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BUD43D2 PDF 데이터시트 : 부품 기능 및 핀배열

부품번호 BUD43D2
기능 Bipolar NPN Transistor
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BUD43D2 데이터시트, 핀배열, 회로
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BUD43D2
Bipolar NPN Transistor
High Speed, High Gain Bipolar NPN
Transistor Integrating an Antisaturation
Network and a Transient Voltage
Suppression Capability
The BUD43D2 is a state–of–the–art bipolar transistor. Tight
dynamic characteristics and lot to lot minimum spread make it ideally
suitable for light ballast applications.
Main Features:
Free Wheeling Diode Built In
Flat DC Current Gain
Fast Switching Times and Tight Distribution
“6 Sigma” Process Providing Tight and Reproducible Parameter
Spreads
Two Versions:
BUD43D2–1: Case 369 for Insertion Mode
BUD43D2: Case 369A for Surface Mount Mode
MAXIMUM RATINGS
Rating
Symbol
Collector–Emitter Sustaining Voltage
Collector–Base Breakdown Voltage
Collector–Emitter Breakdown Voltage
Emitter–Base Voltage
Collector Current – Continuous
Collector Current – Peak (Note 1)
Base Current – Continuous
Base Current – Peak (Note 1)
TYPICAL GAIN
VCEO
VCBO
VCES
VEBO
IC
ICM
IB
IBM
Typical Gain
@ IC = 100 mA, VCE = 1 V
@ IC = 0.3 A, VCE = 1 V
THERMAL CHARACTERISTICS
hFE
Characteristic
Symbol
Total Device Dissipation
@ TC = 25°C
Derate above 25°C
PD
Operating and Storage
Temperature Range
TJ, Tstg
Thermal Resistance –
Junction–to–Case
RqJC
Thermal Resistance –
Junction–to–Ambient
RqJA
Maximum Lead Temperature for Soldering
Purposes: 1/8from Case for 5 sec.
TL
1. Pulse Test: Pulse Width = 5.0 ms, Duty Cycle = 10%
Value
400
700
700
12
2.0
5.0
1.0
2.0
55
32
Value
25
0.2
–65 to
+150
5.0
71.4
260
Unit
Vdc
Vdc
Vdc
Vdc
Adc
Adc
Unit
W
W/°C
°C
°C/W
°C/W
°C
© Semiconductor Components Industries, LLC, 2002
June, 2002 – Rev. 2
1
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2 AMPERES
700 VOLTS
25 WATTS
POWER TRANSISTOR
DPAK
CASE 369
STYLE 1
DPAK
CASE 369A
STYLE 1
MARKING DIAGRAMS
YWW
BUD
43D2
YWW
BUD
43D2
Y = Year
WW = Work Week
BUD43D2 = Device Code
ORDERING INFORMATION
Device
Package
Shipping
BUD43D2–1
DPAK
75 Units/Rail
Publication Order Number:
BUD43D2/D




BUD43D2 pdf, 반도체, 판매, 대치품
100
–20°C
10
25°C
TJ = 125°C
BUD43D2
100
–20°C
10
25°C
1
TJ = 125°C
1
0.001
0.01 0.1
1
IC, COLLECTOR CURRENT (AMPS)
Figure 1. DC Current Gain @ VCE = 1 V
10
0.1
0.001
0.01 0.1
1
IC, COLLECTOR CURRENT (AMPS)
Figure 2. DC Current Gain @ VCE = 5 V
10
3 10
TJ = 25°C
2
2A
1.5 A
1 1A
0.4 A
IC = 0.2 A
0
0.001
0.01
0.1
1
IB, BASE CURRENT (AMPS)
Figure 3. Collector Saturation Region
10
1
TJ = 125°C
0.1 –20°C
25°C
0.01
0.001
0.01 0.1
1
IC, COLLECTOR CURRENT (AMPS)
10
Figure 4. Collector–Emitter Saturation Voltage
IC/IB = 5
100 10
10
1
TJ = 125°C
0.1 –20°C
25°C
0.01
0.001
0.01 0.1
1
IC, COLLECTOR CURRENT (AMPS)
10
Figure 5. Collector–Emitter Saturation Voltage
IC/IB = 10
1
TJ = 125°C
0.1 –20°C
25°C
0.01
0.001
0.01 0.1
1
IC, COLLECTOR CURRENT (AMPS)
10
Figure 6. Collector–Emitter Saturation Voltage
IC/IB = 20
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BUD43D2 전자부품, 판매, 대치품
BUD43D2
1000
900
800
700
IBon = IBoff,
VCE = 15 V,
VZ = 300 V
LC = 200 mH
600
500
400
hFE = 20,
TJ = 125°C
hFE = 10,
TJ = 125°C
hFE = 20,
TJ = 25°C
300 hFE = 10,
TJ = 25°C
200
100
0
0.5 1 1.5
IC, COLLECTOR CURRENT (AMPS)
2
Figure 19. Inductive Fall Time,
tfi @ hFE = 10 and 20
2200
2000
1800
1600
1400
1200
IBon = IBoff,
VCC = 15 V,
VZ = 300 V
LC = 200 mH
hFE = 20,
TJ = 125°C
hFE = 10,
TJ = 125°C
1000
800
600
400
200
0
0
hFE = 20,
TJ = 25°C
hFE = 10,
TJ = 25°C
0.5 1 1.5
IC, COLLECTOR CURRENT (AMPS)
2
Figure 20. Inductive Cross Over Time,
tc @ hFE = 10
5 IBon = IBoff,
VCC = 15 V,
VZ = 300 V
4 LC = 200 mH
3 IC = 1 A, TJ = 125°C
IC = 1 A, TJ = 25°C
2 IC = 0.3 A, TJ = 125°C
IC = 0.3 A, TJ = 25°C
1
3 4 5 6 7 8 9 10 11 12 13 14 15
hFE, FORCED GAIN
Figure 21. Inductive Storage Time, tsi
700
IBon = IBoff,
600
VCC = 15 V,
VZ = 300 V
LC = 200 mH
500
400
IC = 1 A, TJ = 125°C
IC = 0.3 A,
TJ = 125°C
300
IC = 0.3 A, TJ = 25°C
200
100 IC = 1 A, TJ = 25°C
3 4 5 6 7 8 9 10 11 12 13 14 15
hFE, FORCED GAIN
Figure 22. Inductive Fall Time, tf
1000
900
800
700
IBon = IBoff,
VCC = 15 V,
VZ = 300 V
LC = 200 mH
IC = 1 A, TJ = 125°C
600
500
400
IC = 0.3 A,
TJ = 125°C
IC = 1 A, TJ = 25°C
300
200 IC = 0.3 A, TJ = 25°C
100
3 5 7 9 11 13 15
hFE, FORCED GAIN
Figure 23. Inductive Cross Over Time, tc
2700
2200
1700
1200
700
200
0
IB1&2 = 100 mA
IB1&2 = 500 mA
IB1&2 = 50 mA
IBon = IBoff,
VCC = 15 V,
VZ = 300 V
LC = 200 mH
IB1&2 = 200 mA
0.5 1 1.5 2 2.5
IC, COLLECTOR CURRENT (AMPS)
Figure 24. Inductive Storage Time, tsi
3
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BUD43D2

Bipolar NPN Transistor

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