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BAR63V-04W 데이터시트 PDF




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기능 RF PIN Diode
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BAR63V-04W 데이터시트, 핀배열, 회로
www.DataSheet4U.com
VISHAY
RF PIN Diodes - Dual, Series in SOT-323
BAR63V-04W
Vishay Semiconductors
Description
Characterized by a very low reverse Capacitance the
PIN Diode BAR63V-04W was designed for RF signal
tuning. As a function of the forward bias current the
forward resistance (rf) can be adjusted to less than
1 while the low reverse capacitance offers a high
isolation. Typical applications for this PIN Diodes are
wireless, mobile and TV-systems.
2
1
3
12
3 18379
Features
• Low forward resistance
• Very small reverse capacitance
Applications
For frequency up to 3 GHz
RF-signal tuning
Mobile , wireless and TV-Applications
Mechanical Data
Case: Plastic case (SOT-323)
Weight: approx. 6.0 mg
Packaging Codes/Options:
GS18 / 10 k per 13" reel (8 mm tape), 10 k/box
GS08 / 3 k per 7" reel (8 mm tape), 15 k/box
Parts Table
Part
BAR63V-04W
Ordering code
BAR63V-04W-GS18 or BAR63V-04W-GS08
Marking
CW4
Remarks
Tape and Reel
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Reverse voltage
Forward current
Junction temperature
Storage temperature range
Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Reverse voltage
IR = 10 µA
Reverse current
VR = 35 V
Forward voltage
IF = 100 mA
Diode capacitance
f = 1 MHz, VR = 0
f = 1 MHz, VR = 5 V
Symbol
VR
IF
Tj
Tstg
Value
50
100
150
- 55 to + 150
Unit
V
mA
°C
°C
Symbol
Min
Typ.
Max
Unit
VR 50
V
IR 10 nA
VF 1.2 V
CD 0.28 pF
CD
0.23 0.3
pF
Document Number 85698
Rev. 1.2, 26-Apr-04
www.vishay.com
1




BAR63V-04W pdf, 반도체, 판매, 대치품
BAR63V-04W
Vishay Semiconductors
VISHAY
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and
operatingsystems with respect to their impact on the health and safety of our employees and the public, as
well as their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the
use of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
www.vishay.com
4
Document Number 85698
Rev. 1.2, 26-Apr-04

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부품번호상세설명 및 기능제조사
BAR63V-04W

RF PIN Diode

Vishay Siliconix
Vishay Siliconix

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