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NE677M04 데이터시트 PDF




CEL에서 제조한 전자 부품 NE677M04은 전자 산업 및 응용 분야에서
광범위하게 사용되는 반도체 소자입니다.


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부품번호 NE677M04 기능
기능 NECs MEDIUM POWER NPN SILICON HIGH FREQUENCY TRANSISTOR
제조업체 CEL
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NE677M04 데이터시트, 핀배열, 회로
www.DataSheet4U.com
NEC's MEDIUM POWER
NPN SILICON HIGH FREQUENCY NE677M04
TRANSISTOR
FEATURES
HIGH GAIN BANDWIDTH:
fT = 15 GHz
HIGH OUTPUT POWER:
P-1dB = 15 dBm at 1.8 GHz
• HIGH LINEAR GAIN:
GL = 15.5 dB at 1.8 GHz
NEW LOW PROFILE M04 PACKAGE:
SOT-343 footprint, with a height of only 0.59 mm
Flat lead style for better RF performance
DESCRIPTION
NEC's NE677M04 is fabricated using NEC's HFT3 wafer
process. With a transition frequency of 15 GHz, the NE677M04
is usable in applications from 100 MHz to 3 GHz. The NE677M04
provides P1dB of 15 dBm, even with low voltage and low
current, making this device an excellent choice for the driver
stage for mobile or fixed wireless applications.
2.05±0.1
1.25±0.1
+0.30+-00..0051(leads 1, 3 and ,4)
NEC's NE677M04 is housed in NEC's new low profile/flat lead
style "M04" package
ELECTRICAL CHARACTERISTICS (TA = 25°C)
PART NUMBER
PACKAGE OUTLINE
EIAJ3 REGISTRATION NUMBER
PIN CONNECTIONS
1. Emitter
2. Collector
3. Emitter
4. Base
NE677M04
M04
2SC5751
SYMBOLS
ICBO
IEBO
hFE
P1dB
GL
MAG
|S21E|2
ηc
NF
fT
Cre
PARAMETERS AND CONDITIONS
Collector Cutoff Current at VCB = 5V, IE = 0
Emitter Cutoff Current at VEB = 1 V, IC = 0
DC Current1 Gain at VCE = 3 V, IC = 20 mA
Output Power at 1 dB compression point at VCE = 2.8 V, ICQ = 8 mA,
f = 1.8 GHz, Pin = 1 dBm
Linear Gain at VCE = 2.8 V, ICQ = 8 mA, f = 1.8 GHz, Pin = -10 dBm
Maximum Available Gain4 at VCE = 3 V, IC = 20 mA, f = 2 GHz
Insertion Power Gain at VCE = 3 V, IC = 20 mA, f = 2 GHz
Collector Efficiency at VCE = 2.8 V, ICQ = 8 mA, f = 1.8 GHz,
Pin = 1 dBm
Noise Figure at VCE = 3 V, IC = 5 mA, f = 2 GHz, Zs =ZOPT
Gain Bandwidth at VCE = 3 V, IC = 20 mA, f = 2 GHz
Reverse Transfer Capacitance2 at VCB = 3 V, IC = 0, f = 1 MHz
UNITS
nA
nA
dBm
dB
dBm
dB
%
dB
GHz
pF
MIN
75
10.0
TYP
120
15.0
15.5
16.0
13.5
50
1.7
15
0.22
MAX
100
100
150
2.5
0.50
Notes:
1. Pulsed measurement, pulse width 350 µs, duty cycle 2 %.
2. Collector to Base capacitance measured by capacitance meter(automatic balance bridge method) when emitter pin is connected to the
guard pin of capacitance meter.
3. Electronic Industrail Association of Japan
4. MAG = |S21| (K ± K 2 - 1 ).
|S12|
California Eastern Laboratories




NE677M04 pdf, 반도체, 판매, 대치품
NE677M04
TYPICAL PERFORMANCE CURVES (TA = 25 °C)
OUTPUT POWER, POWER GAIN,
COLLECTOR CURRENT, COLLECTOR
EFFICIENCY vs. INPUT POWER
25
GP
20
VCE = 3.2 V
250
f = 0.9 GHz
Icq = 8 mA (RF OFF)
200
15 150
10
5
0
-20
100
Pout
ηc
50
-15 -10 -5
Ic
0
05
Input Power Pin (dBm)
OUTPUT POWER, POWER GAIN,
COLLECTOR CURRENT, COLLECTOR
EFFICIENCY vs. INPUT POWER
25 250
VCE = 3.2 V
f = 1.8 GHz
Icq = 8 mA (RF OFF)
20 200
GP
15
150
10
5
0
-15
Pout 100
ηc
50
Ic
0
-10 -5 0 5 10
Input Power Pin (dBm)
OUTPUT POWER, POWER GAIN,
COLLECTOR CURRENT, COLLECTOR
EFFICIENCY vs. INPUT POWER
25 250
VCE = 2.8 V
f = 1.8 GHz
Icq = 8 mA (RF OFF)
20 200
GP
15
150
10
5
0
-15
Pout 100
ηc
50
Ic
-10 -5
0
0
5 10
Input Power Pin (dBm)
OUTPUT POWER, POWER GAIN,
COLLECTOR CURRENT, COLLECTOR
EFFICIENCY vs. INPUT POWER
25 250
VCE = 3.2 V
f = 2.4 GHz
Icq = 8 mA (RF OFF)
20 200
15 GP
150
10
5
0
-15
100
Pout
ηc
50
Ic
0
-10 -5
0
5 10
Input Power Pin (dBm)

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NE677M04 전자부품, 판매, 대치품
TYPICAL SCATTERING PARAMETERS (TA = 25°C)
j25
j10
j50
j100
S22
0 10 25 50 100
S11
NE677M04
+135º
+180º
+90º
+45º
10 20 30 40
+0º
-j10
-135º
-45º
NE677M04
VC = 5 V, IC = 30 mA
FREQUENCY
S11
GHz
0.100
0.200
0.300
0.400
0.500
0.600
0.700
0.800
0.900
1.000
1.500
1.800
1.900
2.000
2.500
3.000
3.500
4.000
4.500
5.000
5.500
6.000
MAG
0.53
0.48
0.44
0.42
0.41
0.39
0.39
0.38
0.38
0.38
0.37
0.37
0.37
0.37
0.37
0.37
0.38
0.40
0.43
0.46
0.49
0.51
ANG
-41.03
-73.66
-97.50
-114.52
-127.00
-139.82
-147.57
-153.47
-159.31
-163.26
179.14
171.01
168.30
165.83
152.63
139.29
125.14
111.70
99.67
89.42
80.22
71.38
S21
MAG
40.66
32.81
26.31
21.49
18.03
15.28
13.34
11.83
10.62
9.64
6.55
5.50
5.22
4.96
3.99
3.33
2.85
2.49
2.19
1.95
1.74
1.56
ANG
151.83
132.70
119.35
109.81
102.57
96.73
91.78
87.64
83.69
80.25
64.91
56.83
54.20
51.65
39.13
27.15
15.43
4.05
-7.08
-17.99
-28.73
-39.19
S12
MAG
0.01
0.02
0.02
0.02
0.02
0.03
0.03
0.03
0.03
0.04
0.05
0.06
0.06
0.06
0.08
0.09
0.11
0.13
0.15
0.16
0.18
0.20
ANG
79.56
64.08
56.29
53.44
53.31
53.08
54.05
55.02
55.65
56.16
58.22
57.93
57.51
57.41
54.90
51.63
47.27
42.60
37.08
31.31
25.13
18.62
-90º
S22
MAG
0.89
0.75
0.63
0.56
0.50
0.43
0.41
0.40
0.39
0.38
0.37
0.38
0.39
0.39
0.43
0.46
0.50
0.54
0.58
0.61
0.65
0.68
ANG
-20.30
-33.75
-42.07
-47.07
-50.52
-50.09
-52.99
-54.21
-56.48
-58.27
-70.16
-77.47
-80.11
-82.71
-94.79
-106.02
-116.01
-125.90
-136.09
-147.22
-158.70
-170.08
K
0.21
0.39
0.53
0.66
0.75
0.90
0.98
1.02
1.06
1.09
1.18
1.19
1.20
1.20
1.17
1.12
1.05
0.99
0.91
0.84
0.78
0.73
MAG1
(dB)
36.62
33.32
31.43
30.03
28.75
27.65
26.75
24.98
23.55
22.49
18.69
17.16
16.71
16.30
14.62
13.43
12.75
12.91
11.79
10.78
9.86
8.98
Note:
1. Gain Calculations:
( ).MAG = |S21| K – K 2 - 1 When K 1, MAG is undefined and MSG values are used. MSG = |S21| , K = 1 + | | 2 - |S11| 2 - |S22| 2 , = S11 S22 - S21 S12
|S12|
|S12|
2 |S12 S21|
MAG = Maximum Available Gain
MSG = Maximum Stable Gain
Life Support Applications
These NEC products are not intended for use in life support devices, appliances, or systems where the malfunction of these products can reasonably
be expected to result in personal injury. The customers of CEL using or selling these products for use in such applications do so at their own risk and
agree to fully indemnify CEL for all damages resulting from such improper use or sale.
EXCLUSIVE NORTH AMERICAN AGENT FOR NEC RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS
CALIFORNIA EASTERN LABORATORIES • Headquarters • 4590 Patrick Henry Drive • Santa Clara, CA 95054-1817 • (408) 988-3500 • Telex 34-6393 • FAX (408) 988-0279
DATA SUBJECT TO CHANGE WITHOUT NOTICE
Internet: http://WWW.CEL.COM
11/22/2002

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NE677M04

NECs MEDIUM POWER NPN SILICON HIGH FREQUENCY TRANSISTOR

CEL
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