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HA3B2840-9 데이터시트 PDF




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부품번호 HA3B2840-9 기능
기능 600MHz/ Very High Slew Rate Operational Amplifier
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HA3B2840-9 데이터시트, 핀배열, 회로
Semiconductor
SOeBeSHOAL-E2T5E40PoRrOHDAU-2C8T50
HA-2840
September 1998 File Number 2842.3
600MHz, Very High Slew Rate
Operational Amplifier
The HA-2840 is a wideband, very high slew rate, operational
amplifier featuring superior speed and bandwidth
characteristics. Bipolar construction, coupled with dielectric
isolation, delivers outstanding performance in circuits with a
closed loop gain of 10 or greater.
A 625V/µs slew rate and a 600MHz gain bandwidth product
ensure high performance in video and RF amplifier designs.
Differential gain and phase are a low 0.03% and 0.03
degrees respectively, making the HA-2840 ideal for video
applications. A full ±10V output swing, high open loop gain,
and outstanding AC parameters, make the HA-2840 an
excellent choice for high speed Data Acquisition Systems.
The HA-2840 is available in commercial and industrial
temperature ranges, and a choice of packages. See the
“Ordering Information” below for more information. For
military grade product, refer to the HA-2840/883 data sheet.
Part Number Information
PART NUMBER
(BRAND)
HA3B2840-5
HA3-2840-5
HA9P2840-5
(H28405)
TEMP.
RANGE (oC)
PACKAGE
0 to 75 14 Ld PDIP
0 to 75 8 Ld PDIP
0 to 75 8 Ld SOIC
HA3B2840-9
HA7-2840-9
HA3-2840-9
-40 to 85
-40 to 85
-40 to 85
14 Ld PDIP
8 Ld CERDIP
8 Ld PDIP
PKG.
NO.
E14.3
E8.3
M8.15
E14.3
F8.3A
E8.3
Features
• Low Supply Current . . . . . . . . . . . . . . . . . . . . . . . . . 13mA
• Very High Slew Rate . . . . . . . . . . . . . . . . . . . . . . 625V/µs
• Open Loop Gain . . . . . . . . . . . . . . . . . . . . . . . . . . . 25kV/V
• Wide Gain-Bandwidth (AV 10) . . . . . . . . . . . . . . 600MHz
• Full Power Bandwidth . . . . . . . . . . . . . . . . . . . . . . . 10MHz
• Low Offset Voltage . . . . . . . . . . . . . . . . . . . . . . . . . .0.6mV
• Differential Gain/Phase. . . . . . . . . . . 0.03%/0.03 Degrees
• Enhanced Replacement for EL2039
Applications
• Pulse and Video Amplifiers
• Wideband Amplifiers
• High Speed Sample-Hold Circuits
• RF Oscillators
Pinouts
HA-2840
(CERDIP, PDIP, SOIC)
TOP VIEW
NC 1
-IN 2
+IN 3
V- 4
8 NC
7 V+
6 OUT
5 NC
HA-2840
(PDIP)
TOP VIEW
NC 1
NC 2
NC 3
-IN 4
+IN 5
V- 6
NC 7
14 NC
13 NC
12 NC
11 V+
10 OUT
9 NC
8 NC
NOTE: No Connection (NC) pins may be tied to a ground plane for
better isolation and heat dissipation.
1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
Copyright © Harris Corporation 1998




HA3B2840-9 pdf, 반도체, 판매, 대치품
HA-2840
Test Circuits and Waveforms (Continued)
V+ 0.001µF
INPUT
200
- 1µF
+ 0.001µF
500
SETTLING
POINT
V- 1µF
2k
5k
OUTPUT
PROBE
MONITOR
NOTES:
12. AV = -10.
13. Load Capacitance should be less than 10pF.
14. It is recommended that resistors be carbon composition
and that feedback and summing network ratios be
matched to 0.1%.
15. SETTLING POINT (Summing Node) capacitance should
be less than 10pF. For optimum settling time results, it is
recommended that the test circuit be constructed directly
onto the device pins. A Tektronix 568 Sampling
Oscilloscope with S-3A sampling heads is recommend-
ed as a settle point monitor.
SETTLING TIME TEST CIRCUIT
Typical Performance Curves TA = 25oC, VSUPPLY = ±15V, RL = 1k, CL < 10pF, Unless Otherwise Specified
100
80
60
40
20
0
AVCL = 1000
OPEN LOOP
AVCL = 100 AVCL = 10
OPEN LOOP
0
90
180
1K
10K 100K
1M
10M 100M
FREQUENCY (Hz)
FIGURE 1. FREQUENCY RESPONSE FOR VARIOUS GAINS
650
600
550
500
5 6 7 8 9 10 11 12 13 14 15
SUPPLY VOLTAGE (±V)
FIGURE 2. GAIN BANDWIDTH PRODUCT vs SUPPLY VOLTAGE
750
650
550
450
350
250
-60 -40 -20
0 20 40 60 80
TEMPERATURE (oC)
100 120 140
FIGURE 3. GAIN BANDWIDTH PRODUCT vs TEMPERATURE
90
80
70
60
50
40
30
20
100
1K
10K 100K
1M
FREQUENCY (Hz)
FIGURE 4. CMRR vs FREQUENCY
10M
4

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HA3B2840-9 전자부품, 판매, 대치품
Die Characteristics
DIE DIMENSIONS:
65 mils x 52 mils x 19 mils
1650µm x 1310µm x 483µm
METALLIZATION:
Type: Aluminum, 1% Copper
Thickness: 16kÅ ±2kÅ
PASSIVATION:
Type: Nitride over Silox
Silox Thickness: 12kÅ ±2kÅ
Nitride thickness: 3.5kÅ ±1kÅ
Metallization Mask Layout
-IN
+IN
HA-2840
SUBSTRATE POTENTIAL (Powered Up):
V-
TRANSISTOR COUNT:
34
PROCESS:
High Frequency Bipolar Dielectric Isolation
HA-2840
V+
OUT
V-
7

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600MHz/ Very High Slew Rate Operational Amplifier

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HA3B2840-9

600MHz/ Very High Slew Rate Operational Amplifier

Harris Corporation
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