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PDF BUD43D2 Data sheet ( Hoja de datos )
| Número de pieza | BUD43D2 | |
| Descripción | Bipolar NPN Transistor | |
| Fabricantes | ON Semiconductor | |
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BUD43D2
Bipolar NPN Transistor
High Speed, High Gain Bipolar NPN
Transistor Integrating an Antisaturation
Network and a Transient Voltage
Suppression Capability
The BUD43D2 is a state–of–the–art bipolar transistor. Tight
dynamic characteristics and lot to lot minimum spread make it ideally
suitable for light ballast applications.
Main Features:
• Free Wheeling Diode Built In
• Flat DC Current Gain
• Fast Switching Times and Tight Distribution
• “6 Sigma” Process Providing Tight and Reproducible Parameter
Spreads
Two Versions:
• BUD43D2–1: Case 369 for Insertion Mode
• BUD43D2: Case 369A for Surface Mount Mode
MAXIMUM RATINGS
Rating
Symbol
Collector–Emitter Sustaining Voltage
Collector–Base Breakdown Voltage
Collector–Emitter Breakdown Voltage
Emitter–Base Voltage
Collector Current – Continuous
Collector Current – Peak (Note 1)
Base Current – Continuous
Base Current – Peak (Note 1)
TYPICAL GAIN
VCEO
VCBO
VCES
VEBO
IC
ICM
IB
IBM
Typical Gain
@ IC = 100 mA, VCE = 1 V
@ IC = 0.3 A, VCE = 1 V
THERMAL CHARACTERISTICS
hFE
Characteristic
Symbol
Total Device Dissipation
@ TC = 25°C
Derate above 25°C
PD
Operating and Storage
Temperature Range
TJ, Tstg
Thermal Resistance –
Junction–to–Case
RqJC
Thermal Resistance –
Junction–to–Ambient
RqJA
Maximum Lead Temperature for Soldering
Purposes: 1/8″ from Case for 5 sec.
TL
1. Pulse Test: Pulse Width = 5.0 ms, Duty Cycle = 10%
Value
400
700
700
12
2.0
5.0
1.0
2.0
55
32
Value
25
0.2
–65 to
+150
5.0
71.4
260
Unit
Vdc
Vdc
Vdc
Vdc
Adc
Adc
–
Unit
W
W/°C
°C
°C/W
°C/W
°C
© Semiconductor Components Industries, LLC, 2002
June, 2002 – Rev. 2
1
http://onsemi.com
2 AMPERES
700 VOLTS
25 WATTS
POWER TRANSISTOR
DPAK
CASE 369
STYLE 1
DPAK
CASE 369A
STYLE 1
MARKING DIAGRAMS
YWW
BUD
43D2
YWW
BUD
43D2
Y = Year
WW = Work Week
BUD43D2 = Device Code
ORDERING INFORMATION
Device
Package
Shipping
BUD43D2–1
DPAK
75 Units/Rail
Publication Order Number:
BUD43D2/D
1 page  
BUD43D2
10 10
1 –20°C
25°C
TJ = 125°C
0.1
0.001
0.01 0.1
1
IC, COLLECTOR CURRENT (AMPS)
10
Figure 7. Base–Emitter Saturation Region
IC/IB = 5
10
1 –20°C
25°C
TJ = 125°C
0.1
0.001
0.01 0.1
1
IC, COLLECTOR CURRENT (AMPS)
10
Figure 8. Base–Emitter Saturation Region
IC/IB = 10
10
1 –20°C
25°C
TJ = 125°C
0.1
0.001
0.01 0.1
1
IC, COLLECTOR CURRENT (AMPS)
10
Figure 9. Base–Emitter Saturation Region
IC/IB = 20
VEC(V) = –20°C
1
125°C
25°C
0.1
0.01
0.1
1 10
REVERSE EMITTER–COLLECTOR CURRENT (AMPS)
Figure 10. Forward Diode Voltage
1000
100
10
1
1
Cib (pF)
TJ = 25°C
f(test) = 1 MHz
Cob (pF)
10
VR, REVERSE VOLTAGE (VOLTS)
Figure 11. Capacitance
100
1000
900
800
BVCER @ ICER = 10 mA
TC = 25°C
700 BVCER(sus) @ ICER = 200 mA,
LC = 25 mH
600
500
400
10
100
RBE
Figure 12. BVCER = f(RBE)
1000
http://onsemi.com
5
5 Page 
BUD43D2
PACKAGE DIMENSIONS
DPAK
CASE 369A–13
ISSUE AB
B
VR
–T–
SEATING
PLANE
C
E
S
F
4
1 23
A
K
J
LH
D 2 PL
G 0.13 (0.005) M T
U
Z
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
INCHES
DIM MIN MAX
A 0.235 0.250
B 0.250 0.265
C 0.086 0.094
D 0.027 0.035
E 0.033 0.040
F 0.037 0.047
G 0.180 BSC
H 0.034 0.040
J 0.018 0.023
K 0.102 0.114
L 0.090 BSC
R 0.175 0.215
S 0.020 0.050
U 0.020 ---
V 0.030 0.050
Z 0.138 ---
MILLIMETERS
MIN MAX
5.97 6.35
6.35 6.73
2.19 2.38
0.69 0.88
0.84 1.01
0.94 1.19
4.58 BSC
0.87 1.01
0.46 0.58
2.60 2.89
2.29 BSC
4.45 5.46
0.51 1.27
0.51 ---
0.77 1.27
3.51 ---
STYLE 1:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
http://onsemi.com
11
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| Páginas | Total 12 Páginas | |
| PDF Descargar | [ Datasheet BUD43D2.PDF ] | |
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