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부품번호 NX25F041B 기능
기능 (NX25F011B - NX25F041B) SERIAL FLASH MEMORIES
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NX25F041B 데이터시트, 핀배열, 회로
www.DataSheet4U.com
PRELIMINARY
DECEMBER 2001
NX25F011B, NX25F021B, NX25F041B
1M-BIT, 2M-BIT, AND 4M-BIT
SERIAL FLASH MEMORIES WITH 4-PIN SPI INTERFACE
This document contains PRELIMINARY INFORMATION. NexFlash reserves the right to make changes to its product at any time without notice in order to improve design and supply the best possible
product. We assume no responsibility for any errors which may appear in this publication. Copyright 2001, NexFlash Technologies, Inc.
NexFlash Technologies, Inc.
PRELIMINARY NXSF016F-1201
12/12/01 ©
1




NX25F041B pdf, 반도체, 판매, 대치품
NX25F011B
NX25F021B
NX25F041B
FEATURES
• Flash Storage for Resource-Limited Systems
– Ideal for portable/mobile and microcontroller-based
applications that store voice, text, and data
• 0.35µ NexFlashMemory Technology
– 1M/2M/4M-bit with 512/1024/2048 sectors
– Small 264-byte sectors
– Erase/Write time of 7.5 ms/sector (typical)
– Optional 8KB (32 sector) block erase for faster
programming
• Ultra-low Power for Battery-Operation
– Single 5V or 3V supply for read and erase/write
– 1 mA standby current, 2.5 mA active @ 3V (typical)
– Low frequency read command for lower power
• 4-pin SPI Serial Interface
– Easily interfaces to popular microcontrollers
– Clock operation as fast as 20 MHz
• On-chip Serial SRAM
– Single 264-byte Read/Write SRAM buffer
– Use in conjunction with or independent of Flash
– Off-loads RAM-limited microcontrollers
• Special Features for Media-Storage Applications
– Byte-level addressing for reads and SRAM writes
– Transfer or compare sector to SRAM
– Versatile hardware and software write-protection
– In-system electronic part number option
– Removable Serial Flash Module package option
– Serial Flash Development Kit
DESCRIPTION
The NX25F011B, NX25F021B, and NX25F041B Serial
Flash memories provide a storage solution for systems
limited in power, pins, space, hardware, and firmware
resources. They are ideal for applications that store voice,
text, and data in a portable or mobile environment. Using
NexFlash's patented single transistor EEPROM cell, the
devices offer a high-density, low-voltage, low-power, and
cost-effective non-volatile memory solution. The devices
operate on a single 5V or 3V (2.7V-3.6V) supply for Read
and Erase/Write with typical current consumption as low as
2.5 mA active and less than 1 µA standby. Sector
erase/write speeds as fast as 7.5 ms increase system
performance, minimize power-on time, and maximize
battery life.
The NX25F011B, NX25F021B, and NX25F041B provide
1M-bit, 2M-bit, and 4M-bit of flash memory organized as 512,
1024, or 2048 sectors of 264 bytes each. Each sector is
individually addressable through basic serial-clocked com-
mands. The 4-pin SPI serial interface works directly with
popular microcontrollers. Special features include: on-chip
serial SRAM, byte-level addressing, double-buffered sector
writes, transfer/compare sector to SRAM, hardware and
software write protection, alternate oscillator frequency, elec-
tronic part number, and removable Serial Flash Module
package option. Development is supported with the
PC-based SFK-SPI Serial Flash Development Kit.
4 NexFlash Technologies, Inc.
PRELIMINARY NXSF016F-1201
12/12/01 ©

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NX25F041B 전자부품, 판매, 대치품
NX25F011B
NX25F021B
NX25F041B
Serial Flash Memory Array
The NX25F011B, NX25F021B, and NX25F041B Serial
Flash memory arrays are organized as 512, 1024, and 2048
sectors of 264-bytes (2,112 bits) each, as shown in
Figure 4. The block size of the device is 32 sectors, yielding
16, 32 and 64 blocks for the NX25F011B, NX25F021B, and
NX25F041B.
The Serial Flash memory of the NX25F011B, NX25F021B,
and NX25F041B is byte-addressable for read operations.
This allows a single byte, or specified sequence of bytes,
to be read without having to clock an entire 264-byte sector
out of the device. Data can be read directly from a sector
in the Flash memory array by using a Read from Sector
command.
Data can be written to the Flash memory array one sector
(264-bytes) at a time through the Serial SRAM using a Write
to Sector command or a Transfer SRAM to Sector com-
1mand. No pre-erase is needed. Instead, the device
incorporates an auto-erase-before-write feature that
automatically erases the addressed sector at the beginning
of the write operation. After a sector has been written, the
memory array will become busy while it is programming the
2specified non-volatile memory cells of that sector. This
busy time will not exceed tWP during which time the Flash
array is unavailable for read or write access. The device
can be tested to determine the arrays availability using
3the Ready/Busy status that is available during most read
commands, through the status register, or on the
Ready/Busy pin.
4After sector programming is complete and the device is
ready, it is recommended to verify the data in the sector
with the data in the SRAM using the compare command,
(see Write/ Verify Flow towards the end of this data sheet).
5
25F011
S[8:0]
Sector Address:
25F021
S[9:0]
25F041
S[10:0]
Block 16
Sector 511
1FFH
Block 32
Sector 1023
3FFH
Block 64
Sector 2047
7FFH
Sector 480
1E0H
Sector 992
3E0H
Sector 2016
7E0H
Block 0
Sector 31
1FH
Block 0
Sector 31
1FH
Sector 0
000H
Sector 0
000H
Block 0
Sector 31
1FH
Sector 0
000H
Byte 0
000H
Byte Address: B[8:0]
Byte1
001H
Byte 2-261
002H-105H
Byte 262 Byte 263
106H
107H
Byte 0
000H
Byte1
001H
Byte 2-261
002H-105H
Byte 262 Byte 263
106H
107H
1M-bit, 2M-bit, or 4M-bit Serial Flash Memory Array
512, 1024, and 2048 Byte-Addressable Sectors
of 264-Bytes each.
Organized in 16, 32 and 64
blocks of 32 sectors per block.
Byte 0
000H
Byte 1
001H
Byte 2-261
002H-105H
Byte 262 Byte 263
106H
107H
Byte 0
000H
Byte 1
001H
Byte 2-261
002H-105H
Byte 262 Byte 263
106H
107H
Figure 4. NX25F011B, NX25F021B, and NX25F041B Serial Flash Memory Array
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NexFlash Technologies, Inc.
PRELIMINARY NXSF016F-1201
12/12/01 ©
7

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(NX25F011B - NX25F041B) SERIAL FLASH MEMORIES

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