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2MBI200U4B-120 데이터시트 PDF




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기능 IGBT MODULE
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2MBI200U4B-120 데이터시트, 핀배열, 회로
www.DataSheet4U.com
SPECIFICATION
Device Name : IGBT MODULE
Type Name
: 2MBI200U4B-120
Spec. No. :
MS5F 6032
Feb. 09 05 S.Miyashita
Feb. 09 05 T.Miyasaka
K.Yamada
Y.Seki
MS5F6032
1
13
H04-004-07b




2MBI200U4B-120 pdf, 반도체, 판매, 대치품
3. Absolute Maximum Ratings ( at Tc= 25oC unless otherwise specified )
It em s
Symbols
Conditions
Collector-Emitter voltage
Gate-Emitter voltage
VCES
VGES
Ic
Continuous
Collector current
Icp 1ms
-Ic
-Ic pulse
1ms
Collector Power Dissipation
Pc 1 device
Junction temperature
Tj
Storage temperature
Tstg
Isolation
voltage
between terminal and copper base (*1)
Viso
AC : 1min.
Screw Mounting (*2)
Torque Terminals (*2)
-
(*1) All terminals should be connected together when isolation test will be done.
(*2) Recommendable Value : 2.5 to 3.5 Nm (M5)
Tc=25oC
Tc=80oC
Tc=25oC
Tc=80oC
Max i m u m
Ratings
1200
±20
300
200
600
400
200
400
1040
+150
-40 to +125
Units
V
V
A
W
oC
2500
VAC
3.5 N m
4. Electrical characteristics ( at Tj= 25oC unless otherwise specified )
It em s
Sym b o l s
Conditions
Characteristics
min. typ. max.
Zero gate voltage
collector current
ICES
VCE=1200V
VGE=0V
- - 2.0
Gate-Emitter
leakage current
IGES
VCE=0V
VGE=±20V
- - 400
Gate-Emitter
threshold voltage
VGE(th)
VCE=20V
Ic=200mA
4.5 6.5 8.5
VCE(sat) Ic=200A
Tj=25oC
-
2.10 2.25
Collector-Emitter
(terminal) VGE=15V
Tj=125oC
-
2.30
-
saturation voltage
VCE(sat)
Tj=25oC
-
1.90 2.05
(chip)
Tj=125oC
-
2.10
-
Input capacitance
Cies
VCE=10V,VGE=0V,f=1MHz -
22
-
ton Vcc=600V
- 0.32 1.20
Turn-on time
tr Ic=200A
- 0.10 0.60
tr(i) VGE=±15V
- 0.03
-
Turn-off time
toff RG=3.0Ω
tf
- 0.41 1.00
- 0.07 0.30
VF
IF=200A
Tj=25oC
-
1.85 2.00
Forward on voltage
(terminal)
VF
VGE=0V
Tj=125oC
Tj=25oC
-
-
1.95 -
1.65 1.80
(chip)
Tj=125oC
-
1.75
-
Reverse recovery time
trr
IF=200A
- - 0.35
Lead resistance,
terminal-chip (*3)
R lead
- 0.97
-
(*3) Biggest internal terminal resistance among arm.
Units
mA
nA
V
V
nF
us
V
us
mΩ
MS5F6032
4
13
H04-004-03a

4페이지










2MBI200U4B-120 전자부품, 판매, 대치품
Reliability Test Items
Test
cate-
gories
Test items
1 High temperature
Reverse Bias
2 High temperature
Bias (for gate)
3 Temperature
Humidity Bias
4 Intermitted
Operating Life
(Power cycle)
( for IGBT )
Test methods and conditions
Test temp.
Bias Voltage
Bias Method
Test duration
Test temp.
Bias Voltage
Bias Method
Test duration
Test temp.
Relative humidity
Bias Voltage
Bias Method
Test duration
ON time
OFF time
Test temp.
Number of cycles
: Ta = 125±5
(Tj 150 )
: VC = 0.8×VCES
: Applied DC voltage to C-E
VGE = 0V
: 1000hr.
: Ta = 125±5
(Tj 150 )
: VC = VGE = +20V or -20V
: Applied DC voltage to G-E
VCE = 0V
: 1000hr.
: 85±2 oC
: 85±5%
: VC = 0.8×VCES
: Applied DC voltage to C-E
VGE = 0V
: 1000hr.
: 2 sec.
: 18 sec.
: Tj=100±5 deg
Tj 150 , Ta=25±5
: 15000 cycles
Reference
norms
EIAJ ED-4701
(Aug.-2001 edition)
Number
of
sample
Accept-
ance
number
Test Method 101 5 ( 0 : 1 )
Test Method 101 5 ( 0 : 1 )
Test Method 102 5 ( 0 : 1 )
Condition code C
Test Method 106 5 ( 0 : 1 )
Failure Criteria
Item
Characteristic
Symbol
Failure criteria
Unit
Note
Lower limit Upper limit
Electrical
Leakage current
ICES - USL×2 mA
characteristic
±IGES
-
USL×2 A
Gate threshold voltage VGE(th) LSL×0.8 USL×1.2 mA
Saturation voltage
VCE(sat)
-
USL×1.2 V
Forward voltage
VF - USL×1.2 V
Thermal IGBT
VGE - USL×1.2 mV
resistance
or VCE
FWD
VF - USL×1.2 mV
Isolation voltage
Viso Broken insulation -
Visual
Visual inspection
inspection
Peeling
-
The visual sample
-
Plating
and the others
LSL : Lower specified limit.
USL : Upper specified limit.
Note : Each parameter measurement read-outs shall be made after stabilizing the components
at room ambient for 2 hours minimum, 24 hours maximum after removal from the tests.
And in case of the wetting tests, for example, moisture resistance tests, each component
shall be made wipe or dry completely before the measurement.
MS5F6032
7
13
H04-004-03a

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