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부품번호 | IRL3502SPBF 기능 |
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기능 | HEXFET Power MOSFET | ||
제조업체 | International Rectifier | ||
로고 | |||
전체 8 페이지수
www.DataSheet4U.com
l Advanced Process Technology
l Surface Mount
l Optimized for 4.5V-7.0V Gate Drive
l Ideal for CPU Core DC-DC Converters
l Fast Switching
l Lead-Free
Description
These HEXFET Power MOSFETs were designed
specifically to meet the demands of CPU core DC-DC
converters in the PC environment. Advanced
processing techniques combined with an optimized
gate oxide design results in a die sized specifically to
offer maximum efficiency at minimum cost.
G
The D2Pak is a surface mount power package capable
of accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible on-
resistance in any existing surface mount package. The
D2Pak is suitable for high current applications because
of its low internal connection resistance and can
dissipate up to 2.0W in a typical surface mount
application.
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
VGSM
EAS
IAR
EAR
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 4.5V
Continuous Drain Current, VGS @ 4.5V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Gate-to-Source Voltage
(Start Up Transient, tp = 100µs)
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Thermal Resistance
RθJC
RθJA
Parameter
Junction-to-Case
Junction-to-Ambient ( PCB Mounted,steady-state)**
PD - 95126
IRL3502SPbF
HEXFET® Power MOSFET
D
VDSS = 20V
RDS(on) = 0.007Ω
S ID = 110A
D 2 Pak
Max.
110
67
420
140
1.1
± 10
14
390
64
14
5.0
-55 to + 150
300 (1.6mm from case )
Typ.
Max.
0.89
40
Units
A
W
W/°C
V
V
mJ
A
mJ
V/ns
°C
Units
°C/W
3/18/04
IRL3502SPbF
8000
6000
VCCGirsssSs
=
=
=
0V,
CCggsd
+
f = 1MHz
Cgd , Cds
SHORTED
Coss = Cds + Cgd
Ciss
4000
Coss
2000
Crss
0
1 10 100
VDS , Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
15 ID = 64A
12
VDS = 16V
9
6
3
0
0 40 80 120 160
QG , Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
1000
OPERATION IN THIS AREA LIMITED
BY RDS(on)
10us
TJ = 150° C
100
TJ = 25° C
10
0.5
VGS = 0 V
1.0 1.5 2.0
VSD ,Source-to-Drain Voltage (V)
2.5
Fig 7. Typical Source-Drain Diode
Forward Voltage
100us
100
1ms
TTJC
=
=
25 ° C
150 ° C
Single Pulse
10
1
10ms
10
VDS , Drain-to-Source Voltage (V)
100
Fig 8. Maximum Safe Operating Area
4페이지 D2Pak Package Outline
Dimensions are shown in millimeters (inches)
IRL3502SPbF
D2Pak Part Marking Information (Lead-Free)
T H IS IS AN IR F 5 30 S W IT H
L OT CODE 8024
AS S E MB LE D ON WW 02, 2000
IN T H E AS S E M B L Y L IN E "L "
IN T E R N AT IONAL
R E CT IF IE R
L OGO
N ote: "P " in as s em bly line
po s itio n in dicates "L ead-F ree"
AS S E MB L Y
L OT CODE
OR
F 530S
IN T E R N AT IO N AL
R E CT IF IE R
L OGO
AS S E MB L Y
L OT CODE
F 530S
P AR T NU MB E R
D AT E CO DE
P = DE S IGN AT E S L E AD-F R E E
P R OD U CT (OP T IO N AL )
YE AR 0 = 2000
WE E K 02
A = AS S E MB L Y S IT E CODE
P AR T N U MB E R
DAT E CODE
YE AR 0 = 2000
WE E K 02
L INE L
7페이지 | |||
구 성 | 총 8 페이지수 | ||
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부품번호 | 상세설명 및 기능 | 제조사 |
IRL3502SPBF | HEXFET Power MOSFET | International Rectifier |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |