge peak on-state
current (full cycle, Tj initial = 25° C)
I²t I²t Value for fusing
dI/dt
VDSM/VRSM
Critical rate of rise of on-state current
IG = 2 x IGT , tr ≤ 100 ns
Non repetitive surge peak off-state
voltage
IGM
PG(AV)
Tstg
Tj
Peak gate current
Average gate power dissipation
Storage junction temperature range
Operating junction temperature range
F = 50 Hz
F = 60 Hz
tp = 10 ms
F = 120 Hz
tp = 10 ms
tp = 20 µs
Tc = 125°C
t = 20 ms
t = 16.7 ms
Tj = 150°C
Tj = 25°C
Tj = 150°C
Tj = 150°C
Value
25
250
260
340
50
700
4
1
- 40 to + 150
- 40 to + 150
Unit
A
A
A²s
A/µs
V
A
W
°C
June 2006
Rev 7
1/8
www.st.com
8
Characteristics
T2550H
Figure 7.
Relative variation of gate trigger
current, holding current and
latching current versus junction
temperature (typical values)
Figure 8.
Relative variation of critical rate of
decrease of main current versus
(dV/dt)c (typical values)
IGT,IH,IL[Tj] / IGT,IH,IL[Tj=25°C]
2.5
2.0
IGT
1.5
IH & IL
1.0
0.5
Tj(°C)
0.0
-40 -20 0 20 40 60 80 100 120 140 160
(dI/dt)c [(dV/dt)c] / Specified (dI/dt)c
1.6
1.4
1.2
1.0
0.8
0.6
0.1
(dV/dt)c (V/µs)
1.0 10.0
100.0
Figure 9.
Relative variation of critical rate of Figure 10. Leakage current versus junction
decrease of main current versus
temperature for different values of
junction temperature
blocking voltage (typical values)
(dI/dt)c [Tj] / (dI/dt)c [Tj = 150°C]
8
IDRM / IRRM (mA)
1E+1
7
6
1E+0
VD = VR = 600V
5
VD = VR = 400V
4 1E-1
VD = VR = 200V
3
2 1E-2
1
Tj(°C)
0
1E-3
25 50 75 100 125 150
50
Tj(°C)
75 100 125
150
Figure 11. Acceptable repetitive peak off-state
voltage versus case-ambient
thermal resistance
Rth(c-a)(°C/W)
10
9
8
7
6
5
4
3
2
1
0
300
350
VDRM / VRRM (V)
400 450 500
Rth(j-c)=0.8 °C/W
TJ=150 °C
550 600
4/8
4페이지 T2550H
4 Ordering information
Ordering information
Ordering type
T2550H-600TRG
Marking
T2550H600T
Package
TO-220AB
Weight Base qty Delivery mode
2.3 g
50
Tube
5 Revision history
Date
Apr-2002
13-Feb-2006
20-Jun-2006
Revision
Changes
5A Last update.
6
TO-220AB delivery mode changed from bulk to tube.
ECOPACK statement added.
7 Reformatted to current standards. Figures 6 and 11 replaced.
7/8
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구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
T2550-12G | 1200V 25A Snubberless Triac | STMicroelectronics |
T2550-12I | 1200V 25A Snubberless Triac | STMicroelectronics |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |