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6MBI75UB-120 데이터시트 PDF




Fuji Electric에서 제조한 전자 부품 6MBI75UB-120은 전자 산업 및 응용 분야에서
광범위하게 사용되는 반도체 소자입니다.


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부품번호 6MBI75UB-120 기능
기능 IGBT Module
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6MBI75UB-120 데이터시트, 핀배열, 회로
www.DataSheet4U.com
SPECIFICATION
Device Name :
Type Name :
Spec. No. :
IGBT Module
6MBI75UB-120
MS5F 5497
Jun. 18 ’03 Y.Kobayashi
Jun. 18 ’03 T.Miyasaka T.Fujihira
K.Yamada
Fuji Electric Co.,Ltd.
Matsumoto Factory
MS5F 5497
1
13
H04-004-07




6MBI75UB-120 pdf, 반도체, 판매, 대치품
3.Absolute Maximum Ratings ( at Tc= 25unless otherwise specified
Items
Symbols
Conditions
Maximum
Ratings
Collector-Emitter voltage
VCES
1200
Gate-Emitter voltage
VGES
±20
Ic Continuous Tc=25
Tc=80
100
75
Collector current
Icp 1ms
Tc=25
Tc=80
200
150
-Ic 75
-Ic pulse 1ms
150
Collector Power Dissipation
Pc 1 device
390
Junction temperature
Tj 150
Storage temperature
Tstg -40+125
Isolation between terminal and copper base *1
voltage between thermistor and others *2
Viso AC : 1min.
2500
Screw
Torque
Mounting *3
-
3.5
(*1) All terminals should be connected together when isolation test will be done.
(*2) Two termistor terminals should be connected together, each other terminals should be connected together
and shorted to base plate when isolation test will be done.
(*3) Recommendable Value : 2.5~3.5 Nm (M5)
Units
V
V
A
W
VAC
Nm
4. Electrical characteristics ( at Tj= 25unless otherwise specified)
Items
Symbols
Conditions
Zero gate voltage
Collector current
ICES
VGE = 0V
VCE = 1200V
Gate-Emitter
leakage current
IGES
VCE = 0V
VGE=±20V
Gate-Emitter
threshold voltage
VGE(th)
VCE = 20V
Ic = 75mA
Collector-Emitter
saturation voltage
VCE(sat)
(terminal)
VCE(sat)
(chip)
VGE=15V
Ic = 75A
Tj= 25
Tj=125
Tj= 25
Tj=125
Input capacitance
Cies VCE=10V,VGE=0V,f=1MHz
ton Vcc = 600V
Turn-on time
tr Ic = 75A
tr (i) VGE=±15V
Turn-off time
toff Rg = 9.1
tf
Forward on voltage
VF
(terminal)
VF
(chip)
VGE=0V
IF = 75A
Tj= 25
Tj=125
Tj= 25
Tj=125
Reverse recovery time
trr IF = 75A
Lead resistance, terminal-chip * R lead
Resistance
R
T = 25
T =100
B value
B T = 25/50
(*) Biggest internal terminal resistance among arm.
Characteristics
min. typ. max.
- - 1.0
Units
mA
- - 200 nA
4.5
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
465
3305
6.5
2.05
2.30
1.75
2.00
8
0.36
0.21
0.03
0.37
0.07
1.90
2.00
1.60
1.70
-
3.4
5000
495
3375
8.5
2.40
-
2.10
-
-
1.20
0.60
-
1.00
0.30
2.20
-
1.90
-
0.35
-
-
520
3450
V
V
nF
µs
V
µs
mΩ
K
MS5F 5497
4
13
H04-004-03

4페이지










6MBI75UB-120 전자부품, 판매, 대치품
Reliability Test Items
Test
cate-
gories
Test items
Test methods and conditions
1 High temperature
Reverse Bias Test temp.
Bias Voltage
Bias Method
Test duration
2 High temperature
Bias (for gate) Test temp.
Bias Voltage
Bias Method
3 Temperature
Humidity Bias
Test duration
Test temp.
Relative humidity
Bias Voltage
Bias Method
4 Intermitted
Operating Life
(Power cycle)
( for IGBT )
Test duration
ON time
OFF time
Test temp.
Number of cycles
: Ta = 125±5
(Tj 150 )
: VC = 0.8×VCES
: Applied DC voltage to C-E
VGE = 0V
: 1000hr.
: Ta = 125±5
(Tj 150 )
: VC = VGE = +20V or -20V
: Applied DC voltage to G-E
VCE = 0V
: 1000hr.
: 85±2 oC
: 85±5%
: VC = 0.8×VCES
: Applied DC voltage to C-E
VGE = 0V
: 1000hr.
: 2 sec.
: 18 sec.
: Tj=100±5 deg
Tj 150 , Ta=25±5
: 15000 cycles
Reference
norms
EIAJ ED-4701
(Aug.-2001 edition)
Number
of
sample
Accept-
ance
number
Test Method 101 5 ( 0 : 1 )
Test Method 101 5 ( 0 : 1 )
Test Method 102 5 ( 0 : 1 )
Condition code C
Test Method 106 5 ( 0 : 1 )
Failure Criteria
Item
Characteristic
Symbol
Failure criteria
Unit
Note
Lower limit Upper limit
Electrical
Leakage current
ICES - USL×2 mA
characteristic
±IGES
-
USL×2 µA
Gate threshold voltage VGE(th) LSL×0.8 USL×1.2 mA
Saturation voltage
VCE(sat)
-
USL×1.2 V
Forward voltage
VF - USL×1.2 V
Thermal IGBT
VGE
-
USL×1.2 mV
resistance
or VCE
FWD
VF
- USL×1.2 mV
Isolation voltage
Viso Broken insulation -
Visual
Visual inspection
inspection
Peeling
-
The visual sample
-
Plating
and the others
LSL : Lower specified limit.
USL : Upper specified limit.
Note : Each parameter measurement read-outs shall be made after stabilizing the components
at room ambient for 2 hours minimum, 24 hours maximum after removal from the tests.
And in case of the wetting tests, for example, moisture resistance tests, each component
shall be made wipe or dry completely before the measurement.
MS5F 5497
7
13
H04-004-03

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부품번호상세설명 및 기능제조사
6MBI75UB-120

IGBT Module

Fuji Electric
Fuji Electric

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