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Datasheet PJD882S Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | PJD882S | NPN Epitaxial Silicon Transistor
PJD882/PJD882S NPN Epitaxial Silicon Transistor
AUDIO FREQ UENCY POWER AMPLIFIER LOW SPEED SWITCHING • • • Complement to PJB772 PW 10ms,Duty Cycle50%Pulse Test PW 350µ s, Duty Cycle 2%
TO-92
TO-126
ABSOLUTE MAXIMUM RATINGS (T a = 25 ℃)
Characteristic Collect |  ETC | transistor |
PJD Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | PJD06N03 | N-Channel Enhancement Mode MOSFET
PJD06N03
25V N-Channel Enhancement Mode MOSFET
TO-252
FEATURES
• RDS(ON), VGS@10V,IDS@30A=6mΩ • RDS(ON), [email protected],IDS@30A=9mΩ • Advanced trench process technology • High Density Cell Design For Uitra Low On-Resistance • Specially Designed for DC/DC Converters and  Pan Jit International mosfet | | |
| 2 | PJD09N03 | N-Channel Enhancement Mode MOSFET
PJD09N03
25V N-Channel Enhancement Mode MOSFET
TO-252
FEATURES
• RDS(ON), VGS@10V,IDS@30A=9mΩ • RDS(ON), [email protected],IDS@30A=12mΩ • Advanced trench process technology • High Density Cell Design For Uitra Low On-Resistance • Specially Designed for DC/DC Converters and Pan Jit International mosfet | | |
| 3 | PJD10P10A | 100V P-Channel Enhancement Mode MOSFET PPJD10P10A
100V P-Channel Enhancement Mode MOSFET
Voltage -100 V Current
-10 A
Features
RDS(ON), VGS@-10V,ID@-5A<210mΩ RDS(ON), [email protected],ID@-3A<230mΩ High switching speed Improved dv/dt capability Low Gate Charge Low reverse transfer capacitance Lead free in compli Pan Jit International mosfet | | |
| 4 | PJD14P06-AU | 60V P-Channel Enhancement Mode MOSFET PPJD14P06-AU
60V P-Channel Enhancement Mode MOSFET
Voltage
-60 V Current
-14 A
Features
RDS(ON), VGS@-10V,ID@-7A<115mΩ RDS(ON), [email protected],[email protected]<160mΩ High switching speed Improved dv/dt capability Low Gate Charge Low reverse transfer capacitance Acqire quality s Pan Jit International mosfet | | |
| 5 | PJD14P06A | 60V P-Channel Enhancement Mode MOSFET PPJU14P06A / PJD14P06A
60V P-Channel Enhancement Mode MOSFET
Voltage
-60 V Current
-14 A
Features
RDS(ON), VGS@-10V,ID@-6A<110mΩ RDS(ON), [email protected],ID@-3A<130mΩ High switching speed Improved dv/dt capability Low Gate Charge Low reverse transfer capacitance Lead fr Pan Jit International mosfet | | |
| 6 | PJD14P10A | 100V P-Channel Enhancement Mode MOSFET PPJD14P10A
100V P-Channel Enhancement Mode MOSFET
Voltage -100 V Current
-14 A
Features
RDS(ON), VGS@-10V,ID@-7A<140mΩ RDS(ON), [email protected],ID@-3A<170mΩ High switching speed Improved dv/dt capability Low Gate Charge Low reverse transfer capacitance Lead free in compli Pan Jit International mosfet | | |
| 7 | PJD15N06L | N-Channel Enhancement Mode MOSFET
PJD15N06L
60V N-Channel Enhancement Mode MOSFET
TO-252
FEATURES
• RDS(ON), VGS@10V,IDS@10A=40mΩ • RDS(ON), [email protected],[email protected]=50mΩ • Advanced Trench Process Technology • High Density Cell Design For Ultra Low On-Resistance • Specially Designed for DC/DC Converters Pan Jit International mosfet | |
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