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PDF SUV90N06-05 Data sheet ( Hoja de datos )
| Número de pieza | SUV90N06-05 | |
| Descripción | N-Channel MOSFET | |
| Fabricantes | Vishay Siliconix | |
| Logotipo |  |
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SUV90N06-05
Vishay Siliconix
N-Channel 60-V (D-S) 200_C MOSFET
PRODUCT SUMMARY
V(BR)DSS (V)
60
rDS(on) (W)
0.0052 @ VGS = 10 V
0.0072 @ VGS = 4.5 V
ID (A)
90 a
TO-262
1 23
D
G
FEATURES
D TrenchFETr Power MOSFETS
D 200_C Junction Temperature
D PWM Optimized
APPLICATIONS
D Isolated DC/DC Converters
- Primary-Side Switch
D Automotive
- Fan Motors
- 12-V Boardnet
- Motor Drives
G DS
Top View
SUV90N06-05
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
VDS
VGS
60
"20
Continuous Drain Current (TJ = 175_C)
Pulsed Drain Current
Avalanche Current
Repetitive Avalanche Energyb
Maximum Power Dissipationb
Operating Junction and Storage Temperature Range
TC = 25_C
TC = 125_C
L = 0.1 mH
TC = 25_C
TA = 25_Cd
ID
IDM
IAR
EAR
PD
TJ, Tstg
90a
90a
240
75
280
350c
4.3
- 55 to 200
Unit
V
A
mJ
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Junction-to-Ambient (PCB Mount)d
Junction-to-Case
Notes
a. Package limited.
b. Duty cycle v 1%.
c. See SOA curve for voltage derating.
d. When mounted on 1” square PCB (FR-4 material).
Document Number: 72112
S-03079—Rev. A, 03-Feb-03
Symbol
RthJA
RthJC
Limit
40
0.5
Unit
_C/W
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THERMAL RATINGS
Maximum Drain Current vs.
Case Temperature
100
80
60
40
20
0
0 25 50 75 100 125 150 175 200
TC - Ambient Temperature (_C)
1000
100
10
1
0.1
0.1
SUV90N06-05
Vishay Siliconix
Safe Operating Area
Limited
by rDS(on)
TC = 25_C
Single Pulse
10 ms
100 ms
1 ms
10 ms
100 ms
dc
1 10
VDS - Drain-to-Source Voltage (V)
100
2
1 Duty Cycle = 0.5
0.2
Normalized Thermal Transient Impedance, Junction-to-Case
0.1
0.01
10 - 4
0.1
0.05
0.02
Single Pulse
10 - 3
10 - 2
10 - 1
Square Wave Pulse Duration (sec)
1
10
Document Number: 72112
S-03079—Rev. A, 03-Feb-03
www.vishay.com
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| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet SUV90N06-05.PDF ] | |
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